2N5551L-x-T92-B [BWTECH]
HIGH VOLTAGE SWITCHING TRANSISTOR;
| 型号： | 2N5551L-x-T92-B |
| 厂家： | 
Bruckewell Technology LTD |
| 描述： | HIGH VOLTAGE SWITCHING TRANSISTOR 高压 开关 |
| 文件： | 总3页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5551
NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
1
FEATURES
SOT-89
* High collector-emitter voltage:
CEO=160V
* High current gain
V
APPLICATIONS
1
TO-92
* Telephone switching circuit
* Amplifier
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
2N5551L-x-AB3-R
2N5551L-x-T92-B
2N5551L-x-251-K
Halogen Free
2N5551G-x-AB3-R
2N5551G-x-T92-B
2N5551G-x-251
1
B
E
E
2
C
B
3
E
C
2N5551-x-AB3-R
2N5551-x-T92-B
2N5551-x-251-K
SOT-89
TO-92
Tape Reel
Tape Box
C Tube
TO-251
B
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
180
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Collector Dissipation
Collector Current
VCEO
160
V
VEBO
6
V
TO-92
625
mW
mW
mA
℃
PC
SOT-89
500
IC
TJ
600
Junction Temperature
Storage Temperature
+150
-55 ~ +150
TSTG
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0
SYMBOL
TEST CONDITIONS
MIN
180
160
6
TYP
MAX
UNIT
V
BVCBO IC=100μA, IE=0
V
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
BVEBO IE=10μA, IC=0
V
ICBO
IEBO
hFE1
hFE2
hFE3
VCB=120V, IE=0
VBE=4V,IC=0
50
50
nA
nA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
80
80
80
DC Current Gain(Note)
160
400
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.15
0.2
1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
V
V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VBE(SAT)
1
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0 f=1MHz
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
100
300
6.0
MHz
pF
Cob
Noise Figure
NF
8
dB
Note: Pulse test: PW<300μs, Duty cycle<2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400
2N5551
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Output Capacitance
DC Current Gain
VCE=5V
103
102
10
8
f=1MHz
IE=0
6
4
2
101
100
0
101
102
10-1
100
101
102
103
100
Collector-Base Voltage (V)
Collector Current, IC (mA)
Current Gain-Bandwidth Product
VCE=10V
103
102
101
100
100
101
102
103
Collector Current, IC (mA)
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