PACDN010 [CALMIRCO]
P/ACTIVE SCHOTTKY DIODE MEMORY BUS TERMINATOR; P / ACTIVE肖特基二极管存储器总线端接
| 型号： | PACDN010 |
| 厂家： | 
CALIFORNIA MICRO DEVICES CORP |
| 描述： | P/ACTIVE SCHOTTKY DIODE MEMORY BUS TERMINATOR |
| 文件： | 总4页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CALIFORNIA MICRO DEVICES
PACDN010
P/ACTIVE SCHOTTKY DIODE MEMORY BUS TERMINATOR
Applications
Features
Provides proper bus termination independent of
card loading conditions
SDRAM Memory Bus Termination
PCI v2.1 Bus Termination for Intel-based Pentium®
and Pentium Pro systems
Schottky diode technology; fast turn on
and reverse recovery characteristics
36 integrated diodes in a single package
offers 18 channel, dual rail clamping action
24-pin QSOP package saves board space and
eases layout in space critical bus termination
applications
Refer to AP-201 Termination Application Note for
further information.
Available in 24 pin TSSOP package for component
height constrained modules
Product Description
Reflections on high speed Memory Buses lead to undershoot and overshoot disturbances which may result in improper
system operation. Resistor terminations, when used to terminate high speed memory or data lines, increase power
consumption and degrade output (high) levels resulting in reduced noise immunity. Schottky diode termination is the best
overall solution for applications in which power consumption and noise immunity are critical considerations.
CAMDs P/Active DN010 Schottky Diode Memory Bus Terminator is specifically designed to minimize undershoot/
overshoot disturbances caused by reflection noise on SDRAM bus lines as well as v2.1 66MHz PCI buses.
This highly integrated Schottky diode network provides very effective termination performance for high speed Memory Bus
lines under variable loading conditions. The packaged device supports up to 18 terminated lines each of which can be
simultaneously clamped to both ground and power supply rail.
SCHEMATIC CONFIGURATION
VDD
19
VDD
24
GND
23
22
21
20
18
17
16
15
14 13
1
2
3
4
5
6
7
8
9
10
11 12
VDD
GND
GND
P/Active is a trademark of California Micro Devices Corp.
Pentium Pro is a registered trademark of Intel.
Covered by one or more of U.S. Pat. Nos. 5,355,014, 5,370,766, and 5,514,612 and other pending applications.
C0120497D
© 2000 California Micro Devices Corp. All rights reserved.
4/00
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
1
CALIFORNIA MICRO DEVICES
PACDN010
S TA N D A R D S P E C IF IC A TIO N
Ab so lu t e Ma xim u m Ra t in g s
Pa ra m e t e r
Sym b o l
Ra t in g
Supply Voltage
VDD
-0.3V to 7V
± 50mA
Channel clamp current (continuous)
Operating Temperature
I
clamp
0°C to 70°C
Storage Temperature
Package Power Rating
Tstg
-60°C to 150°C
1.00W, max.
QSOP @ 70°C
QSOP @ 70°C
1.00W, max.
The absolute maximum ratings are limiting values, to be applied individually, beyond which the device may be permanently damaged. Functional
operation under any of these conditions is not guaranteed. Exposing the device to its absolute maximum rating may
affect its reliability.
D IO D E C H A R A C TE R IS TIC S ( T
A
= 0 °C TO 7 0 °C )
Param eter
Diode forward Voltage
Condition
IF = 16mA
Min
Typ
0.65V
Max
0.85V
IF = 50mA
0.80V
125MHz
0.1µA
5pF
1.0V
Max. Bus Speed (See Note 1)
Channel leakage
Z = 50Ω, Logic Swing 0.4V to 3.0V
0
0 ≤ VIN ≤ VDD
f = 1MHz, VIN = 2.5V, TA = 25°C, VDD = 5.0V
MIL-STD-8 8 3 , Me t h o d 3 0 1 5
5µA
Input Capacitance
ESD Protection
2KV
S TA N D A R D P A R T O R D E R IN G IN F O R M A TIO N
Package
Ordering Part Num ber
Pins
2 4
2 4
Style
QSOP
TSSOP
Tubes
PACDN0 1 0 Q/T
PACDN0 1 0 T/T
Tape & Reel
PACDN0 1 0 Q/R
PACDN0 1 0 T/R
Part Marking
PACDN0 1 0 Q
PACDN0 1 0 T
Note 1:
The presence of a Schottky diode for clamping bus overshoots will cause additional delays of signal edges. These delays are the result of diode
characteristics such as forward voltage, diode capacitance and the reverse recovery phenomenon. The ground clamp diode is most critical,
particularly if VLSI circuits such as static or dynamic memories are directly connected to busses without any buffer stages. The incremental delay
observed on a positive edge following a negative transition that forward biased the Schottky diode is less than 800 pS. That represents less than
10% of the 125 MHz (8 nS period) bus cycle time.
© 2000 California Micro Devices Corp. All rights reserved.
4/00
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
2
CALIFORNIA MICRO DEVICES
PACDN010
QSOP - TOP VIEW
Power Derating Curve
N
CAMD
E H
1
M E C H A N IC A L S P E C IF IC A TIO N S
D
Lead Plating
Tin-Lead
Lead Material
Copper Alloy
0.004"(0.102mm)
Silicon
Lead Coplanarity
Substrate Material
Body Material
Flammabiltiy
Molded Epoxy
UL94V-0
e
B
A
C
A1
L
P a c k a g e D im e n s io n s , P o w e r D is s ip a t io n & In fo r m a t io n
Pa cka g e
Pin s
QSOP
24
JEDEC
MO137
m m
in ch e s
m in
1.35
0.10
0.20
0.18
8.56
3.81
m a x
1.75
0.25
0.30
0.25
8.73
3.98
m in
m a x
0.069
0.010
0.012
0.010
0.344
0.157
0.053
0.004
0.008
0.007
0.337
0.150
A
A1
B
C
D
E
0.64 BSC
0.025 BSC
e
5.79
0.40
6.19
1.27
0.228
0.016
0.244
0.050
H
L
PD @ 70°C
# / t u b e
# / t a p e & re e l
1.00W
58 p cs
2,500 p cs
© 2000 California Micro Devices Corp. All rights reserved.
4/00
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
3
CALIFORNIA MICRO DEVICES
PACDN010
TSSOP - TOP VIEW
Power Derating Curve
H
CAMD
E H
1
M E C H A N IC A L S P E C IF IC A TIO N S
Lead Plating
Tin-Lead
D
Lead Material
Copper Alloy
0.004"(0.102mm)
Silicon
Lead Coplanarity
Substrate Material
Body Material
Flammabiltiy
Molded Epoxy
UL94V-0
e
B
A
C
A1
L
P a c k a g e D im e n s io n s , P o w e r D is s ip a t io n & In fo r m a t io n
Pa cka g e
Pin s
TSSOP
24
JEDEC
MO153
m m
in ch e s
m in
-
m a x
1.10
0.15
0.30
0.20
7.90
4.50
m in
-
m a x
0.433
0.006
0.0118
0.0079
0.311
0.177
A
A1
B
C
D
E
0.05
0.19
0.09
7.70
4.30
0.002
0.0075
0.0035
0.303
0.169
0.65 BSC
0.0256 BSC
0.256
0.028
e
H
L
6.25
0.50
6.50
0.70
0.246
0.020
PD @ 70°C
# / t u b e
# / t a p e & re e l
1.00W
62 p cs
2,500 p cs
© 2000 California Micro Devices Corp. All rights reserved.
4/00
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
4
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