J308TA [CALOGIC]

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92,;


型号：	J308TA
厂家：	CALOGIC, LLC
描述：	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, 晶体放大器小信号场效应晶体管射频小信号场效应晶体管
文件：	总2页 (文件大小：30K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

N-Channel JFET

High Frequency Amplifier

CORPORATION

J308 – J310 / SST308 – SST310

FEATURES

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise specified)

Industry Standard Part in Low Cost Plastic Package

High Power Gain

Low Noise

Dynamic Range Greater Than 100dB

•

Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V

Continuous Forward Gate Current . . . . . . . . . . . . . . . . -10mA

Storage Temperature Range . . . . . . . . . . . . . -55^oC to +150^oC

Operating Temperature Range . . . . . . . . . . . -55^oC to +135^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW

Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . 3.27mW/^oC

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

•

Easily Matched to 75Ω Input

•

APPLICATIONS

VHF/UHF Amplifiers

Oscillators

Mixers

•

PIN CONFIGURATION

SOT-23

ORDERING INFORMATION

TO-92

Part

Package

Temperature Range

J308-310

SST308-310 Plastic SOT-23

Plastic TO-92

-55^oC to +135^oC

For Sorted Chips in Carriers see U308 series.

PRODUCT MARKING (SOT-23)

SST308

SST309

SST310

Z08

Z09

Z10

5021

J308 – J310 / SST308 – SST310

CORPORATION

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

308

309

310

SYMBOL

BV_GSS

I_GSS

PARAMETER

UNITS

TEST CONDITIONS

MIN

TYP MAX MIN

TYP

MAX

Gate-Source Breakdown

Voltage

-25

I_G= -1µA, V_DS= 0

-1.0

_GS= -15V,

Gate Reverse Current

µA

V_DS= 0

T_A= 125^o

Gate-Source

V_GS(off)

I_DSS

V_GS(f)

g_fs

-1.0

-6.5

-1.0

-4.0

-2.0

-6.5

VDS = 10V, I_D= 1nA

_DS= 10V, V_GS= 0

V_DS= 0, I_G= 1mA

Cutoff Voltage

Saturation Drain Current

(Note 1)

Gate-Source

Forward Voltage

1.0

Common-Source Forward

Transconductance

8,000 17,000

10,000 17,000

8,000 17,000

Common-Source Output

Conductance

g_os

250

V_DS= 10V

_D= 10mA

(Note 2)

µS

f = 1kHz

Common-Gate Forward

Transconductance

g_fg

13,000

150

13,000

150

12,000

150

Common Gate Output

Conductance

g_og

ELECTRICAL CHARACTERISTICS (Continued) (T_A= 25^oC unless otherwise specified)

308

309

310

SYMBOL

PARAMETER

UNITS

TEST CONDITIONS

MIN TYP MAX MIN TYP MAX MIN TYP MAX

C_gd

Gate-Drain Capacitance

Gate-Source Capacitance

1.8 2.5

4.3 5.0

1.8 2.5

4.3 5.0

1.8 2.5

4.3 5.0

_DS= 10V,

_GS= -10

f = 1MHz

(Note 2)

C_gs

e_n

Equivalent Short-Circuit

Input Noise Voltage

V_DS= 10V,

f = 100Hz

(Note 2)

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I_D= 10mA

Common-Source Forward

Transconductance

Re_(Vfs)

Re_(Vfg)

Re_(Vis)

Re_(Vos)

Common-Gate Input

Conductance

µS

Common-Source Input

Conductance

0.4

0.15

0.4

0.15

0.4

0.15

f = 105MHz

_DS= 10V,

_D= 10mA

(Note 2)

Common-Source Output

Conductance

Common-Gate Power Gain

at Noise Match

G_pg

1.5

Noise Figure

Common-Gate Power Gain

at Noise Match

G_pg

f = 450MHz

Noise Figure

2.7

NOTES: 1. Pulse test PW 300µs, duty cycle ≤3%.

2. For design reference only, not 100% tested.

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