PN4392 [CALOGIC]
N-Channel JFET Switch; N沟道JFET开关
| 型号： | PN4392 |
| 厂家： | 
CALOGIC, LLC |
| 描述： | N-Channel JFET Switch |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-Channel JFET Switch
CORPORATION
2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393
FEATURES
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
rds(on)<300 Ohms (2N4391)
ID(OFF)<100pA
Switches ±10VAC With ±15V Supplies (4392, 4393)
•
•
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +200oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
•
PIN CONFIGURATION
TO-18
TO-92
SOT-23
Power Dissipation
1.8W
360mW
350mW
Derate above 25oC 10mW/oC 3.3mW/oC 2.8mW/oC
Plastic
Storage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +150oC
TO-92
Operating . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +135oC
TO-18
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
G,C
G
S
S
D
D
ORDERING INFORMATION
Part
Package
Temperature Range
-55oC to +200oC
-55oC to +135oC
-55oC to +135oC
SOT-23
5001
2N4391/93
PN4391/93
Hermetic TO-18
Plastic TO-92
G
SST4391/93 Plastic SOT-23
X2N4391/93 Sorted Chips in Carriers -55oC to +200oC
D
S
PRODUCT MARKING (SOT-23)
SST4391
SST4392
SST4393
N01
N02
N03
2N4391 – 2N4393 / PN4391 – PN4393
SST4391 – SST4393
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
4391
4392
4393
SYMBOL
PARAMETER
UNITS
TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
-100
-200
-100
-200
-100
-200
pA
nA
V
IGSS
Gate Reverse Current
VGS = -20V, VDS = 0
T
A = 150oC
-40
-40
-40
BVGSS
Gate-Source Breakdown Voltage
IG = -1µA, VDS = 0
VGS = -5V (4393)
VGS = -7V (4392)
GS = -12V (4391)
100
200
100
200
100
200
pA
nA
ID(off
)
Drain Cutoff Current
VDS = 20V
V
TA = 150oC
1
1
1
VGS(f)
VGS(off)
IDSS
Gate-Source Forward Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current (Note 1)
IG = 1mA, VDS = 0
VDS = 20V, ID = 1nA
VDS = 20V, VGS = 0
V
-4
-10
-2
-5
75
-0.5
5
-3
30
50 150 25
mA
V
ID = 3mA (4393)
0.4
0.4
0.4
VDS(on)
Drain-Source ON Voltage
VGS = 0
I
I
D = 6mA (4392)
D = 12mA (4391)
Static Drain-Source ON
Resistance
30
30
14
60
60
14
100
100
14
rDS(on)
rds(on)
Ciss
V
GS = 0, ID = 1mA
Ω
Drain-Source ON Resistance
VGS = 0, ID = 0
f = 1kHz
f = 1MHz
Common-Source Input
Capacitance (Note 2)
VDS = 20V, VGS = 0
3.5
V
GS = -5V
GS = -7V
pF
Common-Source Reverse
Transfer Capacitance (Note 2)
Crss
VDS = 0
3.5
V
3.5
15
5
VGS = -12V
VDD = 10V, VGS(on) = 0
15
5
15
5
td
tr
Turn-ON Delay Time (Note 2)
Rise Time (Note 2)
ID(on)
12mA
6
3
VGS(off)
-12V
-7
ns
4391
4392
4393
20
15
35
20
50
30
toff
tf
Turn-OFF Delay Time (Note 2)
Fall Time (Note 2)
-5
NOTES: 1. Pulse test required, pulse width = 300µs, duty cycle ≤3%.
2. For design reference only, not 100% tested.
SWITCHING TIMES TEST CIRCUIT
RL
51Ω
VDD
D
PULSE
IN
1 kΩ
1000pF
VIN
Ω
51
SCOPE
VOUT
51Ω
9.6
RL
=
- 51Ω
ID(ON)
0010
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