SD210E [CALOGIC]

High-Speed Analog N-Channel DMOS FETs; 高速模拟N通道DMOS场效应管
SD210E
型号: SD210E
厂家: CALOGIC, LLC    CALOGIC, LLC
描述:

High-Speed Analog N-Channel DMOS FETs
高速模拟N通道DMOS场效应管

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中文:  中文翻译
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High-Speed Analog  
N-Channel DMOS FETs  
CORPORATION  
SD210 / SD212 / SD214  
FEATURES  
DESCRIPTION  
High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB  
Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm  
Low Feedthrough and Feedback Transients  
Low Capacitance:  
Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.  
Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.  
Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.  
No protection Diode from Gate to Substrate for Very  
High Impedance Applications  
The Calogic SD210 is a 30V analog switch driver without a  
built-in protection diode from gate to substrate for use with  
SD212 and SD214 DMOS analog switches.  
ORDERING INFORMATION  
Part  
Package  
Temperature Range  
SD210E  
XSS210  
Hermetic TO-72 Package  
Sorted Chips in Carriers  
-55oC to +125oC  
-55oC to +125oC  
-55oC to +125oC  
-55oC to +125oC  
-55oC to +125oC  
-55oC to +125oC  
Maximum Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . ±40V  
SD212DE Hermetic TO-72 Package  
XSD212 Sorted Chips in Carriers  
SD214DE Hermetic TO-72 Package  
XSD214 Sorted Chips in Carriers  
APPLICATIONS  
SD210:  
Analog Switch Driver  
SD212 and SD214:  
Analog Switches  
High-Speed Digital Switches  
Multiplexers  
A to D Converters  
D to A Converters  
Choppers  
Sample & Hold  
SCHEMATIC DIAGRAM (Top View)  
BODY AND  
CASE  
SOURCE  
1
2
4
3
TO-72  
GATE  
DRAIN  
C
G
S
D
BODY IS INTERNALLY CONNECTED  
TO THE CASE  
1Q-23  
CD1-2  
CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025  
SD210 / SD212 / SD214  
CORPORATION  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SD210 SD212 SD214 UNIT  
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA  
Total Device Dissipation at 25oC Case Temperature . . . 1.2W  
Storage Temperatue Range . . . . . . . . . . . . . -65oC to +200oC  
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300oC  
Operating Temperature Range . . . . . . . . . . . -55oC to +125oC  
VDS  
VSD  
VDB  
VSB  
VGS  
VGB  
VGD  
Drain-to-Source +30  
Source-to-Drain +10  
+10  
+10  
+15  
+15  
±40  
±40  
±40  
+20  
+20  
+25  
+25  
±40  
±40  
±40  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Drain-to-Body  
Source-to-Body  
Gate-to-Source  
Gate-to-Body  
Gate-to-Drain  
+30  
+15  
±40  
±40  
±40  
DC CHARACTERISTICS (TA = 25oC, unless otherwise specified)  
SD210  
SD212  
SD214  
SYMBOL  
PARAMETER  
UNITS  
TEST CONDITIONS  
MIN TYP MAX MIN TYP MAX MIN TYP MAX  
BREAKDOWN VOLTAGE  
V
GS = VBS = 0V, ID = 10µA  
30  
10  
10  
15  
15  
35  
25  
BVDS  
Drain-to-Source  
10  
10  
15  
15  
25  
20  
20  
25  
25  
25  
VGS = VBS = -5V, IS = 10nA  
V
BVSD  
BVDB  
BVSB  
Source-to Drain  
Drain-to-Body  
Source-to-Body  
VGD = VBD = -5V, ID = 10nA  
VGB = 0V, source OPEN, ID = 10nA  
VGB = 0V, drain OPEN, IS = 10µA  
LEAKAGE CURRENT  
1
1
10  
10  
1
1
10  
10  
V
GS = VBS = -5V, VDS = +10V  
VGS = VBS = -5V, VDS = +20V  
GS = VBD = -5V, VSD = +10V  
IDS (OFF)  
ISD (OFF)  
Drain-to-Source  
1
1
10  
nA  
V
Source-to-Drain  
VGS = VBD = -5V, VSD = +20V  
VDB = VSB = 0V, VGS = ±40V  
VDS = VGS = VT, IS = 1µA, VSB = 0V  
10  
IGBS  
VT  
Gate  
0.1  
0.1  
0.1  
Threshold Voltage  
0.5 1.0 2.0 0.1 1.0 2.0 0.1 1.0 2.0  
V
50  
30  
23  
19  
17  
70  
45  
50  
30  
23  
19  
17  
70  
45  
50  
30  
23  
19  
17  
70  
45  
ID = 1.0mA, VSB = 0, VGS = +5V  
ID = 1.0mA, VSB = 0, VGS = +10V  
ID = 1.0mA, VSB = 0, VGS = +15V  
ID = 1.0mA, VSB = 0, VGS = +20V  
ID = 1.0mA, VSB = 0, VGS = +25V  
Drain-to-Source  
Resistance  
r
DS (ON)  
AC ELECTRICAL CHARACTERISTICS  
SD210  
SD212  
SD214  
SYMBOL  
PARAMETER  
UNITS  
TEST CONDITIONS  
MIN TYP MAX MIN TYP MAX MIN TYP MAX  
Forward  
Transconductance  
V
DS = 10V, VSB = 0V,  
gfs  
10  
15  
10  
15  
10  
15  
ms  
ID = 20mA, f = 1kHz  
SMALL SIGNAL CAPACITANCES  
C(GS+GD+GB) Gate Node  
2.4 3.5  
1.3 1.5  
3.5 5.5  
0.3 0.5  
2.4 3.5  
1.3 1.5  
3.5 5.5  
0.3 0.5  
2.4 3.5  
1.3 1.5  
3.5 5.5  
0.3 0.5  
C(GD+DB)  
C(GS+SB)  
CDG  
Drain Node  
V
V
DS = 10V, f = 1MHz  
GS = VBS = -15V  
pF  
Source Node  
Reverse Transfer  
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other  
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.  
CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025  

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