- 最新上传
IMW65R027M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMW65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。此 SiC MOSFET 采用 TO247 3 引脚封装，以提供经济高效的性能。
INFINEON
MSYSTEM
M6DXU-T8R3-M2
Euro Terminal Ultra-Slim Signal Conditioners M6D Series
MSYSTEM
F2VF-FZ-R
Super-mini Signal Conditioners F2 Series
MSYSTEM
MSYSTEM
MS9595-467
BRACKET, ANGLE, 90°, CRES UNS S32100, .190 X .375 BOLT
UMPCO
TE
MURATA
ECE
KPK-1E-G
Plug-in Signal Conditioners K-UNIT
MSYSTEM
MSYSTEM
MURATA
FJT-26-R/BL
Space-saving Plug-in Signal Conditioners F-UNIT
MSYSTEM
SUNTSU
LTC7871
100V Half-Bridge Driver with Floating Grounds and Adjustable Dead-Time
ADI
BJL36110LU
Circuit breaker, PowerPact B, 110A, 3 poles, 600Y/347V AC, 25kA at 600Y/347 UL, Everlink, control wire ON end
SCHNEIDER
NUVOTON
EATON
M6DXU-T7R4-M2
Euro Terminal Ultra-Slim Signal Conditioners M6D Series
MSYSTEM
ECE
SUNTSU
FES16ET
16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode
THINKISEMI
SGM2214
300mA, Low Quiescent Current and Low Dropout Voltage Regulator
SGMICRO
NUVOTON
MSYSTEM
NUVOTON
ETC
M6SXR-0V3-R
Tension-Clamp Ultra-Slim Signal Conditioners M6S Series
MSYSTEM
NUVOTON
MSYSTEM
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KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH
