IMW65R027M1H [INFINEON]
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMW65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。此 SiC MOSFET 采用 TO247 3 引脚封装，以提供经济高效的性能。;
| 型号： | IMW65R027M1H |
| 厂家： | 
Infineon |
| 描述： | CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMW65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。此 SiC MOSFET 采用 TO247 3 引脚封装，以提供经济高效的性能。 半导体 |
| 文件： | 总15页 (文件大小：1459K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMW65R027M1H
MOSFET
PG-TOꢀ247-3
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
Theꢀ650ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology
developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap
SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ650VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique
combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh
temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost
effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.
Tab
1
2
3
Features
•ꢀOptimizedꢀswitchingꢀbehaviorꢀatꢀhigherꢀcurrents
•ꢀCommutationꢀrobustꢀfastꢀbodyꢀdiodeꢀwithꢀlowꢀQrr
•ꢀSuperiorꢀgateꢀoxideꢀreliability
•ꢀBestꢀthermalꢀconductivityꢀandꢀbehavior
Drain
•ꢀLowerꢀRDS(on)ꢀandꢀpulseꢀcurrentꢀdependencyꢀonꢀtemperature
•ꢀIncreasedꢀavalancheꢀcapability
Pin 2, Tab
•ꢀCompatibleꢀwithꢀstandardꢀdriversꢀ(recommendedꢀdrivingꢀvoltage:ꢀ18V)
*1
Gate
Pin 1
Benefits
Source
Pin 3
*1: Internal body diode
•ꢀUniqueꢀcombinationꢀofꢀhighꢀperformance,ꢀhighꢀreliabilityꢀandꢀeaseꢀofꢀuse
•ꢀEaseꢀofꢀuseꢀandꢀintegration
•ꢀSuitableꢀforꢀtopologiesꢀwithꢀcontinuousꢀhardꢀcommutation
•ꢀHigherꢀrobustnessꢀandꢀsystemꢀreliability
•ꢀEfficiencyꢀimprovement
•ꢀReducedꢀsystemꢀsizeꢀleadingꢀtoꢀhigherꢀpowerꢀdensity
Potentialꢀapplications
•ꢀSMPS
•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)
•ꢀSolarꢀPVꢀinverters
•ꢀEVꢀchargingꢀinfrastructure
•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation
•ꢀClassꢀDꢀamplifiers
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDSꢀ@ꢀTJꢀ=ꢀ25ꢀ°C
RDS(on),typ
Value
650
27
Unit
V
mΩ
nC
A
QG,typ
62
ID,pulse
185
147
22.2
Qossꢀ@ꢀ400ꢀV
Eossꢀ@ꢀ400ꢀV
nC
µJ
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IMW65R027M1H
PG-TO 247-3
65R027M1
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTJꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
47
39
TCꢀ=ꢀ25ꢀ°C
A
Continuous drain current1)
Pulsed drain current2)
ID
TCꢀ=ꢀ100ꢀ°C
ID,pulse
EAS
-
-
-
-
185
326
A
TCꢀ=ꢀ25ꢀ°C
IDꢀ=ꢀ12.2ꢀA,ꢀVDDꢀ=ꢀ50ꢀV,ꢀLꢀ=ꢀ4.4ꢀmH;
see table 10
Avalanche energy, single pulse
mJ
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFETꢀdv/dtꢀruggedness
EAR
IAS
-
-
-
-
-
-
1.63
12.2
200
mJ
A
IDꢀ=ꢀ12.2ꢀA,ꢀVDDꢀ=ꢀ50ꢀV;ꢀseeꢀtableꢀ10
-
dv/dt
V/ns VDSꢀ=ꢀ0...400ꢀV
Gate source voltage (recommended
driving voltage)
VGS
0
-
18
V
ACꢀ(fꢀ>ꢀ1ꢀHz)
Gate source voltage (dynamic)
Power dissipation
VGS
Ptot
Tstg
TJ
-5
-
-
-
-
-
-
-
-
23
V
tpulse,negativeꢀ<=ꢀ15ꢀns
-
189
150
150
60
W
°C
°C
TCꢀ=ꢀ25ꢀ°C
Storage temperature
-55
-
-
Operating junction temperature
-55
Mounting torque
-
-
-
-
-
Ncm M3 and M3.5 screws
Continuous diode forward current1)
Diode pulse current2)
IS
47
A
A
V
TCꢀ=ꢀ25ꢀ°C
IS,pulse
VISO
185
n.a.
TCꢀ=ꢀ25ꢀ°C
Insulation withstand voltage
Vrms,ꢀTCꢀ=ꢀ25ꢀ°C,ꢀtꢀ=ꢀ1ꢀmin
1)ꢀLimitedꢀbyꢀTJ,max
2)ꢀPulseꢀwidthꢀtpꢀlimitedꢀbyꢀTJ,max
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.66
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTJꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Typ.
-
Max.
-
Drain-source breakdown voltage
Gate threshold voltage1)
V(BR)DSS
V(GS)th
V
V
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ1.1ꢀmA
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ11ꢀmA
4.5
5.7
-
-
1
2
150
-
VDSꢀ=ꢀ650ꢀV,ꢀVGSꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ25ꢀ°C
VDSꢀ=ꢀ650ꢀV,ꢀVGSꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ150ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGSꢀ=ꢀ20ꢀV,ꢀVDSꢀ=ꢀ0ꢀV
-
-
0.027 0.034
0.035
VGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ38.3ꢀA,ꢀTJꢀ=ꢀ25ꢀ°C
VGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ38.3ꢀA,ꢀTJꢀ=ꢀ150ꢀ°C
RDS(on)
RG
-
-
3.0
-
Ω
fꢀ=ꢀ1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
2131
22
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
Input capacitance
Reverse capacitance
Output capacitance2)
Output charge2)
Ciss
Crss
Coss
Qoss
-
-
-
-
pF
pF
pF
nC
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz
calculationꢀbasedꢀonꢀCoss
-
244
317
191
147
Effective output capacitance, energy
related3)
VGSꢀ=ꢀ0ꢀV,
VDSꢀ=ꢀ0...400ꢀV
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
278
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
Effective output capacitance, time
related4)
IDꢀ=ꢀconstant,ꢀVGSꢀ=ꢀ0ꢀV,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VDSꢀ=ꢀ0...400ꢀV
368
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ38.3ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
24.4
13.6
22.7
14.2
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ38.3ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ38.3ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ38.3ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9
1)ꢀTestedꢀafterꢀ1ꢀmsꢀpulseꢀatꢀVGSꢀ=ꢀ+20ꢀV
2)ꢀMaximumꢀspecificationꢀisꢀdefinedꢀbyꢀcalculatedꢀsixꢀsigmaꢀupperꢀconfidenceꢀbound
3)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV
4)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ38.3ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
-
17
-
nC
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ38.3ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV
-
-
14
62
-
-
nC
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ38.3ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV
nC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
4.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGSꢀ=ꢀ0ꢀV,ꢀIFꢀ=ꢀ38.3ꢀA,ꢀTJꢀ=ꢀ25ꢀ°C
VRꢀ=ꢀ400ꢀV,ꢀIFꢀ=ꢀ38.3ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
diF/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8
-
-
-
102
239
10.6
-
-
-
ns
VRꢀ=ꢀ400ꢀV,ꢀIFꢀ=ꢀ38.3ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
diF/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8
Reverse recovery charge
Qrr
Irrm
nC
A
VRꢀ=ꢀ400ꢀV,ꢀIFꢀ=ꢀ38.3ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
diF/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
200
103
102
101
100
10-1
10-2
1 µs
150
100
50
10 µs
100 µs
1 ms
10 ms
DC
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
102
101
0.5
0.2
10 µs
100 µs
1 ms
10-1
0.1
100
0.05
0.02
0.01
10-1
10 ms
DC
single pulse
10-2
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
300
300
250
200
150
100
50
250
200
150
100
50
18 V
18 V
15 V
12 V
15 V
12 V
10 V
8 V
10 V
8 V
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.110
2.0
0.100
15 V
10 V
12 V
0.090
0.080
0.070
0.060
0.050
0.040
0.030
1.5
1.0
0.5
18 V
0
50
100
150
200
250
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
TJꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=38.3ꢀA;ꢀVGS=18ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
300
20
18
16
14
12
10
8
250
200
150
400 V
150 °C
100
50
0
6
4
25 °C
2
0
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
60
70
80
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=38.3ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
103
103
102
102
25 °C
150 °C
25 °C
150 °C
101
101
100
100
10-1
10-1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VSDꢀ[V]
VSDꢀ[V]
IF=f(VSD);ꢀparameter:ꢀTj
IF=f(VSD);ꢀVGS=18ꢀV;ꢀparameter:ꢀTj
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
Diagramꢀ13:ꢀAvalancheꢀenergy
Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage
350
690
680
670
660
650
640
630
620
300
250
200
150
100
50
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
TJꢀ[°C]
TJꢀ[°C]
EAS=f(Tj);ꢀID=12.2ꢀA;ꢀVDD=50ꢀV
VBR(DSS)=f(Tj);ꢀID=1.1ꢀmA
Diagramꢀ15:ꢀTyp.ꢀcapacitances
Diagramꢀ16:ꢀTyp.ꢀCossꢀstoredꢀenergy
104
35
30
25
20
15
10
5
Ciss
103
102
101
Coss
Crss
0
0
50 100 150 200 250 300 350 400 450 500
0
50 100 150 200 250 300 350 400 450 500
VDSꢀ[V]
VDSꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Eoss=f(VDS)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge
220
200
180
160
140
120
100
80
60
40
20
0
0
50 100 150 200 250 300 350 400 450 500
VDSꢀ[V]
Qoss=f(VDS
)
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
6ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
MAX.
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
A
A1
A2
b
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
SCALE 3:1
0 1 2 3 4
5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolSiCꢀM1ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolSiCꢀM1ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolSiCꢀM1ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2019-12-16
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R027M1H
RevisionꢀHistory
IMW65R027M1H
Revision:ꢀ2019-12-16,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-12-16
Trademarks
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2019-12-16
相关型号：
IMW65R030M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMW65R030M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。 此 SiC MOSFET 采用 TO247 3 引脚封装，以提供经济高效的性能。
INFINEON
IMW65R039M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMW65R039M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。 此 SiC MOSFET 采用 TO247 3 引脚封装，以提供经济高效的性能。
INFINEON
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