CAT25C64PA-TE13 [CATALYST]

64K/128K-Bit SPI Serial CMOS E2PROM; 64K / 128K位SPI串行E2PROM CMOS
CAT25C64PA-TE13
型号: CAT25C64PA-TE13
厂家: CATALYST SEMICONDUCTOR    CATALYST SEMICONDUCTOR
描述:

64K/128K-Bit SPI Serial CMOS E2PROM
64K / 128K位SPI串行E2PROM CMOS

可编程只读存储器
文件: 总9页 (文件大小:101K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Advance Information  
CAT25C64/128  
64K/128K-Bit SPI Serial CMOS E2PROM  
FEATURES  
1,000,000 Program/Erase Cycles  
100 Year Data Retention  
5 MHz SPI Compatible  
1.8 to 6.0 Volt Operation  
Hardware and Software Protection  
Zero Standby Current  
Self-Timed Write Cycle  
8-Pin DIP/SOIC, 16-Pin SOIC and 20-Pin TSSOP  
64-Byte Page Write Buffer  
Low Power CMOS Technology  
SPI Modes (0,0)  
Block Write Protection  
– Protect 1/4, 1/2 or all of E2PROM Array  
Commercial, Industrial and Automotive  
Temperature Ranges  
DESCRIPTION  
required to access the device. The HOLD pin may be  
used to suspend any serial communication without  
resetting the serial sequence. The CAT25C64/128 is  
designed with software and hardware write protection  
features including Block write protection. The device is  
available in 8-pin DIP, 8-pin SOIC, 16-pin SOIC and 20-  
pin TSSOP packages.  
TheCAT25C64/128isa64K/128K-BitSPISerialCMOS  
E2PROM internally organized as 8Kx8/16Kx8 bits.  
Catalyst’s advanced CMOS Technology substantially  
reduces device power requirements. The CAT25C64/  
128 features a 64-byte page write buffer. The device  
operates via the SPI bus serial interface and is enabled  
thoughaChipSelect(CS). InadditiontotheChipSelect,  
the clock input (SCK), data in (SI) and data out (SO) are  
PIN CONFIGURATION  
BLOCK DIAGRAM  
SOIC Package (S)  
SOIC Package (S16)  
TSSOP Package (U20)  
1
2
3
4
8
7
6
5
V
CS  
SO  
WP  
CC  
16  
1
2
3
4
5
6
7
8
VCC  
HOLD  
NC  
1
NC  
NC  
CS  
SO  
SO  
NC  
NC  
WP  
SS  
NC  
NC  
20  
19  
18  
17  
16  
15  
CS  
SO  
HOLD  
SCK  
SI  
VCC  
HOLD  
HOLD  
NC  
2
15  
14  
13  
12  
11  
10  
9
3
NC  
NC  
NC  
NC  
WP  
VSS  
V
4
SS  
SENSE AMPS  
SHIFT REGISTERS  
NC  
5
6
NC  
NC  
7
14 SCK  
13 SI  
12 NC  
11 NC  
DIP Package (P)  
NC  
V
8
SCK  
SI  
9
1
2
3
4
8
7
6
5
COLUMN  
DECODERS  
V
WORD ADDRESS  
BUFFERS  
CS  
SO  
CC  
10  
HOLD  
SCK  
SI  
WP  
V
SS  
SO  
SI  
I/O  
CONTROL  
PIN FUNCTIONS  
Pin Name  
E2PROM  
ARRAY  
CS  
Function  
SPI  
XDEC  
WP  
CONTROL  
LOGIC  
SO  
Serial Data Output  
Serial Clock  
HOLD  
SCK  
SCK  
WP  
VCC  
VSS  
CS  
BLOCK  
PROTECT  
LOGIC  
Write Protect  
+1.8V to +6.0V Power Supply  
Ground  
DATA IN  
STORAGE  
Chip Select  
SI  
Serial Data Input  
Suspends Serial Input  
HIGH VOLTAGE/  
TIMING CONTROL  
HOLD  
STATUS  
REGISTER  
NC  
No Connect  
25C128 F02  
© 1999 by Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
Doc No. 25069-00 6/99 SPI-1  
1
CAT25C64/128  
Advance Information  
ABSOLUTE MAXIMUM RATINGS*  
*COMMENT  
Temperature Under Bias ................. –55°C to +125°C  
Storage Temperature....................... –65°C to +150°C  
Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device.  
These are stress ratings only, and functional operation  
of the device at these or any other conditions outside of  
those listed in the operational sections of this specifica-  
tion is not implied. Exposure to any absolute maximum  
rating for extended periods may affect device perfor-  
mance and reliability.  
Voltage on any Pin with  
Respect to Ground(1) ............ –2.0V to +VCC +2.0V  
VCC with Respect to Ground ............... –2.0V to +7.0V  
Package Power Dissipation  
Capability (Ta = 25°C)................................... 1.0W  
Lead Soldering Temperature (10 secs) ............ 300°C  
Output Short Circuit Current(2) ........................ 100 mA  
RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Endurance  
Min.  
1,000,000  
100  
Max.  
Units  
Cycles/Byte  
Years  
Reference Test Method  
MIL-STD-883, Test Method 1033  
MIL-STD-883, Test Method 1008  
MIL-STD-883, Test Method 3015  
JEDEC Standard 17  
(3)  
NEND  
(3)  
TDR  
Data Retention  
ESD Susceptibility  
Latch-Up  
(3)  
VZAP  
2000  
Volts  
(3)(4)  
ILTH  
100  
mA  
D.C. OPERATING CHARACTERISTICS  
= +1.8V to +6.0V, unless otherwise specified.  
V
CC  
Limits  
Typ.  
Symbol  
Parameter  
Min.  
Max.  
Units  
Test Conditions  
ICC1  
Power Supply Current  
(Operating Write)  
10  
mA  
VCC = 5V @ 5MHz  
SO=open; CS=Vss  
ICC2  
ISB  
Power Supply Current  
(Operating Read)  
2
0
mA  
VCC = 5.5V  
FCLK = 5MHz  
Power Supply Current  
(Standby)  
µA  
CS = VCC  
VIN = VSS or VCC  
ILI  
Input Leakage Current  
Output Leakage Current  
2
3
µA  
µA  
ILO  
VOUT = 0V to VCC  
,
CS = 0V  
(3)  
VIL  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
-1  
VCC x 0.3  
VCC + 0.5  
0.4  
V
V
V
V
(3)  
VIH  
VCC x 0.7  
4.5VV <5.5V  
VOL1  
VOH1  
CC  
= 3.0mA  
= -1.6mA  
I
I
OL  
OH  
VCC - 0.8  
VCC-0.2  
VOL2  
VOH2  
Output Low Voltage  
Output High Voltage  
0.2  
V
V
1.8VVCC<2.7V  
IOL = 150µA  
IOH = -100µA  
Note:  
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC  
voltage on output pins is V +0.5V, which may overshoot to V +2.0V for periods of less than 20 ns.  
CC  
CC  
(2) Output shorted for no more than one second. No more than one output shorted at a time.  
(3) This parameter is tested initially and after a design or process change that affects the parameter.  
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V +1V.  
CC  
Doc. No. 25069-00 6/99 SPI-1  
2
Advance Information  
CAT25C64/128  
Figure 1. Sychronous Data Timing  
t
CS  
VIH  
CS  
VIL  
t
CSH  
t
CSS  
VIH  
VIL  
t
t
WL  
SCK  
SI  
WH  
t
t
H
SU  
VIH  
VALID IN  
V
IL  
t
RI  
FI  
t
t
V
t
t
HO  
DIS  
VOH  
VOL  
HI-Z  
HI-Z  
SO  
A.C. CHARACTERISTICS  
Limits  
VCC  
2.5V-6V  
Min. Max. Min. Max. Min. Max. UNITS Conditions  
Vcc=  
1.8V-6V  
=
VCC  
4.5V-5.5V  
=
Test  
SYMBOL PARAMETER  
tSU  
tH  
Data Setup Time  
Data Hold Time  
SCK High Time  
SCK Low Time  
Clock Frequency  
100  
100  
250  
250  
DC  
70  
70  
35  
35  
80  
80  
DC  
ns  
ns  
ns  
ns  
MHz  
ns  
µs  
µs  
ns  
ns  
ms  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tWH  
tWL  
fSCK  
tLZ  
150  
150  
DC  
1
50  
2
3
50  
2
5
50  
2
HOLD to Output Low Z  
Input Rise Time  
(1)  
tRI  
CL = 50pF  
(1)  
tFI  
Input Fall Time  
2
2
2
tHD  
HOLD Setup Time  
HOLD Hold Time  
Write Cycle Time  
Output Valid from Clock Low  
Output Hold Time  
Output Disable Time  
HOLD to Output High Z  
CS High Time  
250  
250  
250  
250  
40  
40  
tCD  
tWC  
tV  
10  
10  
5
250  
220  
100  
tHO  
tDIS  
tHZ  
0
0
0
250  
150  
250  
150  
100  
50  
tCS  
1000  
1000  
1000  
330  
100  
100  
200  
100  
100  
tCSS  
tCSH  
NOTE:  
CS Setup Time  
CS Hold Time  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
Doc No. 25069-00 6/99 SPI-1  
3
CAT25C64/128  
Advance Information  
CS: Chip Select  
FUNCTIONAL DESCRIPTION  
CSistheChipselectpin.CSlowenablestheCAT25C64/  
128 and CS high disables the CAT25C64/128. CS high  
takes the SO output pin to high impedance and forces  
the devices into a Standby Mode (unless an internal  
writeoperationisunderway). TheCAT25C64/128draws  
ZERO current in the Standby mode. A high to low  
transition on CS is required prior to any sequence being  
initiated. A low to high transition on CS after a valid write  
sequence is what initiates an internal write cycle.  
The CAT25C64/128 supports the SPI bus data trans-  
mission protocol. The synchronous Serial Peripheral  
Interface (SPI) helps the CAT25C64/128 to interface  
directly with many of today’s popular microcontrollers.  
The CAT25C64/128 contains an 8-bit instruction regis-  
ter. (The instruction set and the operation codes are  
detailed in the instruction set table)  
After the device is selected with CS going low, the first  
byte will be received. The part is accessed via the SI pin,  
with data being clocked in on the rising edge of SCK.  
Thefirstbytecontainsoneofthesixop-codesthatdefine  
the operation to be performed.  
WP: Write Protect  
WP is the Write Protect pin. The Write Protect pin will  
allow normal read/write operations when held high.  
When WP is tied low and the WPEN bit in the status  
register is set to “1”, all write operations to the status  
register are inhibited. WP going low while CS is still low  
will interrupt a write to the status register. If the internal  
write cycle has already been initiated, WP going low will  
have no effect on any write operation to the status  
register.TheWPpinfunctionisblockedwhentheWPEN  
bit is set to 0.  
PIN DESCRIPTION  
SI: Serial Input  
SI is the serial data input pin. This pin is used to input all  
opcodes, byte addresses, and data to be written to the  
25C64/128. Input data is latched on the rising edge of  
the serial clock.  
HOLD: Hold  
SO: Serial Output  
The HOLD pin is used to pause transmission to the  
CAT25C64/128 while in the middle of a serial sequence  
without having to re-transmit entire sequence at a later  
time. To pause, HOLD must be brought low while SCK  
islow.TheSOpinisinahighimpedancestateduringthe  
timethepartispaused, andtransitionsontheSIpinswill  
beignored.Toresumecommunication,HOLDisbrought  
high, while SCK is low. (HOLD should be held high any  
time this function is not being used.) HOLD may be tied  
high directly to Vcc or tied to Vcc through a resistor.  
Figure 9 illustrates hold timing sequence.  
SO is the serial data output pin. This pin is used to  
transfer data out of the 25C64/128. During a read cycle,  
data is shifted out on the falling edge of the serial clock.  
SCK: Serial Clock  
SCK is the serial clock pin. This pin is used to synchro-  
nize the communication between the microcontroller  
and the 25C64/128. Opcodes, byte addresses, or data  
presentontheSIpinarelatchedontherisingedgeofthe  
SCK. Data on the SO pin is updated on the falling edge  
of the SCK.  
INSTRUCTION SET  
Instruction  
WREN  
WRDI  
Opcode  
Operation  
0000 0110  
0000 0100  
0000 0101  
0000 0001  
0000 0011  
0000 0010  
Enable Write Operations  
Disable Write Operations  
Read Status Register  
Write Status Register  
Read Data from Memory  
Write Data to Memory  
RDSR  
WRSR  
READ  
WRITE  
Doc. No. 25069-00 6/99 SPI-1  
4
Advance Information  
CAT25C64/128  
array. These bits are non-volatile.  
STATUS REGISTER  
TheWPEN(WriteProtectEnable)isanenablebitforthe  
WP pin. The WP pin and WPEN bit in the status register  
control the programmable hardware write protect fea-  
ture. Hardware write protection is enabled when WP is  
low and WPEN bit is set to high. The user cannot write  
tothestatusregister(includingtheblockprotectbitsand  
the WPEN bit) and the block protected sections in the  
memory array when the chip is hardware write pro-  
tected. Only the sections of the memory array that are  
not block protected can be written. Hardware write  
protection is disabled when either WP pin is high or the  
WPEN bit is zero.  
The Status Register indicates the status of the device.  
The RDY (Ready) bit indicates whether the CAT25C64/  
128 is busy with a write operation. When set to 1 a write  
cycle is in progress and when set to 0 the device  
indicates it is ready. This bit is read only.  
The WEL (Write Enable) bit indicates the status of the  
writeenablelatch. Whensetto1, thedeviceisinaWrite  
Enable state and when set to 0 the device is in a Write  
Disablestate. TheWELbitcanonlybesetbytheWREN  
instruction and can be reset by the WRDI instruction.  
The BP0 and BP1 (Block Protect) bits indicate which  
blocks are currently protected. These bits are set by the  
user issuing the WRSR instruction. The user is allowed  
to protect quarter of the memory, half of the memory or  
the entire memory by setting these bits. Once protected  
the user may only read from the protected portion of the  
STATUS REGISTER  
7
6
5
4
3
2
1
0
WPEN  
X
X
X
BP1  
BP0  
WEL  
RDY  
BLOCK PROTECTION BITS  
Status Register Bits  
Array Address  
Protected  
Protection  
BP1  
0
BP0  
0
None  
No Protection  
0
1
25C128: 3000-3FFF  
25C64:1800-1FFF  
Quarter Array Protection  
Half Array Protection  
Full Array Protection  
1
1
0
1
25C128: 2000-3FFF  
25C64:1000-1FFF  
25C128: 0000-3FFF  
25C64:1000-1FFF  
WRITE PROTECT ENABLE OPERATION  
Protected  
Blocks  
Unprotected  
Blocks  
Status  
WPEN  
WP  
X
WEL  
Register  
0
0
1
1
X
X
0
1
0
1
0
1
Protected  
Protected  
Protected  
Protected  
Protected  
Protected  
Protected  
Writable  
Protected  
Writable  
Protected  
Writable  
Protected  
Writable  
X
Low  
Low  
High  
High  
Protected  
Protected  
Protected  
Writable  
Doc No. 25069-00 6/99 SPI-1  
5
CAT25C64/128  
Advance Information  
After the correct read instruction and address are sent,  
the data stored in the memory at the selected address is  
shifted out on the SO pin. The data stored in the memory  
at the next address can be read sequentially by continu-  
ing to provide clock pulses. The internal address pointer  
is automatically incremented to the next higher address  
after each byte of data is shifted out. When the highest  
address (1FFFh for 25C64 and 3FFFh for 25C128) is  
reached, the address counter rolls over to 0000h allow-  
ing the read cycle to be continued indefinitely. The read  
operation is terminated by pulling the CS high. To read  
the status register, RDSR instruction should be sent.  
The contents of the status register are shifted out on the  
SO line. The status register may be read at any time  
even during a write cycle. Read sequece is illustrated in  
Figure 4. Reading status register is illustrated in Figure 5.  
DEVICE OPERATION  
Write Enable and Disable  
The CAT25C64/128 contains a write enable latch. This  
latch must be set before any write operation. The device  
powers up in a write disable state when Vcc is applied.  
WRENinstructionwillenable writes(setthelatch)tothe  
device. WRDI instruction will disable writes (reset the  
latch) to the device. Disabling writes will protect the  
device against inadvertent writes.  
READ Sequence  
The part is selected by pulling CS low. The 8-bit read  
instruction is transmitted to the CAT25C64/128, fol-  
lowed by the 16-bit address(the three Most Significant  
Bits are don’t care for 25C64 and two most significant  
bits are don't care for 25C128).  
Figure 2. WREN Instruction Timing  
CS  
SK  
1
1
0
SI  
0
0
0
0
0
HIGH IMPEDANCE  
SO  
Figure 3. WRDI Instruction Timing  
CS  
SK  
1
0
0
SI  
0
0
0
0
0
HIGH IMPEDANCE  
SO  
Doc. No. 25069-00 6/99 SPI-1  
6
Advance Information  
CAT25C64/128  
WRITE Sequence  
Byte Write  
The CAT25C64/128 powers up in a Write Disable state.  
Prior to any write instructions, the WREN instruction  
must be sent to CAT25C64/128. The device goes into  
Write enable state by pulling the CS low and then  
clockingtheWRENinstructionintoCAT25C64/128.The  
CS must be brought high after the WREN instruction to  
enable writes to the device. If the write operation is  
initiated immediately after the WREN instruction without  
CS being brought high, the data will not be written to the  
array because the write enable latch will not have been  
properly set. Also, for a successful write operation the  
address of the memory location(s) to be programmed  
must be outside the protected address field location  
selected by the block protection level.  
Once the device is in a Write Enable state, the user may  
proceed with a write sequence by setting the CS low,  
issuing a write instruction via the SI line, followed by the  
16-bit address (the three Most Significant Bits are don’t  
care for 25C64 and two most significant bits are don't  
care for 25C128), and then the data to be written.  
Programming will start after the CS is brought high.  
Figure 6 illustrates byte write sequence.  
Figure 4. Read Instruction Timing  
CS  
0
1
2
3
4
5
6
7
8
9
10  
20 21 22 23 24 25 26 27 28 29 30  
SK  
OPCODE  
BYTE ADDRESS*  
SI  
0
0
0
0
0
0
1
1
DATA OUT  
HIGH IMPEDANCE  
SO  
7
6
5
4
3
2
1
0
MSB  
*Please check the instruction set table for address  
Figure 5. RDSR Instruction Timing  
CS  
0
1
2
3
4
5
1
6
0
7
1
8
9
10  
11  
12  
13  
14  
SCK  
OPCODE  
0
0
0
0
0
SI  
DATA OUT  
HIGH IMPEDANCE  
SO  
5
7
6
4
3
2
1
0
MSB  
Doc No. 25069-00 6/99 SPI-1  
7
CAT25C64/128  
Advance Information  
restriction is that the 64 bytes must reside on the same  
page. If the address counter reaches the end of the  
page and clock continues, the counter will “roll over” to  
the first address of the page and overwrite any data that  
may have been written. The CAT25C64/128 is auto-  
maticallyreturnedtothewritedisablestateatthecomple-  
tion of the write cycle. Figure 8 illustrates the page write  
sequence.  
During an internal write cycle, all commands will be  
ignored except the RDSR (Read Status Register) in-  
struction.  
TheStatusRegistercanbereadtodetermineifthewrite  
cycle is still in progress. If Bit 0 of the Status Register is  
set at 1, write cycle is in progress. If Bit 0 is set at 0, the  
device is ready for the next instruction.  
Page Write  
To write to the status register, the WRSR instruction  
should be sent. Only Bit 2, Bit 3 and Bit 7 of the status  
register can be written using the WRSR instruction.  
Figure 7 illustrates the sequence of writing to status  
register.  
The CAT25C64/128 features page write capability. Afer  
the first initial byte the host may continue to write up to  
64 bytes of data to the CAT25C64/128. After each byte  
of data is received, six lower order address bits are  
internally incremented by one; the high order bits of  
address will remain constant. The only  
Figure 6. Write Instruction Timing  
CS  
0
1
2
3
4
5
6
7
8
21 22 23 24 25 26 27 28 29 30 31  
SK  
SI  
OPCODE  
DATA IN  
D7 D6 D5 D4 D3 D2 D1 D0  
0
0
0
0
0
0
1
0
ADDRESS  
HIGH IMPEDANCE  
SO  
Figure 7. WRSR Instruction Timing  
CS  
0
1
2
3
4
5
6
7
1
8
9
6
10  
5
11  
4
12  
13  
2
14  
1
15  
0
SCK  
OPCODE  
DATA IN  
SI  
0
0
0
0
0
0
0
7
3
MSB  
HIGH IMPEDANCE  
SO  
Doc. No. 25069-00 6/99 SPI-1  
8
Advance Information  
CAT25C64/128  
DESIGN CONSIDERATIONS  
The CAT25C64/128 powers up in a write disable state  
and in a low power standby mode. A WREN instruction  
must be issued to perform any writes to the device after  
power up. Also,on power up CS should be brought low  
to enter a ready state and receive an instruction. After  
a successful byte/page write or status register write the  
CAT25C64/128 goes into a write disable mode. CS  
mustbesethighafterthepropernumberofclockcycles  
to start an internal write cycle. Access to the array  
duringaninternal write cycle is ignored and program-  
ming is continued. On power up, SO is in a high  
impedance.  
Figure 8. Page Write Instruction Timing  
CS  
24+(N-1)x8-1..24+(N-1)x8 24+Nx8-1  
0
1
2
3
4
5
6
7
8
21 22 23  
32-39  
24-31  
SK  
SI  
DATA IN  
Data Data  
OPCODE  
Data  
Byte 1  
Data Byte N  
0
0
0
0
0
0
1
0
ADDRESS  
0
Byte 2 Byte 3  
7..1  
HIGH IMPEDANCE  
SO  
Figure 9. HOLD Timing  
CS  
t
t
CD  
CD  
SCK  
t
HD  
t
HD  
HOLD  
SO  
t
HZ  
HIGH IMPEDANCE  
t
LZ  
ORDERING INFORMATION  
Prefix  
Device #  
Suffix  
-1.8  
25C64  
S
CAT  
TE13  
I
Product  
Number  
25C64: 64K  
25C128: 128K  
Temperature Range  
Tape & Reel  
TE13: 2000/Reel  
Optional  
Company ID  
Blank = Commercial (0˚C to +70˚C)  
I = Industrial (-40˚C to +85˚C)  
A = Automotive (-40˚ to +105˚C)*  
Operating Voltage  
Blank = 2.5 to 6.0V  
1.8 = 1.8 to 6.0V  
Package  
P = PDIP  
S = 8-Pin SOIC  
S16 = 16-Pin SOIC  
U20 = 20-Pin TSSOP  
* -40˚C to +125˚C is available upon request  
Notes:  
(1) The device used in the above example is a 25C64SI-1.8TE13 (SOIC, Industrial Temperature, 1.8 Volt to 6 Volt Operating Voltage,  
Tape & Reel)  
Doc No. 25069-00 6/99 SPI-1  
9

相关型号:

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