CAT808NTFI-32-G [CATALYST]
Power Management Circuit, Fixed, +3.2VV,;
| 型号： | CAT808NTFI-32-G |
| 厂家： | 
CATALYST SEMICONDUCTOR |
| 描述： | Power Management Circuit, Fixed, +3.2VV, |
| 文件： | 总8页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CAT808
Low-Power Precision Voltage Detector
FEATURES
DESCRIPTION
Ultra Low Current Consumption 2.4µA
Accurate Voltage Detection Threshold
Fine Voltage Detection Threshold Resolution
Active Low Open Drain Output
The CAT808 is a high-precision voltage detector
designed for monitoring single cell and multi-cell batteries.
Voltage detection thresholds between 2.0V and 3.2V are
provided with 0.1V resolution and ±3.0% accuracy.
The CAT808 open-drain output is active low until the
VDD voltage exceeds the detection threshold. A low
hysteresis is built into the device to minimize output
“chatter”, while VDD passes through the detection
threshold, and the output transitions high.
Available in 5-pin TSOT- 23 and 3-pin SOT- 89
RoHS compliant packages
Industrial temperature range -40°C to +85°C
APPLICATIONS
Battery-Powered Systems
Power Supply Monitoring
After the CAT808 asserts the output high condition, it
continues to monitor VDD until it drops below the
detection threshold, when the output goes low until
VDD once again exceeds the detection threshold.
Handheld and Portable Equipment
Processor Supervisor Reset
For Ordering Information details, see page 7.
PIN CONFIGURATION
TYPICAL APPLICATION
SOT-89
5-Lead Thin SOT-23
IN
VDD
DC-DC
1
2
3
OUT
VDD
1
2
3
5
OUT
NC
NC
CAT808
CONVERTER
SHDN OUT
GND
10kΩ
Battery
Voltage
V
DD
OUT
GND
4
GND
GND
Note: The value of the pull-up resistor is not critical
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 3024 Rev. A
CAT808
ABSOLUTE MAXIMUM RATINGS(1)
Parameters
Ratings
-55 to +125
-65 to +150
-2.0 to VDD + 2.0
-2.0 to 7.0
+300
Units
ºC
Temperature under Bias
Storage Temperature
Voltage on any Pin with Respect to GND(2)(3)
ºC
V
VDD with Respect to GND
V
Lead Soldering temperature (10 seconds)
ºC
TSOT-23-5
Power Dissipation
SOT-89
250
mW
mW
500
RECOMMENDED OPERATING CONDITIONS
Parameters
Ratings
+1.2 to +6.0
-40 to +85
Units
V
VDD
Operating Temperature Range
ºC
DC ELECTRICAL CHARACTERISTICS
TA = -40ºC to +85ºC, VDD = 1.2V to 6.0V
Symbol
VDET
Parameter
Conditions
Min Typ. Max Units
Detection Voltage, 27
Detection Voltage, 32
TA = -40ºC to +85ºC
TA = -40ºC to +85ºC
VDD = 4.0V
2.62 2.7 2.78
V
3.12 3.2 3.28
VDET
-
-
-
2.4
3.5
5
5
7
IDD
Current Consumption
µA
VDD = 5.0V
VDD = 6.0V
10
-
VDD=1.2V
VDD=2.4V
0.6 1.4
IOUT
Output SinkCurrent
VDS = 0.5V
mA
2.9
5
-
-
ILEAK
Output Leakage Current
Response Time
VDS = 5.0V, VDD = 5.0V
–
-
-
1
µA
µs
TPHL/LH
-
60
Δ - VDET
Detection Voltage
TA = -40ºC to +85ºC
-
±10 ±100 ppm/ºC
ΔTA ● -VDET Temperature Coefficient(4)
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the devices at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and
reliability.
(2) The Minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20ns.
(3) Latch-up protection is provided for stresses up to 100mA on all pins from -1V to VCC +1V.
(4) The temperature change ratio in the detection voltage [ppm/°C] is calculated by using the following equation:
Δ − VDET
×1,000,000[ppm/ºC]
ΔTA • -VDET
Doc. No. 3024 Rev. A
2
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT808
OPERATION – VOLTAGE DETECTOR
The CAT808 has an active low output that asserts
(pulls low) when the supply voltage drops below the
detection threshold voltage (VDET). The open-drain
output requires an external pull-up resistor between
the output pin and the supply voltage (as shown in
BLOCK DIAGRAM
OUT
VDD
¯¯¯¯
the typical application diagram). On power-up, OUT
is held active low until the supply voltage (VDD) rises
¯¯¯¯
above VDET. While VDD is above VDET, OUT stays
¯¯¯¯
high until VDD drops below VDET, then OUT once
again goes low.
VOLTAGE
REFERENCE
TIMING DIAGRAM
VDD
*
VDET(MAX)
VDET
VDET(MAX)
VDET
VDET(MIN)
VDET(MIN)
GND
T
PLH
T
PHL
VOH
OUT Slews with VDD
OUT
* Voltage of VDD below 1 volt will not be able to maintain low output.
PIN FUNCTIONS
Pin
VDD
Function
Voltage Input and Power Supply
GND
Ground Pin
¯¯¯¯
OUT
Active Low Open Drain output
No Connect, the pin is electrically open
NC
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
3
Doc. No. 3024 Rev. A
CAT808
TYPICAL ELECTRICAL OPERATING CHARACTERISTICS
Typical values at TA = 25°C.
VDD Supply Current vs. VDD Supply Voltage
VDET Detection Voltage vs. Temperature
2.71
2.705
2.7
5
4
3
2
1
0
2
3
4
5
6
2.695
-40
-5
30
65
100
Supply Voltage (V)
Temperature (ºC)
Response time vs. Load Capacitance
IOUT Transistor Output Current vs. VDD Supply Voltage
100
10.00
-40ºC
8.00
TPLH
10
1
+25ºC
6.00
+90ºC
4.00
0.1
0.01
2.00
0.00
TPHL
0.001
0.01
0.1
1
10
100
1.00
1.50
2.00
2.50
Load capacitance [nF]
VDD (V)
Doc. No. 3024 Rev. A
4
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT808
PACKAGE INFORMATION
5-LEAD TSOT-23 PACKAGE
e
e
E
E1
E1
e1
D
GAUGE
PLANE
A2
c
A
L2
L
A1
b
L1
SYMBOL
MIN
—
NOM
—
MAX
1.00
0.10
0.90
0.45
0.20
A
A1
A2
b
0.01
0.80
0.30
0.12
0.05
0.87
—
c
0.15
D
2.90BSC
2.80BSC
1.60BSC
0.95BSC
1.90BSC
0.40
E
E1
e
e1
L
0.30
0º
0.50
8º
L1
L2
q
0.60REF
0.25BSC
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC specification MO-193.
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
5
Doc. No. 3024 Rev. A
CAT808
3-LEAD SOT-89 PACKAGE
D
D1
E
L
H
e
e1
A
C
A1
b
b
b1
SYMBOL
MIN
1.40
0.30
0.80
0.36
0.41
0.38
4.40
1.40
3.94
2.40
2.90
1.45
NOM
1.50
0.40
–
MAX
1.60
0.50
1.20
0.48
0.53
0.43
4.60
1.75
4.25
2.60
3.10
1.55
A
A1
L
b
0.42
0.47
0.40
4.50
1.60
–
b1
C
D
D1
H
E
2.50
3.00
1.50
e1
e
Notes:
(1) All dimensions are in millimeters.
(2) Lead frame material: copper.
Doc. No. 3024 Rev. A
6
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT808
EXAMPLE OF ORDERING INFORMATION
Prefix
Device #
Suffix
CAT
808N
TB
I
-27
Optional
Company ID
Product Number
Temperature Range
I = Industrial (-40°C to 85°C)
Lead Finish
G: NiPdAu
808N
Blank: Matte-Tin
Package
TB: TSOT-23-5
TF: SOT-89
Voltage Detection Level
Tape & Reel
T: Tape & Reel
1: 1000 Reel
3: 3000 Reel
-20: 2.0V
-32: 3.2V
Notes:
(1) All packages are RoHS-compliant (Lead-free, Halogen-free).
(2) The standard finish is NiPdAu.
(3) The device used in the above example is a CAT808NTBI-27-GT3 (TSOT-23-5, Industrial Temperature, 2.7V Detection Level, NiPdAu,
Tape & Reel).
(4) For additional detection voltage, package and temperature options, please contact your nearest Catalyst Semiconductor Sales office.
TOP MARKING
Part Number
Package
TSOT-23-5
TSOT-23-5
Detection Voltage
Top Marking
MVym
CAT808NTBI-27-G
CAT808NTBI-32-G
2.70
3.20
MVym
CAT808NTFI-27
CAT808NTFI-32
SOT-89
SOT-89
2.70
3.20
AAxxx
AAxxx
Notes:
(1) ym – Year and Month Code.
(2) xxx – Assembly location code and last 2 digits of assembly lot code.
(3) SOT-89 is offered in Matte-Tin only.
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
7
Doc. No. 3024 Rev. A
REVISION HISTORY
Date
Rev. Reason
Initial Issue
11/07/06
A
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applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal
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Corporate Headquarters
2975 Stender Way
Santa Clara, CA 95054
Phone: 408.542.1000
Fax: 408.542.1200
www.catsemi.com
Document No: 3024
Revision:
A
Issue date:
11/07/06
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