JAN1N6857-1 [CDI-DIODE]

SCHOTTKY BARRIER DIODES; 肖特基势垒二极管


型号：	JAN1N6857-1
厂家：	COMPENSATED DEUICES INCORPORATED
描述：	SCHOTTKY BARRIER DIODES 肖特基势垒二极管二极管
文件：	总2页 (文件大小：28K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N5711

1N5711-1

1N5712-1

1N6857-1

1N6858-1

DSB2810

DSB5712

• 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS

PER MIL-PRF-19500/444

• 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS

PER MIL-PRF-19500/445

• SCHOTTKY BARRIER DIODES

• HERMETICALLY SEALED

• METALLURGICALLY BONDED

MAXIMUM RATINGS

Operating Temperature: -65°C to +150°C

Storage Temperature: -65°C to +150°C

Operating Current: 5711 types

2810,5712 & 6858 types :75mA dc@ T

:33mA dc@ T

L = +130°C, L = 3/8”

L = +110°C, L = 3/8”

:75mA dc@ T

L = +70°C, L = 3/8”

6857 TYPE

all types:

Derating:

Derate to 0 (zero)mA@+150°C

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.

CDI

TYPE

MINIMUM

BREAKDOWN

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM REVERSE

LEAKAGE CURRENT

MAXIMUM

ESDS

CAPACITANCE @ CLASS

NUMBER

= 0 VOLTS

f = 1.0 MH^Z

V_BR@ 10

@ 1 mA

@ I

@ V

VOLTS

0.41

0.35

0.36

MILLIAMPS

100

200

150

200

VOLTS

PICO FARADS

DSB2810

1N5711,-1

DSB5712

1N5712-1

1N6857-1

1N6858-1

1.0@35

2.0

4.5

FIGURE 1

1.0@15

1.0@35

0.75@35

0.65@15

DESIGN DATA

CASE: Hermetically sealed glass case

per MIL-PRF-19500/444 and /445

DO-35 Outline

NOTE: Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds

LEAD MATERIAL: Copper clad steel.

LEAD FINISH: Tin / Lead

THERMAL RESISTANCE: (R

˚C/W maximum at L = .375 inch

): 250

OJEC

THERMAL IMPEDANCE: (Z

): 40

OJX

˚C/W maximum

NOTICE: Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.

Contact the factory for qualification completion dates. These two part numbers are

being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They

provide a more robust mechanical design and a higher ESDS class with the only

trade-off being an increase in capacitance.

POLARITY: Cathode end is banded.

MOUNTING POSITION: Any.

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

WEBSITE: http://www.cdi-diodes.com

FAX (781) 665-7379

E-mail: mail@cdi-diodes.com

1N5711, 1N5712, 1N6857, 1N6858

DSB5712 and DSB2810

INCLUDING -1 VERSIONS

100

10,000

1000

100

1.0

.01

1.0

1.2

5.0

– FORWARD VOLTAGE (V)

Figure 1.

– REVERSE VOLTAGE (V)

(PULSED)

Figure 2.

I-V Curve Showing Typical

DSB5712 and DSB2810

Forward Voltage Variation with

Temperature for the DSB5712 and

DSB2810 Schottky Diodes.

Typical Variation of Reverse

Current (I ) vs. Reverse Voltage

(V ) at Various Temperatures.

100,000

10,000

1000

100

.05

.01

1.0

1.2

1.0

100

– FORWARD VOLTAGE (V)

– REVERSE VOLTAGE (V)

(PULSED)

Figure 4.

1N5711 Typical

– FORWARD CURRENT (mA)

(PULSED)

Figure 5.

Typical Dynamic

Figure 3.

I-V Curve Showing Typical

Forward Voltage Variation with

Temperature for Schottky Diode

1N5711.

Variation of Reverse Current (I

)

Resistance (R ) vs. Forward

vs. Reverse Voltage (V ) at

Current (I ).

Various Temperatures.

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