JANKCA1N5819 [CDI-DIODE]
Rectifier Diode, Schottky, 1 Element, 1A, Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | JANKCA1N5819 |
| 厂家： | 
COMPENSATED DEUICES INCORPORATED |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, Silicon, HERMETIC SEALED PACKAGE-2 二极管 |
| 文件： | 总18页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 23 January 2004.
INCH-POUND
MIL-PRF-19500/586F
17 October 2003
SUPERSEDING
MIL-PRF-19500/586E
14 April 2000
PERFORMANCE SPECIFICATION
* SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC,
TYPES 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, Schottky barrier diodes. Four
levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and
two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (DO-41), figure 2 (DO-213AB), and figure 3 (JANC die) dimensions.
* 1.3 Maximum ratings.
Types
VRWM
V (pk)
IO1 (1)
A dc
IFSM
TSTG
A (pk)
C
°
1N5819-1, 1N5819UR-1
1N6761-1, 1N6761UR-1
45 (1)
100 (2)
1.0
1.0
25
25
-65 C to +150 C
° °
-65 C to +150 C
° °
(1) For derating curves, see figures 4 through 7.
(2) The maximum TJ depends on the voltage applied. See figures 4 through 7.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC, Post
Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/586F
* 1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at TA = +25 C.
°
Types
Max
VFM1
IF
Max
VFM3
IF
Max
Zθ
VF2
IF
= 1.0 A
Max IRM @ VRWM
pulsed method (see 4.5.1)
Max CT
VR = 5 V dc
Max RθJL or
Rθ
JX
JEC
3/8 lead length
or end cap
= 0.1 A
= 3.1 A
TJ = +25 C TJ = +100 C
°
°
IRM1
IRM2
V (pk)
V (pk)
V (pk)
mA
mA
pF
C/W
C/W
°
°
1N5819-1
1N5819UR-1
1N6761-1
0.34
0.34
0.38
0.38
0.49
0.49
0.69
0.69
0.80
0.80
NA
0.05
0.05
0.10
0.10
5.0
5.0
12.0
12.0
70
70
70
70
70
40
70
40
12
12
12
12
1N6761UR-1
NA
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (NPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein (except for related associated specifications or specification sheets), the text of this document takes
precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
2
MIL-PRF-19500/586F
Dimensions
Symbol
Inches
Millimeters
Notes
Min
.028
.080
.160
1.000
Max
.034
.107
.205
Min
0.71
2.03
Max
0.86
2.72
5.21
LD
BD
BL
LL
3
3
4.06
25.40
LL1
.050
1.27
4
NOTES:
1. Dimensions are in Inch pounds.
2. Millimeter equivalents are given for general information only.
3. Package contour optional within cylinder of diameter BD and length BL. Slugs if any shall not be
included within this cylinder, but shall not be subject to the minimum limit of BD.
4. Lead diameter not controlled in this zone to allow for flash, lead finish build-up, and minor
irregularities other than slugs.
5. Dimensions are in accordance with ASME Y 14.5M.
* FIGURE 1. Physical dimensions, 1N5819-1 and 1N6761-1 (DO-41).
3
MIL-PRF-19500/586F
Dimensions
Symbol
Inches
Millimeters
Min
Max
.205
Min
Max
5.21
BL
.189
4.80
BL1
BD
ECT
S
.159 REF
4.04 REF
.094
.016
.001
.105
.022
2.39
0.41
0.03
2.67
0.56
NOTES:
1. Dimensions are in Inch pounds.
2. Millimeter equivalents are given for general information only.
3. Gap not controlled, shape of body and gap not controlled.
4. Dimensions are in accordance with ASME Y 14.5M.
* FIGURE 2. Physical dimensions of surface mount family, 1N5819UR-1, and 1N6761UR-1 (DO-213AB).
4
MIL-PRF-19500/586F
Dimensions
Symbol
Millimeters
Inches
Min
Max
Min
Max
A
B
0.89
0.79
0.99
0.84
.035
.031
.039
.033
Design data
Metallization:
Top: (Anode)........................... AL
Back: (Cathode)...................... Au
AL thickness ............................ 25,000 Å min
Gold thickness......................... 4,000 Å min
Chip thickness ......................... 10 Mils 2 Mils
±
FIGURE 3. JANC (A-version) die dimensions.
5
MIL-PRF-19500/586F
3. REQUIREMENTS
* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
* 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall
be as specified in MIL-PRF-19500 and on figures 1, 2, and 3 herein.
3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL-PRF-19500,
MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document
(see 6.2).
3.4.2 Lead material. Lead material shall be copper clad steel with a minimum of 50 percent copper by weight.
* 3.4.3 Metallurgical bond construction. Devices shall be category I or II metallurgically bonded, double plug
construction in accordance with MIL-PRF-19500 and herein.
3.5 Diode construction. These devices shall be constructed in a manner and using materials which enable the
diodes to meet the applicable requirements of MIL-PRF-19500 and this document.
3.5.1 Surface mount. The U version shall be considered structurally identical to the non-U version except for lead
attach.
3.6 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6.1 Marking for UR devices. UR-suffix devices only, all marking (except for 3.6.2) may be omitted from the
body, but shall be retained on the initial container.
3.6.2 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end.
Alternatively, for UR suffix devices, a minimum of three contrasting color dots spaced around the periphery on the
cathode end may be used.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.8 Electrical test requirements. The electrical test requirements shall be specified in table I.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
6
MIL-PRF-19500/586F
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.2.1 JANHC and JANKC devices. Qualification for devices shall be in accordance with MIL-PRF-19500. This
testing may be performed on a TO-5 package in lieu of the DO-41 axial leaded package.
* 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this
revision to maintain qualification.
* 4.3 Screening (JAN, JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
table IV of
MIL-PRF-19500)
Measurement
JANS level
1a
1b
2
Required
Required
Not required
3a
3b
(1) 3c
Required
Not applicable
Required (see 4.3.3)
4, 5, 6 and 7a
Not applicable
Required
7b
8
Required
9
Required. IR1 and VF2
(2) 10
11
Required. T = +100 C; V
= 100 V(pk); 1N6761; T = +110 C; VRWM = 45 V(pk); 1N5819,
°
A
°
A
RWM
IO = 0, half sine wave, f = 60 Hz
Required. 100 percent of initial reading or .02 mA whichever is greater.
I
V
F2 ≤ ±
50 mV dc.
∆
≤
∆
R1
12
13
Required. See 4.3.2
Required. Subgroup 2 of table I herein;
I
100 percent of initial reading or .02 mA whichever
≤
∆
R1
is greater; V
50 mV dc.
F2 ≤ ±
14a
14b
15
Not applicable
Optional (3)
Required
16
Required
See notes at end of table.
7
MIL-PRF-19500/586F
4.3 Screening (JAN, JANTX, JANTXV, and JANS levels only) - Continued.
Screen (see
table IV of
Measurement
MIL-PRF-19500)
JANTXV and JANTX Level
Not required
JAN level
1a
1b
Not required
Not required
Required (JANTXV only)
2
Not required
Not required
3a
Required
Required in accordance with
MIL-PRF-19500, JANTX level
Not applicable
3b
Not applicable
(1) 3c
Required (see 4.3.3)
Required (see 4.3.3)
4, 5, 6 and 7a
Not applicable
Required
Not applicable
Not required
Not required
Not applicable
Not applicable
7b
8
9
Not required
Not applicable
Required
(2) 10
T = +100 C; VRWM = 100 V(pk); 1N6761;
°
A
T = +110 C; VRWM = 45 V(pk); 1N5819,
°
A
IO = 0, half sine wave, f = 60 Hz
Required, IR1 and VFM2
11
12
13
Not applicable
Not applicable
Not applicable
Required
See 4.3.2, t = 48 hours
Required
Subgroup 2 of table I herein;
I
100
≤
∆
R1
percent of initial reading or .02 mA
whichever is greater; V
50 mV dc.
F2 ≤ ±
14a
14b
Not applicable
Optional (3)
Not applicable
Not required
15 and 16
Not required
Not required
(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in
accordance with table IV of MIL-PRF-19500, screen 3 prior to this thermal test.
(2) Junction temperature (T ) is not to exceed 115 C at VRWM. TJ is affected by the device mounting thermal
°
J
resistance when parasitic power is generated by the temperature dependent leakage current. Until this
leakage becomes significant near thermal runaway, TJ remains approximately equal to TA or TJ for IO = 0.
(3) In accordance with MIL-PRF-19500.
8
MIL-PRF-19500/586F
4.3.1 Screening (JANHC or JANKC). Screening of die shall be in accordance with “Discrete Semiconductor
Die/Chip Lot Acceptance” appendix G of MIL-PRF-19500 and die shall be 100-percent probed in accordance with
table I, subgroup 2.
* 4.3.2 Burn-in conditions. Burn-in conditions are as follows: IF = 1.0 A dc (min), adjust IF, or TA to achieve TJ =
100 C min. Mounting and test conditions shall be in accordance with method 1038 of MIL-STD-750, test condition
°
B.
* 4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3101 of MIL-STD-750. The maximum screen limit shall be developed by the supplier using statistical
methods and it shall not to exceed the table I, subgroup 2 herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
* 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500,
and table I herein. The following test conditions shall be used for ZθJX, group A inspection and shall be in
accordance with method 3101 of MIL-STD-750:
a. IM measurement current
b. IH forward heating current
c. tH heating time
1 mA to 10 mA.
2.0 A.
10 ms.
d. tMD measurement delay time
70 s maximum.
µ
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS), and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical
measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
B3
Method
Condition
-55 C to 100 C, 25 cycles, n = 22, c = 0.
1056
1051
°
°
-55 C to 150 C, 25 cycles, n = 22, c = 0.
°
°
B3
4066
IFSM = 25 A(pk), condition A2, IO = 1.0 A; TA = room ambient as defined
in the general requirements of MIL-STD-750; 5 surges of 8.3 ms each
at 1 minute intervals.
B4
B5
B6
1036
1027
IF = 1.0 A; TA = room ambient as defined in the general requirements of
MIL-STD-750; ton = toff = 3 minutes minimum for 2,000 cycles.
IF = 1 A dc (minimum), adjust IF or TA to achieve TJ, see figures 4,
through 7.
Not applicable.
9
MIL-PRF-19500/586F
* 4.4.2.2 Group B inspection, table VIb (JAN, JANTX, and JANTXV of MIL-PRF-19500).
Subgroup
B2
Method
Condition
-55 C to 100 C, 10 cycles, n = 22, c = 0.
1056
1051
°
°
-55 C to 150 C, 25 cycles, n = 22, c = 0.
°
°
B2
4066
IFSM = 25 A(pk), condition A 2, IO = 1.0 A; TA = room ambient as defined
in the general requirements of MIL-STD-750 (see 4.5); 5 surges of 8.3
ms each at 1 minute intervals.
B3
B4
1027
2075
IF = 1 A dc (minimum), adjust IF or TA to achieve TJ see figures 4,
through 7.
In accordance with 4.5.2.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
the applicable inspections of table I, subgroup 2 herein.
* 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
C2
Method
2036
Condition
Tension: Test condition A; weight = 10 pounds; t = 15 s. Lead fatigue:
Test condition E; weight 1 pounds. NOTE: Both tension and lead
fatigue are not applicable for UR devices.
C5
3101
4081
See 4.4.5 herein.
C6
C7
1027
2031
IF = 1 A dc (minimum), adjust IF or TA to achieve TJ = +125 C minimum.
°
n = 22, c = 0.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with table IX of MIL-PRF-19500
and the conditions for subgroup testing in table II herein. Electrical measurements (end-points) shall be in
accordance with the applicable inspections of table I, subgroup 2 herein.
10
MIL-PRF-19500/586F
* 4.4.5 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101 or 4081 of
MIL-STD-750. Forced moving air or draft shall not be permitted across the device during test. The maximum limit
for RθJL under these test conditions shall be R (max) = 70 C/W, R
(max) = 40 C/W. The following conditions
°
°
JL
JEC
θ
θ
shall apply when using method 3101:
a. IM ..................1 mA to 10 mA.
b. IH
1.0 A.
................
c. tH ...................25 seconds minimum.
d. tMD ................70 s maximum.
µ
LS = lead spacing = .375 inch (9.53 mm) for non-surface mount devices and 0 inch for surface mount devices as
defined as follows:
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in 4.3.2.1 of MIL-STD-750.
4.5.2 Decap internal visual scribe and break (DPA). Scratch glass at cavity area with diamond scribe. Carefully
snap open. Using 30X magnification, examine the area where die or bond material was in contact with the plug and
verify metallurgical bonding area.
4.5.3 Steady-state operation life. This test shall be conducted with a half-sine wave of the specified peak voltage
impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average
rectified current. The forward conduction angle of the rectified current shall not be greater than 180 degrees nor less
than 150 degrees.
11
MIL-PRF-19500/586F
TABLE I. Group A inspection.
Inspection 1/
Subgroup 1
MIL-STD-750
Symbol
Limits
Unit
Method
2071
Conditions
Min
Max
Visual and mechanical
examination
Subgroup 2
Thermal impedance
Forward voltage
3101
4011
See 4.3.3
12
C/W
°
Zθ
JX
V
IF = .1 A (pk) pulsed (see 4.5.1)
VFM1
1N5819-1, 1N5819UR-1
1N6761-1, 1N6761UR-1
0.34
0.38
Forward voltage
4011
V
IF = 1.0 A (pk) pulsed (see 4.5.1)
VF2
1N5819-1, 1N5819UR-1
1N6761-1, 1N6761UR-1
0.49
0.69
Forward voltage
1N5819-1, 1N5819UR-1
4011
4016
0.80
V
IFM = 3.1 A (pk) pulsed (see 4.5.1)
Pulse method
VFM3
Reverse current leakage
mA
IRM1
1N5819-1, 1N5819UR-1
1N6761-1, 1N6761UR-1
0.05
0.10
VRM = 45 V (pk)
V
RM = 100 V (pk)
Subgroup 3
High temperature
operation:
TA = +100 C
°
Reverse current leakage
1N5819-1, 1N5819UR-1
1N5819-1, 1N5819UR-1
4016
Pulse method (see 4.5.1)
VRM = 45 V (pk)
5.0
4.5
mA
mA
IRM2
IRM3
VR = 40 V (pk)
1N5819-1, 1N5819UR-1
1N5819-1, 1N5819UR-1
1N5819-1, 1N5819UR-1
1N5819-1, 1N5819UR-1
1N6761-1, 1N6761UR-1
4.0
3.5
2.5
2.0
12.0
mA
mA
mA
mA
mA
VR = 35 V (pk)
VR = 24 V (pk)
VR = 12 V (pk)
VR = 6 V (pk)
IRM4
IRM5
IRM6
IRM7
IRM2
VRM = 100 V (pk)
1N6761-1, 1N6761UR-1
1N6761-1, 1N6761UR-1
1N6761-1, 1N6761UR-1
5.0
3.5
2.5
mA
mA
mA
VRM = 50 V (pk)
VRM = 25 V (pk)
VRM = 12 V (pk)
IRM3
IRM4
IRM5
See footnote at end of table.
12
MIL-PRF-19500/586F
TABLE I. Group A inspection. - Continued
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
4011
Conditions
Min
Max
Subgroup 3 - Continued
Forward voltage
Pulse method (see 4.5.1)
IF = 1.0 A (pk)
V
VF4
1N5819-1, 1N5819UR-1
1N6761-1, 1N6761UR-1
0.45
0.64
Low temperature
operation:
TA = -55 C
°
Reverse current leakage
4016
4011
Pulse method (see 4.5.1)
VRM = 45 V (pk)
mA
V
IR5
1N5819-1, 1N5819UR-1
1N6761-1, 1N6761UR-1
0.2
0.4
V
R = 90 V (pk)
Forward voltage
Pulse method (see 4.5.1)
IF = 1.0 A (pk)
VF5
1N5819-1, 1N5819UR-1
1N6761-1, 1N6761UR-1
0.65
0.80
Subgroup 4
Capacitance
4001
70
pF
VR = 5 V dc, .01
f
1 MHz,
≤
CT
≤
V
SIG = 15 mV p-p
1/ For sampling plan, see MIL-PRF-19500.
13
MIL-PRF-19500/586F
* TABLE II. Group E inspection (all quality levels) for qualification and re-qualification.
Inspection
MIL-STD-750
Sampling
plan
Method
Conditions
Subgroup 1
22 devices
c = 0
Thermal shock
1056
1051
500 cycles -55 C to 100 C
° °
Thermal shock (temperature
cycling)
500 cycles -55 C to 150 C
°
°
Hermetic seal
1071
Test condition E
Electrical measurement
Subgroup 2
See table I, subgroup 2
22 devices
c = 0
Steady-state reverse bias
1038
Test condition A; 1,000 hours, see 4.4.3.1.C6
herein.
Electrical measurement
Subgroup 3
See table I, subgroup 2
3 devices
c = 0
DPA
2101
Cross section and scribe and break
Subgroup 4
Thermal impedance curves
Each supplier shall submit their (typical) design
thermal impedance curves to the qualifying
activity. In addition, the optimal test conditions
and ZθJX limit shall be provided to the qualifying
activity in the qualification report.
Subgroup 5
Not applicable
Subgroup 6
3 devices
c =0
ESD
1020
Subgroup 7
45 devices
c =0
Soldering heat
2031
1057
Subgroup 8
45 devices
Resistance to glass cracking
Test condition B.
Test to destruction or 25 cycles max whichever
comes first.
14
MIL-PRF-19500/586F
Schottky Temperature-Current Derating Curve
Tc = 25°C 1N5819-1 Thermal Resistnace Junction to Lead 3/8" = 70.0°C/W
1.2
1
6V
12V
24V
35V
40V
45V
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Lead 3/8" Temperature (C)
* FIGURE 4. Derating for 1N5819-1 (DO-41).
Schottky Temperature-Current Derating Curve
Tc = 25°C 1N5819-UR1 Thermal Resistnace Junction to End Cap = 40.0°C/W
1.2
1
6V
12V
24V
35V
40V
45V
0.8
0.6
0.4
0.2
0
0
50
100
150
200
End Cap Temperature (C)
* FIGURE 5. Derating for 1N5819-UR1 (DO-213AB).
15
MIL-PRF-19500/586F
Schottky Temperature-Current Derating Curve
Tc = 25°C 1N6761-1 Thermal Resistnace Junction to Lead 3/8" = 70.0°C/W
1.2
1
12V
25V
50V
100V
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Lead 3/8" Temperature (C)
* FIGURE 6. Derating for 1N6761-1 (DO-41).
Schottky Temperature-Current Derating Curve
Tc = 25°C 1N6761-UR1 Thermal Resistnace Junction to End Cap = 40.0°C/W
1.2
1
12V
25V
50V
100V
0.8
0.6
0.4
0.2
0
0
50
100
150
200
End Cap Temperature (C)
* FIGURE 7. Derating for 1N6761-UR1 (DO-213AB).
16
MIL-PRF-19500/586F
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. The acquisition requirements are as specified in MIL-PRF-19500.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH, 43216-5000.
6.4 Suppliers of die. The qualified die suppliers with the applicable letter version (example JANHCA1N5819) will
be identified on the QML.
JANC ordering information
Manufacturer
PIN
43611
1N5819
1N6761
JANHCA1N5819, JANKCA1N5819
JANHCA1N6761, JANKCA1N6761
* 6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2719)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 99
17
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/586F
2. DOCUMENT DATE
17 October 2003
I RECOMMEND A CHANGE:
3.
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES
DOCUMENT TITLE
1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
FAX
EMAIL
850-0510
614-692-6939
alan_barone@dla.mil
c. ADDRESS
Defense Supply Center, Columbus
ATTN: DSCC-VAC,
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
P.O. Box 3990,
Columbus, OH 43216-5000
Previous editions are obsolete
WHS/DIOR, Feb 99
DD Form 1426, Feb 1999 (EG)
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