1N5223B [CDIL]

SILICON PLANAR ZENER DIODES; 硅平面齐纳二极管
1N5223B
型号: 1N5223B
厂家: Continental Device India Limited    Continental Device India Limited
描述:

SILICON PLANAR ZENER DIODES
硅平面齐纳二极管

二极管 齐纳二极管 局域网
文件: 总5页 (文件大小:142K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
SILICON PLANAR ZENER DIODES  
1N5223B to 1N5279B  
2.7V to 180V  
DO- 35  
Glass Axial Package  
FEATURES  
The zeners with glass passivated junction in the hermetically sealed glass package with double studs,  
provides excellent stability, reliability and better power dissipation.  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
VALUE  
500  
4.0  
DESCRIPTION  
DC Power Dissipation  
Power Derating above 75ºC  
UNIT  
mW  
mW/ºC  
PD  
Tstg  
- 65 to +200  
Operating and Storage Temperature  
ºC  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
Forward Voltage at IF=200mA V <1.1  
No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance  
V
F
Max Zener  
Impedance  
Max Reverse Leakage Current  
Device  
(Note 1)  
Nominal  
Voltage Current  
Test  
Max Zener  
Voltage  
IR at VR  
VZ at IZT  
IZT  
A & B Suffix only  
(Note 2)  
Temp. Coeff.  
qVz(Note 3)  
ZZT at  
IZT  
W
ZZK at  
IZK=0.25mA  
W
(A&B Suffix only)  
a VZ (% /ºC)  
-0.080  
V
V
mA  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
mA  
75  
75  
50  
25  
15  
10  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
3.0  
3.0  
3.0  
3.0  
3.0  
3.0  
2.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
2.0  
2.0  
3.0  
3.5  
4.0  
5.0  
6.0  
6.5  
6.5  
7.0  
8.0  
8.4  
9.1  
1N5223B  
1N5224B  
1N5225B  
1N5226B  
1N5227B  
1N5228B  
1N5229B  
1N5230B  
1N5231B  
1N5232B  
1N5233B  
1N5234B  
1N5235B  
1N5236B  
1N5237B  
1N5238B  
1N5239B  
1N5240B  
1N5241B  
1N5242B  
2.7  
2.8  
3.0  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.0  
6.2  
6.8  
7.5  
8.2  
8.7  
9.1  
10  
30  
30  
29  
28  
24  
23  
22  
19  
17  
11  
7
1300  
1400  
1600  
1600  
1700  
1900  
2000  
1900  
1600  
1600  
1600  
1000  
750  
500  
500  
600  
600  
600  
600  
600  
-0.080  
-0.075  
-0.070  
-0.065  
-0.060  
+/-0.055  
+/-0.030  
+/-0.030  
0.038  
0.038  
0.045  
0.050  
0.058  
0.062  
0.065  
7
5
6
8
8
10  
17  
22  
30  
0.068  
0.075  
0.076  
0.077  
11  
12  
1N5223B_5279B Rev_2 080605E  
Data Sheet  
Page 1 of 5  
Continental Device India Limited  
SILICON PLANAR ZENER DIODES  
1N5223B to 1N5279B  
2.7V to 180V  
DO- 35  
Glass Axial Package  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
Forward Voltage at IF=200mA  
V <1.1  
V
F
No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance  
Max Zener  
Impedance  
A & B Suffix only  
(Note 2)  
Max Reverse Leakage Current  
IR at VR  
Device  
(Note 1)  
Nominal  
Voltage Current  
VZ at IZT  
Test  
Max Zener  
Voltage  
Temp. Coeff.  
qVz(Note 3)  
IZT  
ZZT at  
IZT  
ZZK at  
IZK=0.25mA  
(A&B Suffix only)  
a VZ (% /ºC)  
0.079  
V
9.9  
10  
11  
12  
13  
14  
14  
15  
17  
18  
19  
21  
21  
23  
25  
27  
30  
33  
36  
39  
43  
46  
47  
52  
56  
62  
68  
mA  
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
mA  
9.5  
9.0  
8.5  
7.8  
7.4  
7.0  
6.6  
6.2  
5.6  
5.2  
5.0  
4.6  
4.5  
4.2  
3.8  
3.4  
3.2  
3.0  
2.7  
2.5  
2.2  
2.1  
2.0  
1.8  
1.7  
1.5  
1.4  
W
13  
15  
16  
17  
19  
21  
23  
25  
29  
33  
35  
41  
44  
49  
58  
70  
W
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
700  
1N5243B  
1N5244B  
1N5245B  
1N5246B  
1N5247B  
1N5248B  
1N5249B  
1N5250B  
1N5251B  
1N5252B  
1N5253B  
1N5254B  
1N5255B  
1N5256B  
1N5257B  
1N5258B  
1N5259B  
1N5260B  
1N5261B  
1N5262B  
1N5263B  
1N5264B  
1N5265B  
1N5266B  
1N5267B  
1N5268B  
1N5269B  
13  
14  
15  
16  
17  
18  
19  
20  
22  
24  
25  
27  
28  
30  
33  
36  
39  
43  
47  
51  
56  
60  
62  
68  
75  
82  
87  
0.082  
0.082  
0.083  
0.084  
0.085  
0.086  
0.086  
0.087  
0.088  
0.089  
0.090  
0.091  
0.091  
0.092  
0.093  
0.094  
0.095  
0.095  
0.096  
0.096  
0.097  
0.097  
0.097  
0.098  
700  
800  
900  
80  
93  
105  
125  
150  
170  
185  
230  
270  
330  
370  
1000  
1100  
1300  
1400  
1400  
1600  
1700  
2000  
2200  
0.098  
0.099  
1N5223B_5279B Rev_2 080605E  
Data Sheet  
Page 2 of 5  
Continental Device India Limited  
SILICON PLANAR ZENER DIODES  
1N5223B to 1N5279B  
2.7V to 180V  
DO- 35  
Glass Axial Package  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
Forward Voltage at IF=200mA  
V <1.1  
V
F
No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance  
Max Zener  
Impedance  
A & B Suffix only  
(Note 2)  
Max Reverse Leakage Current  
IR at VR  
Device  
(Note 1)  
Nominal  
Voltage Current  
VZ @ IZT  
Test  
Max Zener  
Voltage  
Temp. Coeff.  
qVz(Note 3)  
IZT  
ZZT  
@
ZZK @  
IZT  
IZK=0.25mA  
(A&B Suffix only)  
V
69  
76  
84  
91  
99  
106  
114  
122  
129  
137  
mA  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
a VZ (% /ºC)  
0.099  
0.099  
0.11  
V
91  
mA  
1.4  
1.3  
1.1  
1.0  
0.95  
0.90  
0.85  
0.80  
0.74  
0.68  
W
400  
500  
750  
W
1N5270B  
1N5271B  
1N5272B  
1N5273B  
1N5274B  
1N5275B  
1N5276B  
1N5277B  
1N5278B  
1N5279B  
2300  
2600  
3000  
4000  
4500  
4500  
5000  
5500  
5500  
6000  
100  
110  
120  
130  
140  
150  
160  
170  
180  
900  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
1100  
1300  
1500  
1700  
1900  
2200  
NOTE 1:  
NOTE 2:  
The electrical characteristics are measured after allowing the device to stabilize for  
20 seconds when mounted with a 9.525 mm (3/8") minimum lead length from the case.  
The zener impedance is derived from the 50 Hz AC voltage, which results when AC current  
having an RMS value equal to 10% of the DC zener current (IZT or IZK) is superimposed  
on IZT or IZK Zener impedance is measured at two points to insure a sharp knee on the  
breakdown curve, thereby, eliminating unstable units.  
Temperature coefficient (qVz).  
NOTE 3:  
Test conditions for temperature coefficient are as follows.  
I =7.5mA, T =25ºC  
a.  
ZT  
j
T2=125ºC(1N5223A, B thru 1N5242A, B )  
I =Rated I , T =25ºC  
b.  
ZT  
ZT  
J
T2=125ºC(1N5243A, B thru 1N5279A, B )  
Device to be temperature stabilized with current applied prior to reading brekdown voltage  
at the specified ambient Rwmerature  
1N5223B_5279B Rev_2 080605E  
Data Sheet  
Page 3 of 5  
Continental Device India Limited  
1N5223B to 1N5279B  
2.7V to 180V  
DO- 35  
Glass Axial Package  
DO-35 Glass Axial Package  
DO-35, 52mm Taping Specification  
52mm Taping Specification  
on request also available in 26 mm Tape and Ammo Pack  
Packing Detail  
STANDARD PACK  
Details Net Weight/Qty  
5K/ammo box 0.88kg/5K pcs  
INNER CARTON BOX  
OUTER CARTON BOX  
PACKAGE  
DO-35 T&A  
Size  
Qty Size  
Qty  
Qty  
10"X3.5"X3.5"  
5.0K 12.7"X12.7"X20" 125.0K 25Kgs  
Data Sheet  
Page 4 of 5  
Continental Device India Limited  
Customer Notes  
1N5223B to 1N5279B  
2.7V to 180V  
DO- 35  
Glass Axial Package  
Disclaimer  
The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best  
suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data  
Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished in  
the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume  
responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out  
of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others.  
These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products  
(either as individual Semiconductor Devices or incorporated in their end products), in any life  
ing/support  
appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from  
such sale(s).  
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior  
notice.  
CDIL is a registered Trademark of  
Continental Device India Limited  
C-120 Naraina Industrial Area, New Delhi 110 028, India.  
Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119  
email@cdil.com  
www.cdilsemi.com  
1N5223B_5279B Rev_2 080605E  
Data Sheet  
Page 5 of 5  
Continental Device India Limited  

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