CSC2688R [CDIL]
NPN SILICON EPITAXIAL POWER TRANSISTOR; NPN硅外延功率晶体管
| 型号： | CSC2688R |
| 厂家： | 
Continental Device India Limited |
| 描述： | NPN SILICON EPITAXIAL POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTOR
CSC2688
TO-126
E
C
B
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
PC
PC
Tj
Tstg
VALUE
300
300
5
200
1.25
10
150
-55 to +150
UNIT
V
V
V
mA
W
W
deg C
deg C
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Power Dissipation @ Ta=25 deg C
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL
VCEO
VCBO
VEBO
ICBO
TEST CONDITION
IC=5mA, IB=0
IC=0.1mA, IE=0
IE=0.1mA,IC=0
VCB=200V, IE=0
VEB=4V,IC=0
MIN
300
300
5
-
-
MAX
-
-
UNIT
V
V
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
DC Current Gain
-
V
0.1
0.1
1.5
250
uA
uA
V
IEBO
VCE(Sat)* IC=50mA,IB=5mA
hFE*
-
40
IC=10mA, VCE=10V
Dynamic Characteristics
Transition Frequency
Feed Back Capacitance
ft
Cre
VCE=30V,IC=10mA,
VCB=30V, IE=0
f=1MHz
50
-
-
3
MHz
pF
*hFE Classification
R: 40-80
O : 60-120
Y :100-200
G :160-250
*PULSE TEST:PW=350uS, Duty Cycle=2%
Continental Device India Limited
Page 1 of 2
Data Sheet
TO-126 (SOT-32) Plastic Package
A
C
N
P
B
DIM
M IN.
7.4
M AX.
1
2
3
A
B
C
D
E
F
7.8
10.8
2.7
S
10.5
PIN CO NFIG URATIO N
1. EMITTER
2. COLLECTOR
2.4
0.7
0.9
3. BASE
L
2.25 TYP.
1
0.49
0.75
2
3
G
L
4.5 TYP.
15.7 TYP.
1.27 TYP.
3.75 TYP.
D
M
N
P
S
3.0
3.2
E
M
2.5 TYP.
F
G
Packing Detail
PACKAGE
STANDARD PACK
INNER CARTON BOX
OUTER CARTON BOX
Details
Net Weight/Qty
Size
Qty
Size
17" x 15" x 13.5"
Qty
Gr Wt
TO-126
500 pcs/polybag 340 gm/500 pcs 3" x 7.5" x 7.5"
2.0K
32.0K
31 kgs
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web
Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Page 2 of 2
Data Sheet
相关型号：
CSC2712BL(L)
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CDIL
©2020 ICPDF网 联系我们和版权申明