CSC3968B [CDIL]
NPN PLASTIC POWER TRANSISTOR; 塑料NPN功率晶体管
| 型号： | CSC3968B |
| 厂家： | 
Continental Device India Limited |
| 描述： | NPN PLASTIC POWER TRANSISTOR |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
CSC3968
CSC3968 NPN PLASTIC POWER TRANSISTOR
High Voltage Switching Applications
PIN CONFIGURATION
1. BASE
4
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
C
E
DIM
MIN.
MAX.
B
F
A
B
C
D
E
14.42
9.63
3.56
16.51
10.67
4.83
0.90
1.40
3.88
2.79
3.43
0.56
14.73
4.07
2.92
31.24
1.15
3.75
2.29
2.54
1
2
3
F
G
H
J
K
L
M
N
O
12.70
2.80
2.03
J
D
G
M
DEG 7
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (D.C.)
Total power dissipation up to T = 25°C
C
Junction temperature
V
V
max.
400 V
400 V
2.0 A
20 W
CBO
max.
max.
max.
max.
CEO
I
C
P
tot
T
j
150 °C
Collector-emitter saturation voltage
I
C
= 1A; I = 0.2A
V
CEsat
max.
1.0 V
B
D.C. current gain
= 0.1A; V
I
= 5V
h
FE
min.
max.
16
50
C
CE
RATINGS (at T =25°C unless otherwise specified)
A
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
V
V
V
max.
max.
max.
max.
max.
400 V
400 V
7.0 V
2.0 A
4.0 A
CBO
CEO
EBO
I
I
C
Collector current (Pulse) (1)
C
Continental Device India Limited
Data Sheet
Page 1 of 3
CSC3968
Total power dissipation up to T = 25°C
P
P
max.
max.
max.
20 W
1.5 W
150 ºC
C
tot
tot
Total power dissipation up to T = 25°C
A
Junction temperature
Storage temperature
T
j
T
–65 to +150 ºC
stg
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
= 0; V = 400V
I
I
CBO
max.
max.
10 µA
10 µA
E
CB
Emitter cut-off current
= 0; V = 7V
I
I
EBO
C
EB
Breakdown voltages
= 1 mA; I = 0
I
C
V
V
V
min.
min.
min.
400 V
400 V
7.0 V
B
CEO
CBO
EBO
I
C
= 50 µA; I = 0
E
I
E
= 50 µA; I = 0
C
Saturation voltages
= 1 A; I = 0.2 A
I
C
V
V
*
*
max.
max.
1.0 V
1.5 V
B
CEsat
BEsat
D.C. current gain
= 0.1A; V = 5V**
I
C
h
FE
min.
max.
16
50
CE
Output capacitance at f = 1 MHz
= 0; V = 10V
I
C
o
typ.
typ.
30 pF
E
CB
Transition frequency
= 0.5A; V = 10V; f = 5 MHz
I
f *
T
10 MHz
C
CE
Switching time
= 0.8A; R = 250Ω
I
C
L
I
B1
= –I = 0.08A
B2
V
CC
= 200V
Turn on time
Storage time
Fall time
t
t
t
max.
max.
max.
1.0 µs
2.5 µs
1.0 µs
on
s
f
(1) Single Pulse Pw = 10 ms
* Pulse test
** h
classification: A: 16-34 B: 25-50
FE
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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