NE25139T2U71 [CEL]

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET;
NE25139T2U71
型号: NE25139T2U71
厂家: CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述:

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

放大器 光电二极管 晶体管
文件: 总5页 (文件大小:155K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

NE25139T2U73

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
CEL

NE25139U71

GENERAL PURPOSE DUAL-GATE GaAS MESFET
NEC

NE25139U71

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN
CEL

NE25139U72

GENERAL PURPOSE DUAL-GATE GaAS MESFET
NEC

NE25139U72

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN
CEL

NE25139U73

GENERAL PURPOSE DUAL-GATE GaAS MESFET
NEC

NE25139U73

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN
CEL

NE25139U74

GENERAL PURPOSE DUAL-GATE GaAS MESFET
NEC

NE25139U74

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN
CEL

NE25337

GENERAL PURPOSE DUAL-GATE GaAs MESFET
NEC

NE25337-L

RF SMALL SIGNAL, FET
RENESAS

NE25337-N

RF SMALL SIGNAL, FET
RENESAS