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NE321000_01 [CEL]

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET; 超低噪声赝HJ FET
NE321000_01
元器件型号： NE321000_01
生产厂家： CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述和应用：

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
超低噪声赝HJ FET
PDF文件： 总6页 (文件大小：136K)
下载文档：  下载PDF数据表文档文件
型号参数：NE321000_01参数
 查看货源

NE321000-A

 暂无描述

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0 NEC

NE3210S01

 SUPER LOW NOISE HJ FET

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197 CEL

NE3210S01

 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

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958 NEC

NE3210S01-T1

 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

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100 NEC

NE3210S01-T1

 SUPER LOW NOISE HJ FET

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59 CEL

NE3210S01-T1-A

 TRANSISTOR,HEMT,N-CHAN,4V V(BR)DSS,15MA I(DSS),SOT-173X

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1 RENESAS

NE3210S01-T1B

 SUPER LOW NOISE HJ FET

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90 CEL

NE3210S01-T1B

 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

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192 NEC

NE32183A

 TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 12MA I(DSS) | MICRO-X

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44 ETC

NE32184A

 TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 12MA I(DSS) | MACRO-X

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26 ETC

NE32400

 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

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114 NEC

NE32400

 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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31 NEC

NE32400

 RF Small Signal Field-Effect Transistor, 2-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-3

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0 NEC

NE32400_98

 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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20 NEC

NE32400M

 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-3

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0 NEC
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