NE5500179A [CEL]
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS; 4.8 V工作电压硅射频功率MOSFET用于GSM1800和GSM1900发送放大器
| 型号： | NE5500179A |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | 4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS |
| 文件： | 总5页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4.8 V OPERATION SILICON RF
POWER MOSFET FOR GSM1800 AND
GSM1900 TRANSMISSION AMPLIFIERS
NE5500179A
FEATURES
OUTLINE DIMENSIONS (Units in mm)
• HIGH OUTPUT POWER:
29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA,
f = 1.9 GHz, PIN = 20 dBm
• HIGH POWER ADDED EFFICIENCY:
55% TYP at VDS = 4.8 V, IDQ = 100 mA,
f = 1.9 GHz, PIN = 20 dBm
PACKAGE OUTLINE 79A
1.5 ± 0.2
4.2 Max
Source
Source
Drain
Drain
Gate
Gate
• HIGH LINEAR GAIN:
14 dB TYP at VDS = 4.8 V, IDQ = 100 mA,
f = 1.9 GHz, PIN = 0 dBm
• SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
0.4 ± 0.15
5.7 Max
0.8 Max
3.6 ± 0.2
• SINGLE SUPPLY:
3.0 to 6.0 V
Bottom View
DESCRIPTION
The NE5500179A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
4.8 V GSM1800 and GSM1900 handsets. Dies are manufac-
tured using NEC's NEWMOS technology (NEC's 0.6 µm WSi
gate lateral MOSFET) and housed in a surface mount pack-
age. This device can deliver 29.5 dBm output power with
55% power added efficiency at 1.9 GHz under the 4.8 V sup-
ply voltage, or can deliver 27 dBm output power with 50%
power added efficiency at 3.5 V by varying the gate voltage
as a power control function.
APPLICATIONS
•
•
•
DIGITAL CELLULAR PHONES
DIGITAL CORDLESS PHONES
OTHERS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
NE5500179A
79A
PACKAGE OUTLINE
SYMBOLS
IGSS
CHARACTERISTICS
Gate to Source Leakage Current
Drain to Source Leakage Current
Gate Threshold Voltage
UNITS
MIN
TYP
-
MAX
100
100
2.0
-
TEST CONDITIONS
nA
nA
V
-
-
VGSS = 6.0 V
VDSS = 8.5 V
IDSS
-
VTH
1.0
-
1.35
0.41
1.00
24
VDS = 4.8 V, IDS = 1 mA
gm
Transconductance
S
VDS = 4.8 V, IDS1 = 150 mA, IDS2 = 250 mA
VGS = 6.0 V, VDS = 0.5 V
IDSS = 10 A
RDS(ON)
BVDSS
Drain to Source On Resistance
Drain to Source Breakdown Voltage
-
-
-
V
20
-
California Eastern Laboratories
NE5500179A
PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C)
SYMBOLS
CHARACTERISTICS
UNITS
MIN
TYP
MAX
TEST CONDITIONS
f = 1.9 GHz, PIN = 0 dBm,
VDS = 3.0 V, IDQ = 100 mA
f = 1.9 GHz, PIN = 15 dBm,
VDS = 3.0 V, IDQ = 100 mA
GL
Linear Gain
dB
—
13.0
—
POUT
IOP
Output Power
dBm
mA
%
—
—
—
—
24.5
170
50
—
—
Operating Current
Power Added Efficiency
Linear Gain
ηADD
GL
dB
13.5
—
f = 1.9 GHz, PIN = 0 dBm,
VDS = 3.5 V, IDQ = 100 mA
f = 1.9 GHz, PIN = 18 dBm,
VDS = 3.5 V, IDQ = 100 mA
POUT(1)
IOP(1)
ηADD
POUT(2)
IOP(2)
GL
Output Power
dBm
mA
%
—
—
—
—
—
—
26.5
210
52
—
—
Operating Current
Power Added Efficiency
Maximum Output Power
Operating Current
Linear Gain
dBm
mA
dB
27.0
260
14.0
—
—
—
f = 1.9 GHz, PIN = 18 dBm
VDS = 3.5 V, VGS = 2.5 V
f = 1.9 GHz, PIN = 0 dBm,
VDS = 4.8 V, IDQ = 100 mA
f = 1.9 GHz, PIN = 20 dBm,
VDS = 4.8 V, IDQ = 100 mA
POUT(1)
IOP(1)
ηADD
POUT(2)
IOP(2)
GL
Output Power
dBm
mA
%
28.5
—
29.5
300
55
—
—
—
—
—
—
Operating Current
Power Added Efficiency
Maximum Output Power
Operating Current
Linear Gain
47
—
dBm
mA
dB
30.0
350
14.5
f = 1.9 GHz, PIN = 20 dBm
VDS = 4.8 V, VGS = 2.5 V
f = 1.9 GHz, PIN = 0 dBm,
VDS =6.0 V, IDQ = 100 mA
f = 1.9 GHz, PIN = 22 dBm,
VDS =6.0 V, IDQ = 100 mA
—
—
POUT
IOP
Output Power
dBm
mA
%
—
—
—
31.5
380
55
—
—
—
Operating Current
Power Added Efficiency
ηADD
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
ORDERING INFORMATION1
PART NUMBER
QTY
SYMBOLS
VDS
VGS
ID
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current
UNITS
RATINGS
V
8.5
NE5500179A-T1
Note:
1. Embossed tape 12 mm wide. Gate pin faces perforation side of
the tape.
1 Kpcs/Reel
V
6
0.25
A
ID
Drain Current (Pulse Test)2
Input Power3
A
0.5
PIN
dBm
W
25
PT
Total Power Dissipation
Channel Temperature
Storage Temperature
1.6
TCH
TSTG
°C
°C
125
-55 to +125
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, TON = LMS.
3. Frequency = 1.9 GHz, VDS = 4.8 V.
RECOMMENDED OPERATING CONDITIONS
SYMBOLS
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current (Pulse Test)
Input Power
TEST CONDITIONS
UNITS
V
MIN
3.0
0
TYP
3.5
2.0
—
MAX
6.0
2.5
0.5
23
VDS
VGS
ID
V
Duty Cycle 50%, Ton1ms
A
—
PIN
f
Frequency = 1.9 GHz, VDS = 4.8 V
dBm
GHz
˚C
21
22
Operating Frequency Range
Operating Temperature
1.6
-30
—
2.5
85
TOP
25
NE5500179A
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
QUIESCENT DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
3.0
1000
100
10
V
GS MAX = 10 V
V
DS = 4.8 V
Step = 1.0 V
2.5
2.0
1.5
1.0
0.5
1
0.1
0.0
1.5
3.0
2.5
0
2
4
6
8
10
12
14
16
1.0
2.0
Gate to Source Voltage, VGS (V)
Drain to Source Voltage, VDS (V)
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY AND POWER ADDED
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY
AND POWER ADDED EFFICIENCY vs.
GATE TO SOURCE VOLTAGE
500
35
500
31
V
DS = 4.8 V
f = 1.9 GHz
IN = 20 dBm
V
I
DS = 4.8 V
DQ = 100 mA
f = 1.9 GHz
P
MAX = 30.1 dBm
P
PO = 29.8 dBm
400
300
200
400
300
30
25
30
29
P
OUT
P
OUT
I
DS
I
D
20
15
200
100
50
28
27
100
50
η
η
η
100
0
100
0
ADD
η
ADD
APC
10
0
26
0
25
0
5
10
15
20
0.0
1.0
2.0
3.0
4.0
Input Power, PIN (dBm)
Gate to Source Voltage, VGS (V)
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY
AND POWER ADDED EFFICIENCY vs.
GATE TO SOURCE VOLTAGE
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY AND POWER ADDED
EFFICIENCY vs. INPUT POWER
500
28
27
26
25
500
30
V
DS = 3.5 V
f = 1.9 GHz
IN = 18 dBm
V
DS = 3.5 V
P
MAX = 27.2 dBm
PO = 26.8 dBm
I
DQ = 100 mA
P
f = 1.9 GHz
400
400
300
200
25
20
P
OUT
P
OUT
300
200
I
DS
I
D
100
50
0
15
10
5
100
50
η
η
24
23
100
0
100
0
η
ADD
η
ADD
APC
0
3.0
0.0
1.0
2.0
4.0
5
0
10
15
20
25
Gate to Source Voltage, VGS (V)
Input Power, PIN (dBm)
NE5500179A
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE5500179A
VDS = 4.8 V, IDS = 100 mA
FREQUENCY
S11
S21
S12
S22
K
MAG1
(dB)
GHz
MAG
ANG
MAG
18.11
ANG
MAG
ANG
MAG
ANG
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
0.884
0.792
0.757
0.747
0.746
0.751
0.756
0.772
0.777
0.785
0.796
0.804
0.814
0.820
0.827
0.832
0.833
0.846
0.843
0.850
0.851
0.854
0.861
0.857
0.870
0.870
0.867
0.870
0.873
0.882
-69.6
-107.8
-127.4
-138.7
-146.2
-151.8
-155.6
-159.5
-162.3
-165.0
-167.7
-169.9
-172.4
-174.6
-176.8
-179.6
177.9
175.6
172.9
170.3
167.1
165.1
162.3
159.5
156.6
153.9
151.6
148.9
146.5
143.9
135.5
112.3
98.8
89.4
82.1
76.2
70.9
65.9
61.3
58.2
53.7
51.4
46.4
44.3
39.7
38.4
34.6
31.6
28.3
27.1
23.3
21.4
16.9
15.5
13.8
12.0
9.0
0.037
0.049
0.052
0.052
0.052
0.050
0.048
0.048
0.045
0.043
0.040
0.038
0.036
0.035
0.035
0.031
0.030
0.028
0.025
0.024
0.021
0.019
0.017
0.017
0.015
0.016
0.010
0.010
0.007
0.008
48.2
23.2
10.8
3.3
-4.1
0.517
0.569
0.598
0.618
0.641
0.660
0.681
0.696
0.715
0.732
0.749
0.763
0.776
0.789
0.803
0.808
0.814
0.829
0.834
0.840
0.842
0.847
0.856
0.866
0.862
0.865
0.866
0.879
0.879
0.885
-85.0
0.00
0.06
0.08
0.11
0.13
0.18
0.22
0.23
0.28
0.33
0.35
0.42
0.45
0.48
0.44
0.62
0.78
0.70
0.98
0.97
1.42
1.62
1.88
1.68
2.20
2.13
4.44
3.96
6.01
4.60
26.8
23.9
22.1
21.0
20.1
19.3
18.8
18.1
17.9
17.4
17.2
17.0
16.8
16.5
16.1
16.3
16.0
16.1
16.0
16.1
12.4
11.7
10.9
11.5
10.2
10.1
7.8
12.12
8.58
6.58
5.28
4.32
3.68
3.12
2.75
2.40
2.17
1.91
1.74
1.58
1.45
1.33
1.19
1.13
1.02
0.99
0.89
0.83
0.75
0.76
0.67
0.65
0.56
0.57
0.52
0.51
-120.7
-136.5
-144.8
-149.8
-153.4
-156.2
-158.9
-161.0
-162.9
-164.9
-166.9
-169.1
-171.0
-172.7
-175.0
-176.7
-179.2
178.7
176.5
174.4
172.1
169.1
167.0
164.7
162.0
159.1
156.7
154.5
152.0
-8.9
-12.6
-17.0
-22.1
-21.9
-26.9
-29.2
-30.5
-31.4
-36.6
-38.5
-38.3
-38.7
-38.1
-40.9
-42.9
-48.0
-43.6
-40.8
-49.0
-36.8
-33.0
-43.4
-18.3
-15.0
3.9
4.7
2.7
8.6
7.6
8.2
Note:
1. Gain Calculation:
2
1 + | ∆ |2 - |S11
|
2 - |S22
|
|S21
|S12
|
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11 S22 - S21 S12
|S21
|S12
|
|
(
K –
MAG =
MSG =
, K =
,
2 |S12
S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE5500179A
RECOMMENDED P.C.B. LAYOUT (Units in mm)
4.0
1.7
Drain
Gate
Source
Through hole φ 0.2 × 33
0.5
0.5
6.1
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
07/05/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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