NE900200G [CEL]
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET;
| 型号： | NE900200G |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 放大器 晶体管 |
| 文件： | 总5页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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