NX6353EP33-AZ [CEL]
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION;
| 型号： | NX6353EP33-AZ |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION 光电 半导体 |
| 文件： | 总6页 (文件大小：714K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Business Partner of Renesas Electronics Corporation.
reliminary
NX6353EP Series
Data Sheet
LASER DIODE
R08DS0089EJ0100
Rev.1.00
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
Feb 25, 2013
DESCRIPTION
The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple
Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD.
APPLICATIONS
•
•
9.8 Gbps CPRI
10G Ethernet
FEATURES
•
•
•
•
•
•
•
Optical output power
Low threshold current
Differential efficiency
Wide operating temperature range
InGaAs monitor PIN-PD
CAN package
PO = 8.5 mW
Ith = 7 mA
ηd = 0.35 W/A
TC = −40 to +85°C
φ 5.6 mm
6.2 mm
Focal point
R08DS0089EJ0100 Rev.1.00
Feb 25, 2013
Page 1 of 5
A Business Partner of Renesas Electronics Corporation.
NX6353EP Series
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
*2
φ
( 5.6)
*2
φ
( ꢀ.2)
*2
φ
( 3.55)
1.0 0.1
BOTTOM VIEW
1
ꢀ
2
(0.3)*2
3
Focal Point*1
Δ
Δ
x = 200
y = 200
μ
μ
ꢁ ꢂMA.
ꢁ ꢂMA.
φ
2.0
PIN CONNECTIONS
1
LD
ꢀ
2
Reference
Plane
3
PD
φ
ꢀ– 0.ꢀ5
φ
2.0
*1 Focal Point: M point to get ꢁaxiꢁuꢁ optical output power froꢁ fiber.
.
*2 ( ) indicates noꢁinal diꢁension
R08DS0089EJ0100 Rev.1.00
Feb 25, 2013
Page 2 of 5
A Business Partner of Renesas Electronics Corporation.
NX6353EP Series
Chapter Title
ORDERING INFORMATION
Part Number
NX6353EPxx∗ -AZ
Package
4-pin CAN with ball lens cap
Pin Connections
1
1
LD
ꢀ
2
3
PD
Note: 1. The last two digits (“xx”) of Part Number indicates Wavelength Code.
The relationships between the code and wavelength are as follows.
WAVELENGTH CODE
WAVELENGTH (nm)
27
29
31
33
35
1 270
1 290
1 310
1 330
1 350
Remarks 1. The color of lens cap might be observed differently.
2. The hermetic test will be performed as AQL 1.0%.
R08DS0089EJ0100 Rev.1.00
Feb 25, 2013
Page 3 of 5
A Business Partner of Renesas Electronics Corporation.
NX6353EP Series
Chapter Title
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Optical Output Power
Symbol
PO
Ratings
15
Unit
mW
mA
V
Forward Current of LD
IF
120
Reverse Voltage of LD
VR
2.0
Forward Current of PD
IF
10.0
mA
V
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
VR
15
TC
−40 to +85
−40 to +95
350 (3 sec.)
85
°C
°C
°C
%
Tstg
Tsld
RH
Lead Soldering Temperature
Relative Humidity (noncondensing)
RECOMMENDED LD DRIVE CURRENT AT MODULE LEVEL
Parameter
Bias Current
Symbol
Conditions
TC = 25°C
TC = 85°C
MIN.
TYP.
30
MAX.
−
Unit
Ibias
−
−
mA
−
70
ELECTRO-OPTICAL CHARACTERISTICS
(TC = −40 to +85°C, CW, BOL, unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Gb/s
mW
V
Signaling Rate
−
9.8304
−
−
2.0
15
Optical Output Power
Operating Voltage
Threshold Current
PO
Vop
Ith
−
−
−
8.5
−
PO = 8.5 mW
TC = 25°C
7
mA
−
−
30
Differential Efficiency
ηd
λp
PO = 8.5 mW, TC = 25°C
PO = 8.5 mW
0.23
0.13
1 260
1 280
1 300
1 320
1 340
35
−
−
−
−
−
−
−
−
W/A
nm
Peak Emission Wavelength
PO = 8.5 mW NX6353EP27
NX6353EP29
1 280
1 300
1 320
1 340
1 360
−
NX6353EP31
NX6353EP33
NX6353EP35
Side Mode Suppression Ratio
Rise Time
SMSR
PO = 8.5 mW
−
−
−
−
−
−
−
dB
ps
1
tr
tf
20-80% ∗
80-20% ∗
−
−
100
−
−
50
1
Fall Time
50
ps
Monitor Current
Monitor Dark Current
Im
ID
VR = 1.5 V, PO = 8.5 mW
VR = 3.3 V, TC = 25°C
VR = 3.3 V
1 000
10
μA
nA
100
20
Monitor PD Terminal
Capacitance
Ct
VR = 3.3 V, f = 1 MHz
−
pF
Note: 1. 9.8304 Gb/s, PRBS 231 − 1, NRZ, Duty Cycle = 50%
R08DS0089EJ0100 Rev.1.00
Feb 25, 2013
Page 4 of 5
A Business Partner of Renesas Electronics Corporation.
NX6353EP Series
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
SEMICONDUCTOR LASER
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
OUTPUT POWER
WAVELENGTH
mW MAX
nm
CLASS lllb LASER PRODUCT
A laser beam is emitted from this diode during operation.
Warning Laser Beam
Caution GaAs Products
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0089EJ0100 Rev.1.00
Feb 25, 2013
Page 5 of 5
Revision History
NX6353EP Series Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Feb 25, 2013
−
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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