NX8350TS [CEL]

LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION;
NX8350TS
型号: NX8350TS
厂家: CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述:

LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

文件: 总8页 (文件大小:276K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary  
NX8350TS  
LASER DIODE  
Data Sheet  
R08DS0025EJ0100  
Rev.1.00  
Sep 19, 2010  
1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION  
DESCRIPTION  
The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser  
diode TOSAs (transmitter optical subassembly) with InGaAs monitor PIN-PD in an LC receptacle type package  
designed for CFP transceiver.  
FEATURES  
Internal optical isolator  
Peak emission wavelength  
Optical output power  
1 271/1 291/1 311/1 331 nm  
Pf = 2 dBm  
Ith = 8 mA TYP. @ TC = 25C  
TC = 5 to +85C  
Low threshold current  
Wide operating temperature range  
InGaAs monitor PIN-PD  
IEEE802.3ba compliant  
APPLICATIONS  
40 G BASE-LR4  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 1 of 7  
NX8350TS  
Chapter Title  
PACKAGE DIMENSIONS (UNIT: mm)  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 2 of 7  
NX8350TS  
Chapter Title  
ORDERING INFORMATION  
Part Number  
Receptacle Type  
Note  
NX8350TSxx LC, Electrically isolated  
Differential input with short length flexible PCB, without matching  
resistor. xx is wavelength code.  
“27” means 1 271 nm.  
“29” means 1 291 nm.  
“31” means 1 311 nm.  
“33” means 1 331 nm.  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 3 of 7  
NX8350TS  
Chapter Title  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Storage Temperature  
Operating Case Temperature  
Forward Current of LD  
Reverse Voltage of LD  
Forward Current of PD  
Reverse Voltage of PD  
Symbol  
Tstg  
Ratings  
40 to +95  
5 to +85  
150  
Unit  
C  
C  
mA  
V
TC  
IFLD  
VRLD  
IFPD  
2
10  
mA  
V
VRPD  
Tsld  
15  
Soldering Temperature  
(Flexible Printed Circuit)  
260 (10 sec.)  
C  
Optical Output Power  
Pf  
10  
mW  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 4 of 7  
NX8350TS  
Chapter Title  
ELECTRO-OPTICAL CHARACTERISTICS  
(TC = 5 to +85C, BOL, unless otherwise specified)  
Parameter  
Symbol  
Conditions  
CW, Pf = 2 dBm  
MIN.  
TYP.  
MAX.  
Unit  
dBm  
nm  
Mean Optical Output Power  
Peak Emission Wavelength  
Pf  
2
p  
1 264.5  
1 284.5  
1 304.5  
1 324.5  
30  
1 277.5  
1 297.5  
1 317.5  
1 337.5  
Side Mode Suppression Ratio  
Operating Current  
SMSR  
Iop  
CW, Pf = 2 dBm  
Pf = 2 dBm  
dB  
mA  
mA  
70  
15  
Threshold Current  
Ith  
CW, TC = 25C  
8
CW  
2
30  
Differential Efficiency  
d  
CW, Pf = 2 dBm, TC = 25C  
CW, Pf = 2 dBm  
CW, Pf = 2 dBm  
CW, Pf = 2 dBm  
VR = 3.3 V, TC = 25C  
VR = 3.3 V, TC = 85C  
VR = 3.3 V, f = 1 MHz  
0.055  
0.03  
0.069  
0.085  
0.1  
2.0  
500  
10  
W/A  
Operation Voltage  
Monitor Current  
Vop  
Im  
V
50  
A  
nA  
Monitor Dark Current  
ID  
100  
20  
Monitor PD Terminal  
Capacitance  
Ct  
pF  
Rise Time  
tr  
tf  
20-80%  
*1  
*1  
35  
42  
50  
50  
ps  
ps  
Fall Time  
20-80%  
Relative Intensity Noise  
RIN  
BR = 20 dB, IEEE802.3ba  
128  
1.0  
dB/Hz  
dB  
Tracking Error  
1.0  
Note: *1. 10.3125 Gb/s, PRBS 2311, NRZ, Duty Cycle = 50%, Renesas Electronics Setup.  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 5 of 7  
NX8350TS  
Chapter Title  
REFERENCE  
Document Name  
Opto-Electronics Devices Pamphlet*1  
Document No.  
PX10160E  
Note: *1. Published by the former NEC Electronics Corporation.  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 6 of 7  
NX8350TS  
Chapter Title  
SAFETY INFORMATION ON THIS PRODUCT  
A laser beam is emitted from this diode during operation.  
Warning Laser Beam  
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of  
eyesight.  
Do not look directly into the laser beam.  
Avoid exposure to the laser beam, any reflected or collimated beam.  
This product uses gallium arsenide (GaAs).  
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe  
the following points.  
Caution GaAs Products  
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws  
and/or ordinances, dispose of the product as recommended below.  
1. Commission a disposal company able to (with a license to) collect, transport and dispose of  
materials that contain arsenic and other such industrial waste materials.  
2. Exclude the product from general industrial waste and household garbage, and ensure that the  
product is controlled (as industrial waste subject to special control) up until final disposal.  
• Do not burn, destroy, cut, crush, or chemically dissolve the product.  
• Do not lick the product or in any way allow it to enter the mouth.  
A glass-fiber is attached on the product. Handle with care.  
Caution Optical Fiber  
When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part  
or fragments.  
R08DS0025EJ0100 Rev.1.00  
Sep 19, 2010  
Page 7 of 7  
Revision History  
NX8350TS Data Sheet  
Description  
Summary  
Rev.  
1.00  
Date  
Page  
Sep 19, 2010  
First edition issued  
All trademarks and registered trademarks are the property of their respective owners.  
C - 1  

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