UPG110P [CEL]
Wide Band Low Power Amplifier, 2000MHz Min, 8000MHz Max, HERMETICALLY SEALED, CHIP-8;
| 型号： | UPG110P |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | Wide Band Low Power Amplifier, 2000MHz Min, 8000MHz Max, HERMETICALLY SEALED, CHIP-8 射频 微波 |
| 文件： | 总3页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UPG110B
UPG110P
2-8 GHz WIDE-BAND AMPLIFIER
GAIN vs. FREQUENCY AND TEMPERATURE
FEATURES
• WIDE-BAND: 2 to 8 GHz
20
15
• HIGH GAIN: 15 dB at f = 2 to 8 GHz
T = -25˚C
• MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz
• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω
T = +25˚C
T = +75˚C
10
5
• HERMETICALLY SEALED PACKAGE ASSURES HIGH
RELIABILITY
0
-5
-10
DESCRIPTION
0
2
4
6
8
10
Frequency, f (GHz)
The UPG110B is a GaAs monolithic integrated circuit de-
signed for use as a wide-band amplifier from 2 GHz to 8 GHz.
The device is most suitable for the gain stage of microwave
communication systems where high gain characteristics are
required. The UPG110 is available in a 4 pin flat package and
in chip form.
ELECTRICAL CHARACTERISTICS1 (TA = 25 ± 3°C, ZS = ZL = 50 Ω, VDD = +8 V, f = 2.0 to 8.0 GHz)
PART NUMBER
PACKAGE OUTLINE
UPG110B/P
FA/CHIP
SYMBOLS
IDD
PARAMETERS
UNITS
mA
dB
MIN
65
TYP
135
15
MAX
Supply Current
Power Gain
180
GP
12
∆GL
Gain Flatness
Input Return Loss
Output Return Loss
Isolation
dB
±1.5
RLIN
RLOUT
ISOL
dB
6
7
10
10
40
14
25
dB
dB
30
10
P1dB
IP3
Output Power at 1 dB Compression Point
SSB Third Order Intercept Point
dBm
dBm
Note:
1. When handling the device, a ground strap should be used to prevent electric static discharge (ESD) that can damage the IC.
California Eastern Laboratories
UPG110B, UPG110P
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
EQUIVALENT CIRCUIT
SYMBOLS
PARAMETERS
UNITS
RATINGS
VDD
DrainVoltage
V
+10
V
DD
VIN
InputVoltage
V
-5 to +0.6
+10
R
1
PIN
InputPower
dBm
W
RF2
CRF
R
L1
R
L2
R2
PT
TotalPowerDissipation
CaseTemperature
StorageTemperature
1.5
LL3
TC
°C
-65 to +125
-65 to +175
LL1
L
L2
RF1
L3
L
2
TSTG
°C
OUT
LIN
C3
C2
IN
L1
C1
Note:
1. Operation in excess of any one of these parameters may result in
permanentdamage.
R
G3
R
G1
RG2
C4
CS
RS1
LG1
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INPUT/OUTPUT RETURN LOSS vs.
FREQUENCY
OUTPUT POWER vs. INPUT POWER
AND FREQUENCY
20
0
RLIN
-10
10
0
-20
RLOUT
-30
f = 2 GHz
f = 5 GHz
f = 8 GHz
0
1
2
3
4
5
6
7
8
9
10
-20
-10
0
10
Input Power, PIN (dBm)
Frequency, f (GHz)
OUTPUT POWER vs. INPUT POWER
AND GAIN CONTROL
ISOLATION vs. FREQUENCY
0
-20
-40
20
10
0
-60
-80
0 dB
-3.1 dB
VG
VG
VG
VG
VG
= 0 V IDD = 130 mA
-5.3 dB
-7.9 dB
= -0.3 V IDD = 110 mA
= -0.5 V IDD = 99 mA
= -0.7 V IDD = 91 mA
= -0.9 V
IDD = 83 mA
-11.7 dB
-10
-10
10
0
0
1
2
3
4
5
6
7
8
9
10
Frequency, f (GHz)
Input Power, PIN (dBm)
Note: Gain control can be achieved by applying
a negative voltage (VG) to the input pin.
UPG110B, UPG110P
TYPICAL SCATTERING PARAMETERS
UPG110B
VDD = 8V, IDD = 135 mA
FREQUENCY
GHZ
S11
S21
S12
S22
K
S21
dB
MAG ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.05
0.10
0.20
0.40
0.60
0.80
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
0.375
-78
1.075
2.899
4.321
5.421
5.860
6.068
5.176
4.863
4.579
4.179
3.879
3.749
3.845
3.946
4.104
4.233
4.354
3.848
3.553
3.334
3.290
3.530
3.178
1.665
0.871
14
-50
-123
-177
151
119
92
0.001 -171
0.967
0.862
0.648
0.384
0.224
0.182
0.338
0.103
0.074
0.161
0.189
0.180
0.177
0.207
0.282
0.364
0.357
0.294
0.251
0.222
0.216
0.175
0.269
0.512
0.558
-26
-51
-85
25.7
41.6
65.8
38.9
26.7
13.3
10.7
16.7
17.2
15.1
13.6
11.9
10.2
8.2
6.7
5.7
6.0
6.7
6.7
5.8
4.5
3.4
0.6
9.2
0.249 -101
0.146 -134
0.103 -164
0.074 -178
0.047
0.013
0.131
0.230
0.310 -113
0.361 -132
0.415 -150
0.437 -173
0.433
0.385
0.321
0.298
0.382
0.475
0.548
0.554
0.460
0.585
0.771
0.769
0.001
0.001
0.002
0.003
0.006
0.008
0.006
0.006
0.007
0.008
0.009
0.010
0.012
143
133
97
88
64
12.7
14.7
15.4
15.7
14.3
13.7
13.2
12.4
11.8
11.5
11.7
11.9
12.3
12.5
12.8
11.7
11.0
10.5
10.3
11.0
10.0
4.4
-132
-157
-126
-152
127
-96
-120
-137
-144
-142
-136
-141
-160
167
143
104
51
171
125
-68
-91
38
0
53
5
-16
-31
-45
-60
-74
-89
-40
-81
-120
-159
158
114
67
165
129
87
40
-4
-36
-57
-73
-76
-57
-71
-82
0.014 -110
0.016 -134
0.015 -164
0.015 -171
14
-35
-80
-125
-173
132
70
0.015
0.017
0.022
0.032
0.047
0.057
0.086
177
164
153
141
116
83
-1
-21
9
-23
2.2
2.0
2.3
9
-28
53
-50
-1.2
OUTLINE DIMENSIONS (Units in mm)
UPG110P (CHIP)
UPG110B
PACKAGE OUTLINE FA
VDD
39 pF
LESS THAN 300 µm
4.5 MAX
200 to 500 µm
50 to 100 µm
LEAD 1 & 3
0.6 ± 0.06
GND
5
VDD
3
1.1 mm
500 to
1000 µm
200 to
500 µm
2
IN
4.6 MAX
4
OUT
4.1 MIN
4.1 MIN
+0.2
2
3
4
1
1
GND
GND GND
GND
LEAD 2 & 4
0.4 ± 0.06
LESS THAN 200 µm
0.7
-0.1
1.3 mm
1.48 MAX
Bonding Pad Size: 200 µm x 200 µm
RECOMMENDED CHIP ASSEMBLY CONDITIONS
0.1 ± 0.06
1. VDD
2. In
3. Non Connection
4. Out
DIE ATTACHMENT
Atmosphere:
Temperature:
N2 gas
320± 5°C
AuSn Preform: UPG100P, 101P, 103P 0.5 x 0.5 x 0.05 (mm), 1 pc
UPG102P 1.2 x 1.2 x 0.05(mm), 1 pc
Case: GND
*The hard solder such as AuSi or AuGe which has
higher melting point than AuSn should not be used.
Base Material: CuW, Cu, KV (Other material should not be used)
Epoxy Die Attach is not recommended.
BONDING
Machine:
Wire:
Temperature:
Strength:
Atmosphere:
TCB (USB is not recommended)
30 µm diameter Au wire
260 ± 10°C
44 ± 5g
N2 gas
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
11/97
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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