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元器件品牌
NESG204619
[CEL]
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION; NPN硅锗晶体管，低噪声，高增益放大
元器件型号：
NESG204619
生产厂家：
CALIFORNIA EASTERN LABS
描述和应用：
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NPN硅锗晶体管，低噪声，高增益放大
晶体 晶体管
PDF文件：
总4页 (文件大小：317K)
下载文档：
下载PDF数据表文档文件
型号参数：NESG204619参数
查看货源
NESG204619-A
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
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24
NEC
NESG204619-A
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
Warning
: Undefined variable $rtag in
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24
CEL
NESG204619-A-FB
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, 19, SUPER MINIMOLD PACKAGE-3
Warning
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156
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0
NEC
NESG204619FB
暂无描述
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0
NEC
NESG204619FB-A
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
NEC
NESG204619FB-A
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
NEC
NESG204619FB-T1
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
NEC
NESG204619FB-T1-A
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
NEC
NESG204619-T1
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
NEC
NESG204619-T1-A
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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19
CEL
NESG204619-T1-A
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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8
NEC
NESG204619-T1-AFB
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, 19, SUPER MINIMOLD PACKAGE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
NEC
NESG204619-T1-AFB
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, 19, SUPER MINIMOLD PACKAGE-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
NEC
NESG2046M33
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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19
CEL
NESG2046M33
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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13
NEC
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