1N5420LEADFREE [CENTRAL]

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, GPR-3A, 2 PIN;
1N5420LEADFREE
元器件型号: 1N5420LEADFREE
生产厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述和应用:

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, GPR-3A, 2 PIN

整流二极管快速恢复二极管
PDF文件: 总2页 (文件大小:282K)
下载文档:  下载PDF数据表文档文件
型号参数:1N5420LEADFREE参数
是否无铅不含铅
是否Rohs认证符合
生命周期Active
IHS 制造商CENTRAL SEMICONDUCTOR CORP
包装说明HERMETIC SEALED, GPR-3A, 2 PIN
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8541.10.00.80
风险等级5.14
Is SamacsysN
其他特性HIGH RELIABILITY
应用FAST RECOVERY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码E-LALF-W2
JESD-609代码e3
最大非重复峰值正向电流80 A
元件数量1
相数1
端子数量2
最大输出电流3 A
封装主体材料GLASS
封装形状ELLIPTICAL
封装形式LONG FORM
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压600 V
最大反向恢复时间0.4 µs
表面贴装NO
端子面层MATTE TIN (315)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间10
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
1N5419
1N5420
FAST RECOVERY GLASS
PASSIVATED SILICON RECTIFIER
3 AMP, 500 AND 600 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5419 and
1N5420 are Silicon Rectifiers mounted in a hermetically
sealed, glass passivated package, designed for general
purpose applications where fast reverse recovery times
and high reliability are required.
MARKING: FULL PART NUMBER
GPR-4AM CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Average Forward Current (TA=55°C)
IO
Peak Forward Surge Current, tp=8.3ms
Operating and Storage Junction Temperature
IFSM
TJ, Tstg
1N5419
500
500
350
3.0
1N5420
600
600
420
UNITS
V
V
V
A
A
°C
80
-65 to +200
UNITS
µA
µA
mA
V
V
V
V
110
100
250
400
pF
pF
ns
ns
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
VR=Rated VRRM
1.0
IR
VR=Rated VRRM, TA=100°C
20
IR
VF
VF
BVR
BVR
CJ
CJ
trr
trr
VR=Rated VRRM, TA=175°C
IF=3.0A
IF=9.0A
IR=50µA (1N5419)
IR=50µA (1N5420)
VR=12V, f=1.0MHz (1N5419)
VR=12V, f=1.0MHz (1N5420)
IF=0.5A, IR=1.0A,
IF=0.5A, IR=1.0A,
Irr=0.25A (1N5419)
Irr=0.25A (1N5420)
550
660
2.0
1.1
1.5
R2 (11-April 2011)
1N5419
1N5420
FAST RECOVERY GLASS
PASSIVATED SILICON RECTIFIER
3 AMP, 500 AND 600 VOLTS
GPR-4AM CASE - MECHANICAL OUTLINE
R2 (11-April 2011)
w w w. c e n t r a l s e m i . c o m
相关元器件产品Datasheet PDF文档

1N5420TR

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon,
0 CENTRAL

1N5420US

HIGH CURRENT AXIAL LEAD/SURFACE MOUNT RECTIFIERS
16 SENSITRON

1N5420US

VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS
45 MICROSEMI

1N5439

VARACTOR TUNING DIODES
61 NJSEMI

1N5440

VARACTOR TUNING DIODES
25 NJSEMI