1N5420LEADFREE [CENTRAL]
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, GPR-3A, 2 PIN;
| 元器件型号： | 1N5420LEADFREE |
| 生产厂家： | 
CENTRAL SEMICONDUCTOR CORP
|
| 描述和应用： | Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, GPR-3A, 2 PIN 整流二极管快速恢复二极管 |
| PDF文件： | 总2页 (文件大小：282K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：1N5420LEADFREE参数 | |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 生命周期 | Active |
| IHS 制造商 | CENTRAL SEMICONDUCTOR CORP |
| 包装说明 | HERMETIC SEALED, GPR-3A, 2 PIN |
| 针数 | 2 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| HTS代码 | 8541.10.00.80 |
| 风险等级 | 5.14 |
| Is Samacsys | N |
| 其他特性 | HIGH RELIABILITY |
| 应用 | FAST RECOVERY |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 二极管元件材料 | SILICON |
| 二极管类型 | RECTIFIER DIODE |
| JESD-30 代码 | E-LALF-W2 |
| JESD-609代码 | e3 |
| 最大非重复峰值正向电流 | 80 A |
| 元件数量 | 1 |
| 相数 | 1 |
| 端子数量 | 2 |
| 最大输出电流 | 3 A |
| 封装主体材料 | GLASS |
| 封装形状 | ELLIPTICAL |
| 封装形式 | LONG FORM |
| 峰值回流温度（摄氏度） | 260 |
| 认证状态 | Not Qualified |
| 最大重复峰值反向电压 | 600 V |
| 最大反向恢复时间 | 0.4 µs |
| 表面贴装 | NO |
| 端子面层 | MATTE TIN (315) |
| 端子形式 | WIRE |
| 端子位置 | AXIAL |
| 处于峰值回流温度下的最长时间 | 10 |
| Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
1N5419
1N5420
FAST RECOVERY GLASS
PASSIVATED SILICON RECTIFIER
3 AMP, 500 AND 600 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5419 and
1N5420 are Silicon Rectifiers mounted in a hermetically
sealed, glass passivated package, designed for general
purpose applications where fast reverse recovery times
and high reliability are required.
MARKING: FULL PART NUMBER
GPR-4AM CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Average Forward Current (TA=55°C)
IO
Peak Forward Surge Current, tp=8.3ms
Operating and Storage Junction Temperature
IFSM
TJ, Tstg
1N5419
500
500
350
3.0
1N5420
600
600
420
UNITS
V
V
V
A
A
°C
80
-65 to +200
UNITS
µA
µA
mA
V
V
V
V
110
100
250
400
pF
pF
ns
ns
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
VR=Rated VRRM
1.0
IR
VR=Rated VRRM, TA=100°C
20
IR
VF
VF
BVR
BVR
CJ
CJ
trr
trr
VR=Rated VRRM, TA=175°C
IF=3.0A
IF=9.0A
IR=50µA (1N5419)
IR=50µA (1N5420)
VR=12V, f=1.0MHz (1N5419)
VR=12V, f=1.0MHz (1N5420)
IF=0.5A, IR=1.0A,
IF=0.5A, IR=1.0A,
Irr=0.25A (1N5419)
Irr=0.25A (1N5420)
550
660
2.0
1.1
1.5
R2 (11-April 2011)
1N5419
1N5420
FAST RECOVERY GLASS
PASSIVATED SILICON RECTIFIER
3 AMP, 500 AND 600 VOLTS
GPR-4AM CASE - MECHANICAL OUTLINE
R2 (11-April 2011)
w w w. c e n t r a l s e m i . c o m
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