首页 > 1N5420US

1N5420US

更新时间：2025-07-09 06:33:29
品牌：MICROSEMI
描述：VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS

PDF下载

中文翻译

免费 PCB/SMT

1N5420US 概述

VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS 无空隙气密式表面安装快恢复整流二极管玻璃 功率二极管

1N5420US 数据手册

通过下载1N5420US数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
1N5415US thru 1N5420US  
VOIDLESS-HERMETICALLY SEALED  
SURFACE MOUNT FAST RECOVERY  
GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411  
and is ideal for high-reliability applications where a failure cannot be tolerated.  
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse  
voltages from 50 to 600 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
also available in axial-leaded packages for thru-hole mounting by deleting the “US”  
suffix (see separate data sheet for 1N5415 thru 1N5420). Microsemi also offers  
numerous other rectifier products to meet higher and lower current ratings with  
various recovery time speed requirements including fast and ultrafast device types  
in both through-hole and surface mount packages.  
Package “E”  
or D-5B  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount package series equivalent to the  
•
Fast recovery 3 Amp rectifiers 50 to 600 V  
JEDEC registered 1N5415 to 1N5420 series  
•
•
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
•
•
•
•
•
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 50 to 600 Volts.  
•
•
•
High forward surge current capability  
Extremely robust construction  
Low thermal resistance  
JAN, JANTX, JANTXV, and JANS available per MIL-  
•
Controlled avalanche with peak reverse power  
PRF-19500/411  
capability  
•
Axial-leaded equivalents also available (see separate  
data sheet for 1N5415 thru 1N5420)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
•
Junction Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass with  
Storage Temperature: -65oC to +175oC  
Tungsten slugs  
Thermal Resistance: 10oC/W junction to endcap  
TERMINALS: End caps are solid Silver with  
Tin/Lead (Sn/Pb) finish  
MARKING: Cathode band only  
POLARITY: Cathode indicated by band  
TAPE & REEL option: Standard per EIA-481-B  
WEIGHT: 539 mg  
Thermal Impedance: 1.5oC/W @ 10 ms heating time  
•
•
•
•
•
Average Rectified Forward Current (IO): 3 Amps @  
TA = 55ºC and 2 Amps @ TA = 100ºC (see Note 1)  
•
•
Forward Surge Current (8.3 ms half sine): 80 Amps  
Solder temperatures: 260oC for 10 s (maximum)  
See package dimensions and recommended pad  
layout on last page  
ELECTRICAL CHARACTERISTICS  
MINIMUM  
BREAKDOWN  
VOLTAGE  
FORWARD  
VOLTAGE  
VF @ 9 A  
MAXIMUM  
REVERSE  
CURRENT  
IR @ VRWM  
MAXIMUM  
REVERSE  
RECOVERY  
AVERAGE  
RECTIFIED  
CURRENT IO  
(NOTE 1)  
TYPE  
VRWM  
VBR @ 50µA  
TIME t  
rr  
MIN.  
MAX.  
25oC  
100oC  
µA  
55oC  
100oC  
AMPS  
(NOTE 2)  
ns  
VOLTS  
VOLTS  
VOLTS  
µA  
AMPS  
1N5415US  
1N5416US  
1N5417US  
1N5418US  
1N5419US  
1N5420US  
50V  
55V  
0.6  
0.6  
0.6  
0.6  
0.6  
0.6  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
20  
20  
20  
20  
20  
20  
150  
3.0  
3.0  
3.0  
3.0  
3.0  
3.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
100V  
200V  
400V  
500V  
600V  
110V  
220V  
440V  
550V  
660V  
150  
150  
150  
250  
400  
NOTE 1: From 3.0 Amps at TA = 55oC, derate linearly at 22 mA/ oC to 2.0 Amps at TA = 100oC. Above TA = 100oC, derate  
linearly to zero at TA = 175 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to  
ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.  
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A  
Copyright 2004  
11-22-2004 REV A  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N5415US thru 1N5420US  
VOIDLESS-HERMETICALLY SEALED  
SURFACE MOUNT FAST RECOVERY  
GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
SYMBOLS & DEFINITIONS  
Symbol  
Definition  
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.  
VBR  
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating  
VRWM  
temperature range excluding all transient voltages (ref JESD282-B).  
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-  
wave input and a 180 degree conduction angle.  
IO  
VF  
IR  
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.  
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and  
temperature.  
Reverse Recovery Time: The time interval between the instant the current passes through zero when  
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse  
current occurs.  
trr  
GRAPHS  
FIGURE 1 – Typical Reverse Current vs. PIV  
FIGURE 2 – Typical Forward Current vs.  
Forward Voltage  
Copyright 2004  
11-22-2004 REV A  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N5415US thru 1N5420US  
VOIDLESS-HERMETICALLY SEALED  
SURFACE MOUNT FAST RECOVERY  
GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
PACKAGE DIMENSIONS AND LAYOUT  
NOTE: This Package Outline has also previously  
been identified as “D-5B”  
PAD LAYOUT  
INCHES  
0.288  
0.070  
mm  
7.32  
1.78  
INCHES  
mm  
A
B
C
MIN  
MAX  
.225  
.142  
MIN  
5.21  
3.48  
MAX  
5.72  
3.61  
BL  
BD  
ECT  
S
.205  
.137  
.019  
.003  
0.155  
3.94  
Note: If mounting requires adhesive  
separate from the solder, an additional  
0.080 inch diameter contact may be  
placed in the center between the pads  
as an optional spot for cement.  
.028  
---  
0.48  
0.08  
0.711  
---  
Copyright 2004  
Microsemi  
Page 3  
11-22-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

1N5420US 替代型号

型号 制造商 描述 替代类型 文档
JANTX1N5420US MICROSEMI Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, GLASS PACKAGE-2 完全替代
JANTXV1N5420US MICROSEMI DIODE 3 A, SILICON, RECTIFIER DIODE, GLASS PACKAGE-2, Rectifier Diode 完全替代

1N5420US 相关器件

型号 制造商 描述 价格 文档
1N5420V SENSITRON Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, 获取价格
1N5420X MICROSEMI Rectifier Diode, 1 Phase, 1 Element, Silicon, 获取价格
1N5439 NJSEMI VARACTOR TUNING DIODES 获取价格
1N5439 ONSEMI DIODE VARACTOR DIODE,SINGLE,3.3PF C(T),DO-7, Variable Capacitance Diode 获取价格
1N5439ACO AEROFLEX Variable Capacitance Diode, 3.3pF C(T), 30V, Silicon, DIE-1 获取价格
1N5439B AEROFLEX Variable Capacitance Diode, 3.3pF C(T), 30V, Silicon, DO-7, 2 PIN 获取价格
1N5439BCO AEROFLEX Variable Capacitance Diode, 3.3pF C(T), 30V, Silicon, DIE-1 获取价格
1N5440 NJSEMI VARACTOR TUNING DIODES 获取价格
1N5440 ONSEMI DIODE VARACTOR DIODE,SINGLE,4.7PF C(T),DO-7, Variable Capacitance Diode 获取价格
1N5440A NJSEMI D0-7 Diode 获取价格

1N5420US 相关文章

  • 小米 AI 眼镜技术亮点：双芯架构助力智能穿戴跨越发展
    2025-07-11
    21
  • AI 芯片风云：台积电能否超越英伟达成新霸主？
    2025-07-11
    20
  • 锁存型霍尔 IC：原理、应用大揭秘
    2025-07-11
    20
  • HBM 角逐：定制化、混合键合等技术成竞争关键
    2025-07-11
    17

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 数据手册
  • 替代型号
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286