1N5420US [MICROSEMI]
VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS; 无空隙气密式表面安装快恢复整流二极管玻璃
| 元器件型号： | 1N5420US |
| 生产厂家： | 
MICROSEMI CORPORATION
|
| 描述和应用： | VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS |
| PDF文件： | 总3页 (文件大小：325K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：1N5420US参数 | |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 生命周期 | Active |
| IHS 制造商 | SENSITRON SEMICONDUCTOR |
| 零件包装代码 | MELF |
| 包装说明 | HERMETIC SEALED, D-5, MELF-2 |
| 针数 | 2 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| HTS代码 | 8541.10.00.80 |
| 风险等级 | 5.21 |
| 其他特性 | METALLURGICALLY BONDED |
| 应用 | GENERAL PURPOSE |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 二极管元件材料 | SILICON |
| 二极管类型 | RECTIFIER DIODE |
| 最大正向电压 (VF) | 1.5 V |
| JESD-30 代码 | E-LELF-R2 |
| JESD-609代码 | e0 |
| 湿度敏感等级 | 1 |
| 最大非重复峰值正向电流 | 80 A |
| 元件数量 | 1 |
| 相数 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 175 °C |
| 最低工作温度 | -65 °C |
| 最大输出电流 | 3 A |
| 封装主体材料 | GLASS |
| 封装形状 | ELLIPTICAL |
| 封装形式 | LONG FORM |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 最大重复峰值反向电压 | 600 V |
| 最大反向电流 | 1 µA |
| 最大反向恢复时间 | 0.4 µs |
| 子类别 | Rectifier Diodes |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | WRAP AROUND |
| 端子位置 | END |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
1N5415US thru 1N5420US
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 600 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded packages for thru-hole mounting by deleting the “US”
suffix (see separate data sheet for 1N5415 thru 1N5420). Microsemi also offers
numerous other rectifier products to meet higher and lower current ratings with
various recovery time speed requirements including fast and ultrafast device types
in both through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “E”
or D-5B
FEATURES
•
•
•
•
•
•
•
Surface mount package series equivalent to the
JEDEC registered 1N5415 to 1N5420 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category
I”
Metallurgical bonds
Working Peak Reverse Voltage 50 to 600 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/411
Axial-leaded equivalents also available (see separate
data sheet for 1N5415 thru 1N5420)
•
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Fast recovery 3 Amp rectifiers 50 to 600 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
•
•
•
•
•
•
•
Junction Temperature: -65
o
C to +175
o
C
Storage Temperature: -65
o
C to +175
o
C
Thermal Resistance: 10
o
C/W junction to endcap
Thermal Impedance: 1.5
o
C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 3 Amps @
T
A
= 55ºC and 2 Amps @ T
A
= 100ºC (see Note 1)
Forward Surge Current (8.3 ms half sine): 80 Amps
Solder temperatures: 260
o
C for 10 s (maximum)
•
•
•
•
•
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINALS: End caps are solid Silver with
Tin/Lead (Sn/Pb) finish
MARKING: Cathode band only
POLARITY: Cathode indicated by band
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 539 mg
See package dimensions and recommended pad
layout on last page
MAXIMUM
REVERSE
CURRENT
I
R
@ V
RWM
o
o
100 C
25 C
µA
µA
1.0
20
1.0
20
1.0
20
1.0
20
1.0
20
1.0
20
MAXIMUM
REVERSE
RECOVERY
TIME t
rr
(NOTE 2)
ns
150
150
150
150
250
400
AVERAGE
RECTIFIED
CURRENT I
O
(NOTE 1)
o
o
100 C
55 C
AMPS
AMPS
3.0
2.0
3.0
2.0
3.0
2.0
3.0
2.0
3.0
2.0
3.0
2.0
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ 50µA
VOLTS
1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
50V
100V
200V
400V
500V
600V
55V
110V
220V
440V
550V
660V
FORWARD
VOLTAGE
V
F
@ 9 A
MIN.
VOLTS
0.6
0.6
0.6
0.6
0.6
0.6
MAX.
VOLTS
1.5
1.5
1.5
1.5
1.5
1.5
1N5415 thru 1N5420
TYPE
V
RWM
o
o
o
o
NOTE 1:
From 3.0 Amps at T
A
= 55 C, derate linearly at 22 mA/ C to 2.0 Amps at T
A
= 100 C. Above T
A
= 100 C, derate
linearly to zero at T
A
= 175
o
C. These ambient ratings are for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T
J(max)
does not exceed 175
o
C.
NOTE 2:
I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= 0.250A
Copyright
2004
11-22-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5415US thru 1N5420US
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
SCOTTSDALE DIVISION
Symbol
V
BR
V
RWM
I
O
V
F
I
R
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range excluding all transient voltages (ref JESD282-B).
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-
wave input and a 180 degree conduction angle.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
WWW .
Microsemi
.C
OM
GRAPHS
FIGURE 1
– Typical Reverse Current vs. PIV
FIGURE 2
– Typical Forward Current vs.
Forward Voltage
1N5415 thru 1N5420
Copyright
2004
11-22-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N5415US thru 1N5420US
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
SCOTTSDALE DIVISION
PACKAGE DIMENSIONS AND LAYOUT
WWW .
Microsemi
.C
OM
NOTE: This Package Outline has also previously
been identified as “D-5B”
INCHES
MIN
BL
BD
ECT
S
.205
.137
.019
.003
MAX
.225
.142
.028
---
MIN
5.21
3.48
0.48
0.08
mm
MAX
5.72
3.61
0.711
---
A
B
C
PAD LAYOUT
INCHES
0.288
0.070
0.155
mm
7.32
1.78
3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
1N5415 thru 1N5420
Copyright
2004
11-22-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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