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2N6551 [CENTRAL]

Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier; 由epitaial平面工艺设计的通用音频放大器制造的互补硅晶体管

2N6551


元器件型号：	2N6551
生产厂家：	CENTRAL SEMICONDUCTOR CORP
描述和应用：	Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier 由epitaial平面工艺设计的通用音频放大器制造的互补硅晶体管晶体音频放大器晶体管功率双极晶体管局域网
PDF文件：	总2页 (文件大小：95K)
下载文档：	下载PDF数据表文档文件
型号参数：2N6551参数

2N6551N

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-202VAR

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11 ETC

2N6551PBFREE

Power Bipolar Transistor,

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0 CENTRAL

2N6551TIN/LEAD

Power Bipolar Transistor,

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0 CENTRAL

2N6552

Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier

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16 CENTRAL

2N6552

Power Transistors

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16 CENTRAL

2N6552

NPN SILICON AMPLIFIER TRANSISTORS

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8 NJSEMI

2N6552LEADFREE

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin,

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0 CENTRAL

2N6552N

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-202VAR

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7 ETC

2N6553

Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier

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33 CENTRAL

2N6553

Power Transistors

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47 CENTRAL

2N6553

NPN SILICON AMPLIFIER TRANSISTORS

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18 NJSEMI

2N6553

1A, 100V, NPN, Si, POWER TRANSISTOR, TO-202

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4 TI

2N6553LEADFREE

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin,

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0 CENTRAL

2N6553LEADFREE

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin,

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1 CENTRAL

2N6553N

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-202VAR

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7 ETC

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