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2N6558LEADFREE [CENTRAL]

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin,;

2N6558LEADFREE


元器件型号：	2N6558LEADFREE
生产厂家：	CENTRAL SEMICONDUCTOR CORP
描述和应用：	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin, 局域网放大器晶体管
PDF文件：	总1页 (文件大小：62K)
下载文档：	下载PDF数据表文档文件
型号参数：2N6558LEADFREE参数

2N6558N

TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | TO-202VAR

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6 ETC

2N6559

TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | TO-202AC

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32 ETC

2N6559

NPN SILICON AMPLIFIER TRANSISTORS

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21 NJSEMI

2N6559N

TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | TO-202AC

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8 ETC

2N656

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5

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34 ETC

2N656

NPN SILICON PLANAR TRANSISTOR

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15 NJSEMI

2N656

60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5

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0 TI

2N6560

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

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45 SEME-LAB

2N6560

Power Bipolar Transistor, 10A I(C), 450V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6561

TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 10A I(C) | TO-3

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28 ETC

2N6561

Bipolar NPN Device in a Hermetically sealed TO3

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24 SEME-LAB

2N6561

Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6561E3

Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6561E3

Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6562

TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC

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9 ETC

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