BAW100GTRPBFREE [CENTRAL]
Diode,;
| 型号： | BAW100GTRPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Diode, |
| 文件： | 总2页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAW100
BAW100G
www.centralsemi.com
SURFACE MOUNT
DUAL, ISOLATED HIGH SPEED
SILICON SWITCHING DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAW100 and
BAW100G each consist of two electrically isolated high
speed silicon switching diodes packaged in an epoxy
molded SOT-143 surface mount case. This device is
designed for high speed switching applications.
The BAW100G is Halogen Free by design.
•
MARKING CODES:
BAW100: CJSS
BAW100G: CJSG
SOT-143 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Continuous Reverse Voltage
V
75
85
R
Peak Repetitive Reverse Voltage
Continuous Forward Current
V
V
RRM
I
250
mA
mA
A
F
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0s
Power Dissipation
I
500
FRM
I
I
I
4.0
FSM
FSM
FSM
2.0
A
1.0
A
P
350
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
μA
μA
μA
V
I
I
I
V =25V, T =150°C
30
R
R
R
R
A
V =75V
1.0
50
R
V =75V, T =150°C
R
A
BV
I =100μA
85
R
R
V
V
V
V
I =1.0mA
715
855
1.00
1.25
2.0
mV
mV
V
F
F
F
F
F
I =10mA
F
I =50mA
F
I =150mA
V
F
C
V =0, f=1.0MHz
pF
ns
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0mA
6.0
rr
F
R
L
R4 (20-November 2009)
BAW100
BAW100G
SURFACE MOUNT
DUAL, ISOLATED HIGH SPEED
SILICON SWITCHING DIODES
SOT-143 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) ANODE D1
2) ANODE D2
3) CATHODE D2
4) CATHODE D1
MARKING CODES:
BAW100: CJSS
BAW100G: CJSG
R4 (20-November 2009)
www.centralsemi.com
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