CBAT54TR [CENTRAL]
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, PLASTIC PACKAGE-3;
| 型号： | CBAT54TR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, PLASTIC PACKAGE-3 |
| 文件： | 总2页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CBAT54
Central
CBAT54A
CBAT54C
CBAT54S
Semiconductor Corp.
DESCRIPTION:
SURFACE MOUNT
SILICON SCHOTTKY DIODES
The CENTRAL SEMICONDUCTOR CBAT54
Series types are Silicon Schottky Diodes in an
SOT-23 Surface Mount Package.
SOT-23 CASE
CBAT54:
SINGLE
MARKING CODE: CL4
MARKING CODE: CL42
MARKING CODE: CL43
MARKING CODE: CL44
CBAT54A:
CBAT54C:
CBAT54S:
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=10ms
Power Dissipation
V
30
V
R
F
I
200
300
600
350
mA
mA
mA
mW
I
I
FRM
FSM
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T , T
stg
-65 to +150
357
°C
°C/W
J
Θ
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MAX
UNITS
I
V =25V
2.0
240
320
400
500
800
10
µA
mV
mV
mV
mV
mV
pF
R
R
V
V
V
V
V
I =0.1mA
F
F
F
F
F
F
I =1.0mA
F
I =10mA
F
I =30mA
F
I =100mA
F
C
V =1.0V, f=1.0 MHz
d
R
t
I =I =10mA, I =1.0mA, R =100Ω
rr
5.0
ns
rr
F
R
L
R0 (13-January 2005)
TM
CBAT54
CBAT54A
CBAT54C
CBAT54S
Central
Semiconductor Corp.
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-23 CASE - MECHANICAL OUTLINE
2
1
2
1
2
1
2
1
D1
D2
D1
D2
D1
D2
3
3
3
3
LEAD CODE:
LEAD CODE:
LEAD CODE:
LEAD CODE:
CBAT54
CBAT54A
CBAT54C
CBAT54S
1) Anode
1) Cathode D2
2) Cathode D1
1) Anode D2
2) Anode D1
1) Anode D2
2) Cathode D1
2) No Connection
3) Cathode
3) Anode D1, Anode D2
3) Cathode D1, Cathode D2 3) Anode D1, Cathode D2
MARKING
MARKING
MARKING
MARKING
CODE: CL4
CODE: CL42
CODE: CL43
CODE: CL44
R0 (13-January 2005)
相关型号：
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