CBRLDSH1-40 [CENTRAL]
SURFACE MOUNT LOW PROFILE 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER; 表面安装LOW PROFILE 1 AMP硅肖特基整流桥![CBRLDSH1-40](http://pdffile.icpdf.com/pdf1/p00171/img/icpdf/CBRLD_959939_icpdf.jpg)
型号: | CBRLDSH1-40 |
厂家: | ![]() |
描述: | SURFACE MOUNT LOW PROFILE 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER |
文件: | 总2页 (文件大小:518K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CBRLDSH1-40
SURFACE MOUNT
LOW PROFILE
1 AMP SILICON
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRLDSH1-40
is a full wave Schottky bridge rectifier mounted in a
low profile epoxy surface mount molded case, utilizing
glass passivated chips.
SCHOTTKY BRIDGE RECTIFIER
MARKING CODE: CLP1
LPDIP CASE
APPLICATIONS:
• Solid state lighting (SSL)
FEATURES:
• Low leakage current (16μA TYP @ V
)
RRM
• DC-DC converters
• Low profile case (1.45mm MAX)
• Polarity protection
• Low V Schottky diodes (450mV TYP @ I =1.0A)
F F
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
SYMBOL
UNITS
V
A
V
40
RRM
DC Blocking Voltage
V
40
V
V
R
RMS Reverse Voltage
V
28
R(RMS)
Average Forward Current
I
1.0
30
A
O
Peak Forward Surge Current (tp=8.3ms)
Operating & Storage Junction Temperature
Thermal Resistance
I
A
FSM
T , T
-55 to +150
95
°C
°C/W
J
stg
Θ
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
V =40V
MIN
TYP
16
MAX
100
UNITS
μA
I
R
R
BV
I =0.1mA
40
50
V
R
R
V
I =1.0A
450
110
500
mV
pF
F
F
C
V =4.0V, f=1.0MHz
R
J
R1 (17-January 2012)
CBRLDSH1-40
SURFACE MOUNT
LOW PROFILE
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
LPDIP CASE - MECHANICAL OUTLINE
MARKING CODE: CLP1
R1 (17-January 2012)
www.centralsemi.com
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