CEDM7001EBK [CENTRAL]
Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS PACKAGE-3;型号: | CEDM7001EBK |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS PACKAGE-3 |
文件: | 总2页 (文件大小:355K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CEDM7001
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7001
is an N-Channel Enhancement-mode Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low r
and Low Theshold Voltage.
DS(on)
MARKING CODE: H
FEATURES:
• 100mW Power Dissipation
• 0.4mm Low Package Profile
SOT-883L CASE
• Low r
• Low Threshold Voltage
DS(on)
APPLICATIONS:
• Load/Power Switches
• Logic Level Compatible
• DC/DC Converters
• Battery Powered Portable Equipment
• Small, TLP™ 1x0.6mm, SOT-883L Leadless
Surface Mount Package
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Drain-Source Voltage
V
V
20
10
DS
GS
Gate-Source Voltage
V
Continuous Drain Current (Steady State)
Peak Drain Current (tp=10μs)
Power Dissipation
I
100
mA
mA
mW
°C
D
I
200
DM
P
100
D
Operating and Storage Junction Temperature
T , T
-65 to +150
J
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
μA
μA
μA
V
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=10V, V =0
1.0
1.0
1.0
GSSF
GSSR
DSS
GS
GS
DS
GS
DS
=10V, V =0
DS
=20V, V =0
GS
BV
=0, I =100μA
20
DSS
GS(th)
D
V
=V , I =250μA
0.6
0.9
3.0
4.0
15
V
DS GS
D
r
r
r
=4.0V, I =10mA
Ω
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
DS
DS
DS
DS
DD
DD
D
=2.5V, I =10mA
Ω
D
=1.5V, I =1.0mA
Ω
D
g
=10V, I =100mA
100
mS
pF
pF
pF
ns
ns
fs
D
C
C
C
=3.0V, V =0, f=1.0MHz
4.0
9.0
9.5
50
rss
iss
GS
=3.0V, V =0, f=1.0MHz
GS
=3.0V, V =0, f=1.0MHz
oss
GS
t
t
=3.0V, V =2.5V, I =10mA
GS
on
off
D
=3.0V, V =2.5V, I =10mA
75
GS
D
R6 (5-August 2010)
CEDM7001
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-883L CASE - MECHANICAL OUTLINE
LEAD CODE:
1) GATE
2) SOURCE
3) DRAIN
MARKING CODE: H
R6 (5-August 2010)
www.centralsemi.com
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