CEDM7002AE [CENTRAL]
SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET; 表面贴装硅N沟道增强型MOSFET
| 型号： | CEDM7002AE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET |
| 文件： | 总3页 (文件大小：909K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
www.centralsemi.com
DESCRIPTION:
ENHANCEMENT-MODE
MOSFET
The CENTRAL SEMICONDUCTOR CEDM7002AE
is a special ESD protected version of the 2N7002
enhancement-mode N-Channel MOSFET designed for
high speed pulsed amplifier and driver applications.
MARKING CODE: 7
SOT-883L CASE
FEATURES:
♦
•
ESD protection up to 1800V
APPLICATIONS:
Load/Power switches
DC-DC converter circuits
Power management
• 350mW power dissipation
• Low gate charge
•
•
•
• Low r
DS(ON)
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
SYMBOL
UNITS
V
A
V
60
60
DS
DG
GS
Drain-Gate Voltage
V
V
V
V
Gate-Source Voltage
20
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation
I
300
mA
mA
mW
°C
D
I
800
DM
P
100
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
1250
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
=20V, V =0
10
μA
GSSF GSSR
GS
DS
DS
GS
DS
♦
♦
=60V, V =0
GS
100
500
nA
μA
V
DSS
DSS
=60V, V =0, T =125°C
GS
J
BV
=0, I =10μA
60
1.2
0.5
70
DSS
GS(th)
SD
D
V
V
=V , I =250μA
1.5
2.0
1.1
1.4
1.8
6.0
V
DS GS
D
=0, I =115mA (Note 1)
V
GS
GS
GS
GS
DS
DS
DS
DS
S
♦
r
r
r
=10V, I =500mA (Note 1)
1.0
1.1
3.0
Ω
DS(ON)
DS(ON)
DS(ON)
D
=5.0V, I =100mA (Note 1)
Ω
D
=2.5V, I =10mA (Note 1)
Ω
D
g
=10V, I =200mA
220
mS
pF
pF
pF
FS
D
C
C
C
=25V, V =0, f=1.0MHz
5.0
50
25
rss
iss
GS
=25V, V =0, f=1.0MHz
GS
=25V, V =0, f=1.0MHz
oss
GS
♦ Enhanced specification
Notes: (1) tp=380ꢀs
R1 (3-October 2013)
CEDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
TYP
MAX
UNITS
Q
Q
Q
V
V
V
V
=10V, V =4.5V, I =200mA
0.5
nC
g(tot)
gs
DS
DS
DS
DD
GS
D
=10V, V =4.5V, I =200mA
0.2
nC
nC
ns
GS
D
=10V, V =4.5V, I =200mA
0.14
gd
GS
D
t
t
=30V, V =10V, I =200mA
20
45
on
off
GS
D
R =25Ω, R =150Ω
ns
G
L
SOT-883L CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
(Bottom View)
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 7
R1 (3-October 2013)
www.centralsemi.com
CEDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (3-October 2013)
www.centralsemi.com
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