CMDSH-4EBKPBFREE [CENTRAL]
Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM),;
| 型号： | CMDSH-4EBKPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), |
| 文件： | 总2页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMDSH-4E
ENHANCED SPECIFICATION
www.centralsemi.com
DESCRIPTION:
SURFACE MOUNT
The CENTRAL SEMICONDUCTOR CMDSH-4E is an
Enhanced version of the CMDSH-3 Silicon Schottky
Diode in an SOD-323 Surface Mount Package.
SILICON SCHOTTKY DIODE
ENHANCED SPECIFICATIONS:
♦ I from 100mA max to 200mA max.
O
♦ BV from 30V min to 40V min.
R
♦ V from 1.0V max to 0.8V max.
F
SOD-323 CASE
MARKING CODE: S1E
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
♦Peak Repetitive Reverse Voltage
V
40
200
RRM
♦
Average Forward Current
I
mA
mA
O
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
I
350
FRM
I
750
mA
FSM
P
250
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
500
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
90
MAX
500
UNITS
nA
μA
V
I
V =25V
R
R
I
V =25V, T =100°C
25
100
R
R
A
BV
I =100μA
40
50
♦
R
R
V
I =2.0mA
0.29
0.37
0.61
0.65
7.0
0.33
0.42
0.80
1.0
V
F
F
♦V
♦V
V
I =15mA
F
V
F
F
F
I =100mA
V
F
I =200mA
F
V
♦♦
C
t
V =1.0V, f=1.0MHz
pF
ns
T
R
I =I =10mA, I =1.0mA, R =100Ω
5.0
rr
F
R
rr
L
♦ Enhanced specification.
♦♦ Additional Enhanced specification.
R2 (8-January 2010)
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODE
SOD-323 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) CATHODE
2) ANODE
MARKING CODE: S1E
R2 (8-January 2010)
www.centralsemi.com
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