CMKT2207_10 [CENTRAL]
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS; 表面贴装互补硅晶体管型号: | CMKT2207_10 |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
文件: | 总2页 (文件大小:493K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CMKT2207
www.centralsemi.com
SURFACE MOUNT
COMPLEMENTARY SILICON
TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2207
consists of one 2222A NPN transistor and an
individually isolated complementary 2907A PNP
transistor, manufactured by the epitaxial planar
process and epoxy molded in an SOT-363 surface
mount package. This ULTRAmini™ device has
been designed for small signal general purpose and
switching applications.
MARKING CODE: K70
SOT-363 CASE
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
SYMBOL
NPN (Q1)
PNP (Q2)
UNITS
V
V
A
V
V
V
75
40
6.0
60
60
5.0
CBO
CEO
EBO
V
I
600
350
mA
mW
°C
C
P
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
stg
-65 to +150
357
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN (Q1)
MIN MAX
10
PNP (Q2)
MIN MAX
SYMBOL
TEST CONDITIONS
UNITS
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
I
I
I
I
I
I
I
V
V
V
V
V
V
V
=60V
=50V
=60V, T =125°C
=50V, T =125°C
A
=3.0V
-
-
-
CBO
CBO
CBO
CBO
EBO
CEV
CEV
CBO
CEO
EBO
CB
CB
CB
CB
EB
CE
CE
-
-
-
-
-
-
10
-
10
10
-
-
-
-
0.3
1.0
1.2
2.0
-
-
-
-
-
-
10
-
10
-
-
50
-
-
-
0.4
1.6
1.3
2.6
-
A
=60V, V
=30V, V
=3.0V
=500mV
EB(OFF)
EB(OFF)
-
-
BV
BV
BV
I =10μA
75
40
6.0
-
60
60
5.0
-
-
-
C
I =10mA
C
I =10μA
E
V
V
V
V
I =150mA, I =15mA
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
B
B
B
C
C
C
C
I =500mA, I =50mA
-
C
I =150mA, I =15mA
0.6
-
V
V
C
I =500mA, I =50mA
-
C
h
h
h
h
h
V
=10V, I =0.1mA
=10V, I =1.0mA
=10V, I =10mA
=10V, I =150mA
=1.0V, I =150mA
=10V, I =500mA
35
50
75
100
50
40
300
-
75
100
100
100
-
50
-
200
-
CE
CE
CE
CE
CE
V
V
V
V
-
-
-
-
FE
FE
FE
FE
300
-
-
-
-
300
-
-
-
-
C
h
V
FE
CE
C
C
C
E
f
V
=20V, I =20mA, f=100MHz
=20V, I =50mA, f=100MHz
=10V, I =0, f=1.0MHz
=0.5V, I =0, f=1.0MHz
MHz
MHz
pF
T
CE
f
V
V
T
CE
C
-
-
8.0
25
8.0
-
ob
ib
CB
C
V
-
pF
EB
C
R4 (13-January 2010)
CMKT2207
SURFACE MOUNT
COMPLEMENTARY SILICON
TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25°C)
A
NPN (Q1)
PNP (Q2)
MIN MAX
30
SYMBOL
TEST CONDITIONS
=2.0V, I =0, f=1.0MHz
MIN
-
MAX
-
UNITS
pF
kΩ
C
V
-
ib
ie
ie
re
re
fe
fe
oe
EB
C
h
h
h
h
h
h
h
h
V
=10V, I =1.0mA, f=1.0kHz
=10V, I =10mA, f=1.0kHz
=10V, I =1.0mA, f=1.0kHz
=10V, I =10mA, f=1.0kHz
2.0
0.25
-
-
50
75
5.0
25
-
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CE
C
V
kΩ
CE C
V
x10-4
x10-4
CE C
V
CE C
V
=10V, I =1.0mA, f=1.0kHz
CE
C
V
=10V, I =10mA, f=1.0kHz
CE
C
V
=10V, I =1.0mA, f=1.0kHz
μS
μS
ps
dB
ns
ns
ns
ns
ns
ns
ns
ns
CE
C
V
=10V, I =10mA, f=1.0kHz
oe
rb’C
NF
CE
C
V
=10V, I =20mA, f=31.8MHz
c
CB
E
V
V
=10V, I =100μA, R =1.0kΩ, f=1.0kHz
-
-
-
CE
C
S
C
C
C
t
=30V, V =0.5V, I =150mA, I =15mA
45
10
40
100
-
80
-
30
on
CC
B1
B1
B1
BE
BE
BE
t
V
=30V, V =0.5V, I =150mA, I =15mA
-
-
-
10
25
-
d
CC
t
V
=30V, V =0.5V, I =150mA, I =15mA
r
CC
t
V
=6.0V, I =150mA, I =I =15mA
off
CC
=30V, I =150mA, I =I =15mA
CC
B1 B2
C
t
V
V
-
-
225
-
s
B1 B2
C
C
t
=6.0V, I =150mA, I =I =15mA
s
CC B1 B2
t
V
=30V, I =150mA, I =I =15mA
-
60
-
f
f
CC
B1 B2
C
C
t
V
=6.0V, I =150mA, I =I =15mA
-
CC B1 B2
SOT-363 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: K70
R4 (13-January 2010)
www.centralsemi.com
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