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CMLT2207G [CENTRAL]

SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS; 表面贴装双通道，互补硅晶体管
CMLT2207G
型号： CMLT2207G
厂家： CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述：

SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS
表面贴装双通道，互补硅晶体管

晶体 晶体管
文件： 总2页 (文件大小：578K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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CMLT2207G  
www.centralsemi.com  
SURFACE MOUNT  
DUAL, COMPLEMENTARY  
SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLT2207G  
consists of one isolated 2N2222A NPN transistor and  
one complementary isolated 2N2907A PNP transistor,  
manufactured by the epitaxial planar process and  
epoxy molded in an SOT-563 surface mount package.  
This PICOmini™ device has been designed for  
small signal general purpose amplifier and switching  
applications.  
MARKING CODE: L7G  
SOT-563 CASE  
Device is Halogen Free by design  
•
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
NPN (Q1)  
PNP (Q2)  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
75  
40  
60  
60  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6.0  
5.0  
V
Continuous Collector Current  
Power Dissipation  
I
600  
350  
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
Θ
-65 to +150  
357  
J
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
NPN (Q1)  
PNP (Q2)  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
MIN MAX  
UNITS  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
V
V
V
V
V
I
I
I
I
I
I
I
V
V
V
V
V
V
V
=60V  
=50V  
=60V, T =125°C  
-
-
10  
-
-
-
-
-
10  
-
CBO  
CBO  
CBO  
CBO  
CEV  
CEV  
EBO  
CBO  
CEO  
EBO  
CB  
CB  
CB  
CB  
CE  
CE  
EB  
-
-
10  
-
A
A
=50V, T =125°C  
-
-
10  
-
=60V, V  
=30V, V  
=3.0V  
=3.0V  
=500mV  
-
-
10  
-
EB(OFF)  
EB(OFF)  
-
-
50  
-
-
10  
-
-
BV  
BV  
BV  
I =10μA  
75  
40  
6.0  
-
60  
60  
5.0  
-
-
-
-
-
-
C
I =10mA  
C
I =10μA  
-
E
V
V
V
V
I =150mA, I =15mA  
0.3  
1.0  
1.2  
2.0  
-
0.4  
1.6  
1.3  
2.6  
-
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
B
B
B
C
C
C
C
I =500mA, I =50mA  
-
C
I =150mA, I =15mA  
0.6  
-
35  
50  
75  
V
V
C
I =500mA, I =50mA  
-
C
h
h
h
h
h
V
=10V, I =0.1mA  
=10V, I =1.0mA  
=10V, I =10mA  
=10V, I =150mA  
=1.0V, I =150mA  
=10V, I =500mA  
75  
100  
100  
CE  
CE  
CE  
CE  
CE  
V
V
V
V
-
-
-
-
FE  
FE  
FE  
FE  
100 300  
100 300  
50  
40  
-
-
-
50  
-
-
C
h
V
FE  
CE  
C
R3 (20-January 2010)  
CMLT2207G  
SURFACE MOUNT  
DUAL, COMPLEMENTARY  
SILICON TRANSISTORS  
ELECTRICAL CHARACTERISTICS - Continued:  
NPN (Q1)  
PNP (Q2)  
SYMBOL  
TEST CONDITIONS  
=20V, I =20mA, f=100MHz  
MIN MAX  
MIN MAX  
UNITS  
MHz  
MHz  
pF  
pF  
pF  
kΩ  
kΩ  
x10-4  
x10-4  
f
V
300  
-
-
-
-
-
-
T
CE  
C
f
V
=20V, I =50mA, f=100MHz  
200  
T
CE  
C
C
V
=10V, I =0, f=1.0MHz  
-
-
-
8.0  
25  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.0  
-
30  
-
-
-
-
-
-
-
ob  
CB  
E
C
V
=0.5V, I =0, f=1.0MHz  
ib  
EB  
C
C
V
=2.0V, I =0, f=1.0MHz  
ib  
ie  
ie  
re  
re  
fe  
fe  
oe  
EB  
C
h
h
h
h
h
h
h
h
V
=10V, I =1.0mA, f=1.0kHz  
2.0  
0.25  
-
-
50  
75  
5.0  
25  
-
8.0  
1.25  
8.0  
4.0  
300  
375  
35  
200  
150  
4.0  
-
CE  
C
V
=10V, I =10mA, f=1.0kHz  
CE  
C
V
=10V, I =1.0mA, f=1.0kHz  
CE  
C
V
=10V, I =10mA, f=1.0kHz  
CE  
C
V
=10V, I =1.0mA, f=1.0kHz  
CE  
C
V
=10V, I =10mA, f=1.0kHz  
CE  
C
V
=10V, I =1.0mA, f=1.0kHz  
μS  
μS  
ps  
dB  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
CE  
C
V
=10V, I =10mA, f=1.0kHz  
-
-
-
oe  
rb’C  
CE  
C
V
=10V, I =20mA, f=31.8MHz  
c
CB  
E
NF  
V
=10V, I =100μA, R =1.0kꢀ, f=1.0kHz  
-
-
CE  
C
S
C
C
C
t
V
=30V, V =0.5V, I =150mA, I =15mA  
45  
10  
40  
100  
-
80  
-
30  
on  
CC BE B1  
t
V
=30V, V =0.5V, I =150mA, I =15mA  
=30V, V =0.5V, I =150mA, I =15mA  
-
-
-
10  
25  
-
d
CC BE B1  
t
V
r
CC BE B1  
t
V
=6.0V, I =150mA, I =I =15mA  
off  
CC B1 B2  
C
t
V
=30V, I =150mA, I =I =15mA  
-
-
225  
-
s
CC B1 B2  
C
t
V
=6.0V, I =150mA, I =I =15mA  
s
CC B1 B2  
C
t
V
=30V, I =150mA, I =I =15mA  
-
-
60  
-
f
CC B1 B2  
C
t
V
=6.0V, I =150mA, I =I =15mA  
f
CC B1 B2  
C
SOT-563 CASE - MECHANICAL OUTLINE  
LEAD CODE:  
1) Emitter Q1  
2) Base Q1  
MARKING CODE: L7G  
3) Collector Q2  
4) Emitter Q2  
5) Base Q2  
6) Collector Q1  
R3 (20-January 2010)  
www.centralsemi.com  

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