CMLT3906EGTRPBFREE [CENTRAL]
Transistor,;
| 型号： | CMLT3906EGTRPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：517K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
www.centralsemi.com
ENHANCED SPECIFICATION
SURFACE MOUNT
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are combinations of dual, enhanced specification
transistors in a space saving SOT-563 package,
designed for small signal general purpose amplifier and
switching applications.
COMPLEMENTARY
SILICON TRANSISTORS
MARKING CODES: CMLT3904E:
CMLT3906E:
L04
L06
L46
C4G
C6G
46G
CMLT3946E:
CMLT3904EG*:
CMLT3906EG*:
CMLT3946EG*:
SOT-563 CASE
Device is Halogen Free by design
*
♦ h
from 60 MIN to 70 MIN (NPN/PNP)
ENHANCED SPECIFICATIONS:
FE
♦ V
from 0.3V MAX to 0.2V MAX(NPN)
from 0.4V MAX to 0.2V MAX(PNP)
♦ BV
♦ BV
from 40V MIN to 60V MIN (PNP)
from 5.0V MIN to 6.0V MIN (PNP)
CE(SAT)
CBO
EBO
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
SYMBOL
UNITS
V
A
♦
♦
V
V
V
60
40
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
6.0
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
I
200
mA
mW
mW
mW
°C
C
P
P
P
350
D
D
D
300
150
T , T
-65 to +150
357
J
stg
JA
Θ
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN
PNP
MAX
SYMBOL
TEST CONDITIONS
=30V, V =3.0V
MIN
-
TYP
TYP
UNITS
nA
I
V
-
-
50
CEV
CE
I =10µA
EB
♦
♦
BV
BV
BV
60
40
6.0
-
115
60
90
55
-
V
V
V
V
V
V
V
CBO
CEO
C
I =1.0mA
-
C
I =10µA
7.5
7.9
-
EBO
E
♦
♦
V
V
V
V
I =10mA, I =1.0mA
0.057
0.100
0.75
0.85
240
0.050 0.100
0.100 0.200
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =50mA, I =5.0mA
-
C
B
I =10mA, I =1.0mA
0.65
-
0.75
0.85
130
150
150
120
55
0.85
C
B
I =50mA, I =5.0mA
0.95
C
B
♦ h
♦ h
h
V
=1.0V, I =0.1mA
90
100
100
70
30
-
CE
CE
CE
CE
CE
C
V
V
V
V
=1.0V, I =1.0mA
235
-
FE
C
=1.0V, I =10mA
215
300
FE
C
♦
h
=1.0V, I =50mA
110
-
FE
C
h
=1.0V, I =100mA
50
-
FE
C
♦ Enhanced Specification
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R4 (20-January 2010)
CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25°C)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
MHz
pF
f
V
V
V
V
V
V
V
V
=20V, I =10mA, f=100MHz
300
T
CE
CB
BE
CE
CE
CE
CE
CE
C
C
=5.0V, I =0, f=1.0MHz
4.0
8.0
12
ob
ib
E
C
=0.5V, I =0, f=1.0MHz
pF
C
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
1.0
0.1
100
1.0
kΩ
x10-4
ie
C
=10V, I =1.0mA, f=1.0kHz
C
10
re
fe
=10V, I =1.0mA, f=1.0kHz
400
60
C
=10V, I =1.0mA, f=1.0kHz
μS
oe
C
NF
=5.0V, I =100μA, R =1.0kΩ
C S
f=10Hz to 15.7kHz
4.0
35
dB
ns
ns
ns
ns
t
t
t
t
V
V
V
V
=3.0V, V =0.5V, I =10mA, I =1.0mA
BE B1
d
r
CC
CC
CC
CC
C
=3.0V, V =0.5V, I =10mA, I =1.0mA
35
BE B1
C
=3.0V, I =10mA, I =I =1.0mA
200
50
s
f
C
B1 B2
=3.0V, I =10mA, I =I =1.0mA
C
B1 B2
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
CMLT3904E
CMLT3904EG*
CMLT3906E
CMLT3906EG*
CMLT3946E
CMLT3946EG*
Device is Halogen Free by design
*
R4 (20-January 2010)
www.centralsemi.com
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