CMPD914EBK [CENTRAL]
Rectifier Diode, 1 Element, 0.25A, 120V V(RRM), Silicon, SOT-23, 3 PIN;
| 型号： | CMPD914EBK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, 1 Element, 0.25A, 120V V(RRM), Silicon, SOT-23, 3 PIN |
| 文件： | 总2页 (文件大小：463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPD914E
ENHANCED SPECIFICATION
SURFACE MOUNT
HIGH SPEED
SILICON SWITCHING DIODE
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD914E is
an Enhanced version of the CMPD914 High Speed
Switching Diode in a SOT-23 surface mount package,
designed for high speed applications.
MARKING CODE: C5DE
FEATURED ENHANCED SPECIFICATIONS:
♦ BV from 100V min to 120V min. (150V TYP)
R
SOT-23 CASE
♦ V from 1.0V max to 0.85V max. (0.72V TYP)
F
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Continuous Reverse Voltage
♦Peak Repetitive Reverse Voltage
Continuous Forward Current
V
75
120
R
V
V
RRM
I
250
mA
mA
mA
mA
mA
mW
°C
F
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0s
Power Dissipation
I
250
FRM
I
I
I
4000
2000
1000
350
FSM
FSM
FSM
P
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL TEST CONDITIONS
MIN
120
TYP
MAX
UNITS
nA
μA
V
I
I
V =20V
25
R
R
R
V =75V
R
5.0
BV
I =100µA
R
150
♦
♦
R
V
I =10mA
0.720
0.915
0.850
0.970
2.0
V
F
F
♦♦ VF
I =100mA
V
F
C
V =0, f=1.0MHz
pF
ns
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0 mA
4.0
rr
R
F
L
♦ Enhanced specification.
♦♦ Additional Enhanced specification.
R3 (25-January 2010)
CMPD914E
ENHANCED SPECIFICATION
SURFACE MOUNT
HIGH SPEED
SILICON SWITCHING DIODE
SOT-23 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode
2) No Connection
3) Cathode
MARKING CODE: C5DE
R3 (25-January 2010)
www.centralsemi.com
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