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CMPDM202PH_12 [CENTRAL]

SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET; 表面贴装P沟道增强型硅MOSFET
CMPDM202PH_12
型号： CMPDM202PH_12
厂家： CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述：

SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
表面贴装P沟道增强型硅MOSFET
文件： 总2页 (文件大小：353K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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CMPDM202PH  
SURFACE MOUNT  
P-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFET  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPDM202PH is  
a high current P-channel enhancement-mode silicon  
MOSFET, manufactured by the P-channel DMOS  
process, and is designed for high speed pulsed  
amplifier and driver applications. This MOSFET offers  
high current, low r  
low leakage current.  
, low threshold voltage, and  
DS(ON)  
MARKING CODE: 202C  
SOT-23F CASE  
FEATURES:  
APPLICATIONS:  
Low r  
(0.093Ω MAX @ V =2.5V)  
GS  
•
Load/Power switches  
DS(ON)  
•
•
•
Power supply converter circuits  
Battery powered portable equipment  
High current (I =2.3A)  
Logic level compatibility  
•
•
D
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
SYMBOL  
UNITS  
V
A
V
20  
12  
DS  
Gate-Source Voltage  
V
V
A
GS  
Continuous Drain Current (Steady State)  
Maximum Pulsed Drain Current, tp=10μs  
Power Dissipation  
I
2.3  
D
I
9.2  
A
DM  
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-55 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=12V, V =0  
100  
nA  
GSSF GSSR  
GS  
DS  
GS  
DS  
I
=20V, V =0  
GS  
1.0  
μA  
V
DSS  
BV  
=0, I =250μA  
20  
DSS  
GS(th)  
D
V
=V , I =250μA  
0.6  
1.4  
V
GS DS  
D
r
r
=5.0V, I =1.2A  
0.042  
0.058  
15  
0.088  
0.093  
Ω
DS(ON)  
GS  
GS  
DS  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
D
=2.5V, I =1.2A  
Ω
DS(ON)  
D
g
=5.0V, I =2.3A  
S
FS  
D
C
C
C
=10V, V =0, f=1.0MHz  
85  
pF  
pF  
pF  
nC  
nC  
nC  
ns  
ns  
rss  
iss  
GS  
=10V, V =0, f=1.0MHz  
GS  
800  
75  
=10V, V =0, f=1.0MHz  
oss  
GS  
Q
Q
Q
=10V, V =5.0V, I =2.3A  
GS  
8.0  
1.3  
2.3  
25  
12  
2.0  
3.5  
g(tot)  
gs  
D
=10V, V =5.0V, I =2.3A  
GS  
D
=10V, V =5.0V, I =2.3A  
gd  
GS  
D
t
t
=10V, I =2.3A, R =10Ω  
on  
off  
D G  
=10V, I =2.3A, R =10Ω  
48  
D
G
R1 (11-December 2012)  
CMPDM202PH  
SURFACE MOUNT  
P-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFET  
SOT-23F CASE - MECHANICAL OUTLINE  
2
1
3
PIN CONFIGURATION  
LEAD CODE:  
1) Gate  
2) Source  
3) Drain  
MARKING CODE: 202C  
R1 (11-December 2012)  
www.centralsemi.com  

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