CMPD914E [CENTRAL]
ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE; 增强型规格表面贴装高速硅开关二极管
| 型号： | CMPD914E |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE |
| 文件： | 总2页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMPD914E
Central
ENHANCED SPECIFICATION
Semiconductor Corp.
SURFACE MOUNT
HIGH SPEED
DESCRIPTION:
SILICON SWITCHING DIODE
The Central Semiconductor CMPD914E is an
Enhanced version of the CMPD914 High Speed
Switching Diode in a SOT-23 surface mount
package, designed for high speed applications.
MARKING CODE: C5DE
FEATURED ENHANCED SPECIFICATIONS:
SOT-23 CASE
♦ BV from 100V min to 120V min. (150V TYP)
R
♦ V from 1.0V max to 0.85V max. (0.72V TYP)
F
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
V
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1.0 µs
Forward Surge Current, tp=1.0 ms
Forward Surge Current, tp=1.0 s
Power Dissipation
V
75
R
♦
V
120
250
V
RRM
F
I
mA
mA
mA
mA
mA
mW
I
250
FRM
I
I
I
4000
2000
1000
350
FSM
FSM
FSM
P
D
Operating and Storage
Junction Temperature
T , T
stg
-65 to +150
357
°C
J
Thermal Resistance
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
I =100µA
MIN
120
TYP
150
MAX
UNITS
V
nA
µA
V
V
pF
ns
♦
BV
R
R
I
I
V =20V
25
5.0
R
R
R
V =75V
R
♦ V
I =10mA
0.720
0.915
0.850
0.970
2.0
F
F
T
F
♦♦ V
I =100mA
F
C
V =0V, f=1.0 MHz
R
t
I =I =10mA, R =100Ω, Rec. to 1.0 mA
4.0
rr
R
F
L
♦ Enhanced specification.
♦♦ Additional Enhanced specification.
R2 (6-August 2003)
TM
CMPD914E
Central
ENHANCED SPECIFICATION
Semiconductor Corp.
SURFACE MOUNT
HIGH SPEED
SILICON SWITCHING DIODE
SOT-23 CASE - MECHANICAL OUTLINE
2
1
3
LEAD CODE:
1) ANODE
2) NO CONNECTION
3) CATHODE
MARKING CODE: C5DE
R2 (6-August 2003)
相关型号：
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