CMPT6427BKPBFREE [CENTRAL]
Transistor,;
| 型号： | CMPT6427BKPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPT6427
www.centralsemi.com
SURFACE MOUNT
NPN SILICON
DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6427 type
is a NPN silicon darlington transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for applications requiring
extremely high gain.
MARKING CODE: C1V
SOT-23 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
V
V
V
40
40
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
12
V
Continuous Collector Current
Power Dissipation
I
500
mA
mW
°C
C
P
350
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
stg
Θ
-65 to +150
357
J
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
50
UNITS
nA
μA
nA
V
I
I
I
V
V
V
=30V
=25V
=10V
CBO
CEO
EBO
CB
CE
BE
1.0
50
BV
BV
BV
I =100μA
40
40
12
CBO
CEO
C
I =10mA
V
C
I =10μA
V
EBO
E
V
V
V
V
I =50mA, I =0.5mA
1.20
1.50
2.00
1.75
100K
200K
140K
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
FE
C
B
I =500mA, I =0.5mA
V
C
B
I =500mA, I =0.5mA
V
C
B
V
=5.0V, I =50mA
V
CE
CE
CE
CE
CE
CB
BE
CE
C
h
h
h
V
V
V
V
V
V
V
=5.0V, I =10mA
10K
20K
14K
130
C
=5.0V, I =100mA
FE
C
=5.0V, I =500mA
FE
C
f
=5.0V, I =10mA, f=100MHz
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
7.0
15
ob
E
C
=0.5V, I =0, f=1.0MHz
pF
ib
C
NF
=5.0V, I =1.0mA, R =100kΩ,
C S
f=1.0kHz to 15.7kHz
10
dB
R6 (1-February 2010)
CMPT6427
SURFACE MOUNT
NPN SILICON
DARLINGTON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C1V
R6 (1-February 2010)
www.centralsemi.com
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