CMXD6001TRLEADFREE [CENTRAL]
Diode,;
| 型号： | CMXD6001TRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Diode, 测试 |
| 文件： | 总2页 (文件大小：551K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMXD6001
SURFACE MOUNT
TRIPLE ISOLATED
ULTRA LOW LEAKAGE
SILICON SWITCHING DIODES
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXD6001 type
contains three (3) Isolated Silicon Switching Diodes,
manufactured by the epitaxial planar process, epoxy
™
molded in a SUPERmini surface mount package, and
designed for switching applications requiring extremely
low leakage.
MARKING CODE: X01
SOT-26 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
V
75
100
R
V
V
mA
mA
A
RRM
I
250
F
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
I
250
FRM
I
4.0
FSM
FSM
I
1.0
A
P
350
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
V =75V
MIN
MAX
500
UNITS
pA
I
R
R
BV
I =100μA
100
V
V
R
R
V
V
V
I =1.0mA
0.85
0.95
1.1
F
F
F
F
I =10mA
V
F
I =100mA
V
F
C
V =0, f=1.0MHz
2.0
pF
μs
T
R
t
I =I =10mA, I =1.0mA, R =100Ω
3.0
rr
R
F
rr
L
R4 (9-May 2011)
CMXD6001
SURFACE MOUNT
TRIPLE ISOLATED
ULTRA LOW LEAKAGE
SILICON SWITCHING DIODES
SOT-26 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) Anode D2
3) Anode D3
4) Cathode D3
5) Cathode D2
6) Cathode D1
MARKING CODE: X01
R4 (9-May 2011)
www.centralsemi.com
相关型号：
CMXDM7002ABK
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERMINI PACKAGE-6
CENTRAL
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