CP117-2N6045-WN [CENTRAL]

Transistor;


型号：	CP117-2N6045-WN
厂家：	CENTRAL SEMICONDUCTOR CORP
描述：	Transistor
文件：	总2页 (文件大小：220K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PROCESS CP117

Power Transistor

Central

Semiconductor Corp.

NPN - Darlington Chip

PROCESS DETAILS

Process

EPITAXIAL BASE

111 X 111 MILS

10 MILS

Die Size

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

20 X 30 MILS

20 X 26 MILS

Al - 30,000Å

Au/Cr/Ni/Au - Ni-6,000Å, Au-6,000Å

GEOMETRY

GROSS DIE PER 5 INCH WAFER

910

PRINCIPAL DEVICE TYPES

2N6043

2N6044

2N6045

2N6301

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R6 (1 -August 2002)

PROCESS CP117

Typical Electrical Characteristics

Central

Semiconductor Corp.

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

R6 (1 -August 2002)

www.centralsemi.com

相关型号：

CP117-2N6301-WN

Transistor

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CP117-2N6301-WS

Transistor

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