CP147 [CENTRAL]
Power Transistor NPN - Darlington Chip; 功率晶体管NPN - 达林顿芯片
| 型号： | CP147 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Transistor NPN - Darlington Chip |
| 文件： | 总2页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CP147
Power Transistor
Central
Semiconductor Corp.
NPN - Darlington Chip
PROCESS DETAILS
Process
Die Size
EPITAXIAL BASE
195 X 195 MILS
12 MILS
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
29 X 29 MILS
61 X 35 MILS
Al - 30,000Å
Ti/Ni/Au - Ni-6,000Å; Au-6,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
280
PRINCIPAL DEVICE TYPES
MJ11012
MJ11014
MJ11016
2N6282
2N6283
2N6284
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (1 -August 2002)
TM
PROCESS CP147
Central
Typical Electrical Characteristics
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R3 (1 -August 2002)
www.centralsemi.com
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