CP219 [CENTRAL]
Power Transistor NPN - High Current Transistor Chip; 功率晶体管NPN - 高电流晶体管芯片
| 型号： | CP219 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Transistor NPN - High Current Transistor Chip |
| 文件： | 总2页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CP219
Power Transistor
Central
Semiconductor Corp.
NPN - High Current Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
Die Thickness
82 x 82 MILS
11 MILS
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
13.2 x 19.7 MILS
13.2 x 21.2 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,670
PRINCIPAL DEVICE TYPES
2N5336
2N5337
2N5338
2N5339
2N5427
2N5428
2N5429
2N5430
D44H11
CJD44H11
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (21-September 2003)
TM
PROCESS CP219
Typical Electrical Characteristics
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (21-September 2003)
www.centralsemi.com
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