CP257-MPSA28-WN [CENTRAL]
Transistor;
| 型号： | CP257-MPSA28-WN |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CP257
Central
Small Signal Transistor
Semiconductor Corp.
NPN - High Voltage Darlington Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
20 x 20 MILS
Die Thickness
8.0 MILS
Base Bonding Pad Area
Emitter Bonding Pad Area
4.9 x 4.9 MILS
6.4 x 6.4 MILS
Top Side Metalization
Back Side Metalization
Al - 30,000Å
Au - 16,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
28,250
PRINCIPAL DEVICE TYPES
MPSA28
MPSA29
CMPTA29
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (21-September 2003)
TM
PROCESS CP257
Typical Electrical Characteristics
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R3 (21-September 2003)
www.centralsemi.com
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