CP309_10 [CENTRAL]
Power Transistor NPN - Low Saturation Transistor Chip; 功率晶体管NPN - 低饱和晶体管芯片
| 型号： | CP309_10 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Transistor NPN - Low Saturation Transistor Chip |
| 文件： | 总2页 (文件大小：466K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PROCESS CP309
Power Transistor
NPN - Low Saturation Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
41.3 x 41.3 MILS
9.0 MILS
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
9.4 x 9.2 MILS
12.8 x 10.2 MILS
Al - 30,000Å
Ag - 12,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
6,285
PRINCIPAL DEVICE TYPES
CMPT3090L
CXT3090L
CZT3090L
CMXT3090L
E
B
BACKSIDE COLLECTOR
R1
R4 (22-March 2010)
www.centralsemi.com
PROCESS CP309
Typical Electrical Characteristics
R4 (22-March 2010)
www.centralsemi.com
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