CP608-TIP32C-WN [CENTRAL]
Transistor;型号: | CP608-TIP32C-WN |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Transistor |
文件: | 总2页 (文件大小:472K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PROCESS CP608
Power Transistor
PNP - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
66 x 66 MILS
Die Size
Die Thickness
12.5 1.0 MILS
12 x 24 MILS
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
11 x 14 MILS
Al - 50,000Å
Cr/Ni/Ag - 16,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
2,630
PRINCIPAL DEVICE TYPES
CJD32C
TIP32C
R5 (6-March 2013)
www.centralsemi.com
PROCESS CP608
Typical Electrical Characteristics
R5 (6-March 2013)
www.centralsemi.com
相关型号:
©2020 ICPDF网 联系我们和版权申明