CP611-CJD42C-CG [CENTRAL]
Transistor;型号: | CP611-CJD42C-CG |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Transistor |
文件: | 总2页 (文件大小:222K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TM
PROCESS CP611
Power Transistor
Central
Semiconductor Corp.
PNP - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
Die Size
EPITAXIAL BASE
80 X 99 MILS
12.5 ± 1 MILS
12 X 32 MILS
13 X 46 MILS
Al - 50,000Å
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
Cr/Ni/Ag - 16,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,450
PRINCIPAL DEVICE TYPES
CJD42C
TIP42C
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (21-September 2003)
TM
PROCESS CP611
Typical Electrical Characteristics
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R3 (21-September 2003)
www.centralsemi.com
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