CP630-CJD127-CM [CENTRAL]
Transistor;型号: | CP630-CJD127-CM |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Transistor |
文件: | 总2页 (文件大小:458K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PROCESS CP630
Power Transistor
PNP - Silicon Darlington Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
80 x 80 MILS
8.0 MILS
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
18 x 27 MILS
34 x 34 MILS
Al - 30,000Å
Ti/Pd/Ag - 20,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,445
PRINCIPAL DEVICE TYPES
CZT127
CJD127
R2 (22-March 2010)
www.centralsemi.com
PROCESS CP630
Typical Electrical Characteristics
R2 (22-March 2010)
www.centralsemi.com
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