CPD04-1N648-CM [CENTRAL]
Rectifier Diode,;
| 型号： | CPD04-1N648-CM |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：648K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PROCESS CPD04
General Purpose Rectifier
500 mA Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
GLASS PASSIVATED MESA
25 x 25 MILS
Die Size
Die Thickness
Anode Bonding Pad Area
9.5 MILS
14.5 x 14.5 MILS
Au - 5,000Å
Top Side Metalization
Back Side Metalization
Au - 2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
18,080
PRINCIPAL DEVICE TYPES
1N645 thru 1N649
CBRHD-02 Series
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (24- August 2006)
PROCESS CPD04
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (24- August 2006)
相关型号：
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