CPD05-1N4001-CT [CENTRAL]
Rectifier Diode,;
| 型号： | CPD05-1N4001-CT |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：648K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PROCESS CPD05
General Purpose Rectifier
1 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
GLASS PASSIVATED MESA
50 x 50 MILS
Die Size
Die Thickness
Anode Bonding Pad Area
9.5 MILS
34 x 34 MILS
Top Side Metalization
Back Side Metalization
Au - 5,000Å
Au - 2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
4,520
PRINCIPAL DEVICE TYPES
1N3611 thru 1N3614
1N4001 thru 1N4007
1N4245 thru 1N4249
1N5059 thru 1N5062
1N5391 thru 1N5399
1N5614 thru 1N5622
CMR1-02 Series
CMR1-02M Series
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (24-August 2006)
PROCESS CPD05
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (24-August 2006)
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